The growth of ZnSe / CdSe and ZnS / CdS strained layer superlattices by MOVPE

P. J. Parbrook, P. J. Wright, B. Cockayne, A. G. Cullis, B. Henderson, K. P. O'Donnell

Research output: Contribution to journalArticle

35 Citations (Scopus)

Abstract

The growth by metalorganic vapour phase epitaxy (MOVPE) of common anion strained layer superlattices (SLSs) based on the systems ZnSe-CdSe and ZnS-CdS, is reported. Such superlattices have good structural and optical properties when grown at a temperature of 300°C. At higher growth temperatures, these properties deteriorate due to cation diffusion between adjacent layers of the structure and eventually, at 500°C, intermixed alloys form.

Original languageEnglish
Pages (from-to)503-509
Number of pages7
JournalJournal of Crystal Growth
Volume106
Issue number4
DOIs
Publication statusPublished - 1 Dec 1990

Keywords

  • metalorganic vapour phase epitaxy
  • strained layer superlattice
  • optical properties

Fingerprint Dive into the research topics of 'The growth of ZnSe / CdSe and ZnS / CdS strained layer superlattices by MOVPE'. Together they form a unique fingerprint.

  • Cite this