The growth of ZnSe / CdSe and ZnS / CdS strained layer superlattices by MOVPE

P. J. Parbrook, P. J. Wright, B. Cockayne, A. G. Cullis, B. Henderson, K. P. O'Donnell

Research output: Contribution to journalArticle

34 Citations (Scopus)

Abstract

The growth by metalorganic vapour phase epitaxy (MOVPE) of common anion strained layer superlattices (SLSs) based on the systems ZnSe-CdSe and ZnS-CdS, is reported. Such superlattices have good structural and optical properties when grown at a temperature of 300°C. At higher growth temperatures, these properties deteriorate due to cation diffusion between adjacent layers of the structure and eventually, at 500°C, intermixed alloys form.

LanguageEnglish
Pages503-509
Number of pages7
JournalJournal of Crystal Growth
Volume106
Issue number4
DOIs
Publication statusPublished - 1 Dec 1990

Fingerprint

Metallorganic vapor phase epitaxy
Superlattices
vapor phase epitaxy
superlattices
Growth temperature
Anions
Cations
Structural properties
Negative ions
Optical properties
Positive ions
anions
optical properties
cations
temperature
Temperature

Keywords

  • metalorganic vapour phase epitaxy
  • strained layer superlattice
  • optical properties

Cite this

Parbrook, P. J. ; Wright, P. J. ; Cockayne, B. ; Cullis, A. G. ; Henderson, B. ; O'Donnell, K. P. / The growth of ZnSe / CdSe and ZnS / CdS strained layer superlattices by MOVPE. In: Journal of Crystal Growth. 1990 ; Vol. 106, No. 4. pp. 503-509.
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The growth of ZnSe / CdSe and ZnS / CdS strained layer superlattices by MOVPE. / Parbrook, P. J.; Wright, P. J.; Cockayne, B.; Cullis, A. G.; Henderson, B.; O'Donnell, K. P.

In: Journal of Crystal Growth, Vol. 106, No. 4, 01.12.1990, p. 503-509.

Research output: Contribution to journalArticle

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AU - Henderson, B.

AU - O'Donnell, K. P.

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