The impact of growth parameters on trench defects in InGaN/GaN quantum wells

F. C.P. Massabuau; A. Le Fol; S. K. Pamenter; F. Oehler; M. J. Kappers; C. J. Humphreys; R. A. Oliver

doi:10.1002/pssa.201300485

The impact of growth parameters on trench defects in InGaN/GaN quantum wells

F. C.P. Massabuau^*, A. Le Fol, S. K. Pamenter, F. Oehler, M. J. Kappers, C. J. Humphreys, R. A. Oliver

^*Corresponding author for this work

Physics

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

The impact of the InGaN growth temperature and of the trimethylindium flux on trench defects has been investigated. We show that the density of defects is affected by both conditions but also their morphology and their emission properties. Therefore, the impact of such defect on the performance of quantum well structures can be controlled by adjusting these two growth conditions. Under usual conditions for making blue light emitting diodes, we observe that the enclosed region of the defect emits light at a longer wavelength. Nevertheless, our data also demonstrate that emission at a shorter wavelength is possible under certain growth conditions.

Original language	English
Pages (from-to)	740-743
Number of pages	4
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	211
Issue number	4
DOIs	https://doi.org/10.1002/pssa.201300485
Publication status	Published - 1 Apr 2014

Keywords

atomic force microscopy
cathodoluminescence
defect
nitrides
trimethylindium flux
quantum well structures

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10.1002/pssa.201300485

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title = "The impact of growth parameters on trench defects in InGaN/GaN quantum wells",

abstract = "The impact of the InGaN growth temperature and of the trimethylindium flux on trench defects has been investigated. We show that the density of defects is affected by both conditions but also their morphology and their emission properties. Therefore, the impact of such defect on the performance of quantum well structures can be controlled by adjusting these two growth conditions. Under usual conditions for making blue light emitting diodes, we observe that the enclosed region of the defect emits light at a longer wavelength. Nevertheless, our data also demonstrate that emission at a shorter wavelength is possible under certain growth conditions.",

keywords = "atomic force microscopy, cathodoluminescence, defect, nitrides, trimethylindium flux, quantum well structures",

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T1 - The impact of growth parameters on trench defects in InGaN/GaN quantum wells

AU - Massabuau, F. C.P.

AU - Le Fol, A.

AU - Pamenter, S. K.

AU - Oehler, F.

AU - Kappers, M. J.

AU - Humphreys, C. J.

AU - Oliver, R. A.

PY - 2014/4/1

Y1 - 2014/4/1

N2 - The impact of the InGaN growth temperature and of the trimethylindium flux on trench defects has been investigated. We show that the density of defects is affected by both conditions but also their morphology and their emission properties. Therefore, the impact of such defect on the performance of quantum well structures can be controlled by adjusting these two growth conditions. Under usual conditions for making blue light emitting diodes, we observe that the enclosed region of the defect emits light at a longer wavelength. Nevertheless, our data also demonstrate that emission at a shorter wavelength is possible under certain growth conditions.

AB - The impact of the InGaN growth temperature and of the trimethylindium flux on trench defects has been investigated. We show that the density of defects is affected by both conditions but also their morphology and their emission properties. Therefore, the impact of such defect on the performance of quantum well structures can be controlled by adjusting these two growth conditions. Under usual conditions for making blue light emitting diodes, we observe that the enclosed region of the defect emits light at a longer wavelength. Nevertheless, our data also demonstrate that emission at a shorter wavelength is possible under certain growth conditions.

KW - atomic force microscopy

KW - cathodoluminescence

KW - defect

KW - nitrides

KW - trimethylindium flux

KW - quantum well structures

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DO - 10.1002/pssa.201300485

M3 - Article

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VL - 211

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JO - Physica Status Solidi (A) Applications and Materials Science

JF - Physica Status Solidi (A) Applications and Materials Science

IS - 4

ER -

The impact of growth parameters on trench defects in InGaN/GaN quantum wells

Abstract

Keywords

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