The growth of ZnSe and other wide-bandgap II-VI semiconductors by MOCVD

P. J. Wright, B. Cockayne, P. J. Parbrook, K. P. O'Donnell, B. Henderson

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

ZnSe was first grown by MOCVD some years ago. However, it is only in recent years that the material quality has improved sufficiently for potential devices to be evaluated. This paper discusses the growth by MOCVD of high-purity ZnSe epitaxial layers, wide-bandgap II-VI ternary alloys, multilayers and low-dimensional structures with potential for blue or blue-green light emission. The growth conditions for high-purity ZnSe layers (ND-N A<1015 cm-3), the structure of such layers grown heteroepitaxially on to III-V semiconductor substrates, the influence of the precursors and the resulting luminescence are considered. Important factors such as the growth conditions required for the alloys and multilayers are also discussed, together with pertinent imposed material constraints. Finally, the major residual problems associated with MOCVD growth are identified and possible solutions presented.

LanguageEnglish
PagesA29-A35
Number of pages7
JournalSemiconductor Science and Technology
Volume6
Issue number9 A
DOIs
Publication statusPublished - 1 Sep 1991

Fingerprint

Metallorganic chemical vapor deposition
metalorganic chemical vapor deposition
Energy gap
Multilayers
purity
Ternary alloys
ternary alloys
Light emission
Epitaxial layers
light emission
Luminescence
luminescence
II-VI semiconductors
Substrates

Keywords

  • ZnSe
  • wide band gap semiconductors
  • luminescence

Cite this

Wright, P. J. ; Cockayne, B. ; Parbrook, P. J. ; O'Donnell, K. P. ; Henderson, B. / The growth of ZnSe and other wide-bandgap II-VI semiconductors by MOCVD. In: Semiconductor Science and Technology. 1991 ; Vol. 6, No. 9 A. pp. A29-A35.
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The growth of ZnSe and other wide-bandgap II-VI semiconductors by MOCVD. / Wright, P. J.; Cockayne, B.; Parbrook, P. J.; O'Donnell, K. P.; Henderson, B.

In: Semiconductor Science and Technology, Vol. 6, No. 9 A, 01.09.1991, p. A29-A35.

Research output: Contribution to journalArticle

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AB - ZnSe was first grown by MOCVD some years ago. However, it is only in recent years that the material quality has improved sufficiently for potential devices to be evaluated. This paper discusses the growth by MOCVD of high-purity ZnSe epitaxial layers, wide-bandgap II-VI ternary alloys, multilayers and low-dimensional structures with potential for blue or blue-green light emission. The growth conditions for high-purity ZnSe layers (ND-N A<1015 cm-3), the structure of such layers grown heteroepitaxially on to III-V semiconductor substrates, the influence of the precursors and the resulting luminescence are considered. Important factors such as the growth conditions required for the alloys and multilayers are also discussed, together with pertinent imposed material constraints. Finally, the major residual problems associated with MOCVD growth are identified and possible solutions presented.

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