The evaluation and modeling of the CMP removal rate for polysilicon

Sim Kit Wang, David Lee Butler, Dong Seng Liu, Feng Chen

Research output: Contribution to journalArticle

Abstract

Polysilicon chemical mechanical planarization (CMP) is an area of research, which has largely been ignored until recently. With the development of bipolar complementary metal oxide semiconductor (BiCMOS), polysilicon has become of increasing importance as the preferred material for filling of deep trench. In this paper, study of removal rates of Polysilicon CMP will be discussed. Traditional models for predicting the polishing rate are typically based on Preston's equation. Here we present a new empirical polishing rate (EPR) model, which is statistically evaluated by cross-validation method, which assess the predictive ability of the model. The study also reveals inadequacies of Preston's equation in describing the polysilicon removal rate in the CMP process.

LanguageEnglish
Pages753-760
Number of pages8
JournalInternational Journal of Nanoscience
Volume4
Issue number4
DOIs
Publication statusPublished - 31 Aug 2005

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Mechanical Phenomena
Semiconductors
Chemical mechanical polishing
Polysilicon
Oxides
Metals
evaluation
Polishing
polishing
Research
CMOS

Keywords

  • CMP
  • empirical polishing rate
  • polysilicon

Cite this

Wang, Sim Kit ; Butler, David Lee ; Liu, Dong Seng ; Chen, Feng. / The evaluation and modeling of the CMP removal rate for polysilicon. In: International Journal of Nanoscience. 2005 ; Vol. 4, No. 4. pp. 753-760.
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The evaluation and modeling of the CMP removal rate for polysilicon. / Wang, Sim Kit; Butler, David Lee; Liu, Dong Seng; Chen, Feng.

In: International Journal of Nanoscience, Vol. 4, No. 4, 31.08.2005, p. 753-760.

Research output: Contribution to journalArticle

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