Abstract
Polysilicon chemical mechanical planarization (CMP) is an area of research, which has largely been ignored until recently. With the development of bipolar complementary metal oxide semiconductor (BiCMOS), polysilicon has become of increasing importance as the preferred material for filling of deep trench. In this paper, study of removal rates of Polysilicon CMP will be discussed. Traditional models for predicting the polishing rate are typically based on Preston's equation. Here we present a new empirical polishing rate (EPR) model, which is statistically evaluated by cross-validation method, which assess the predictive ability of the model. The study also reveals inadequacies of Preston's equation in describing the polysilicon removal rate in the CMP process.
| Language | English |
|---|---|
| Pages | 753-760 |
| Number of pages | 8 |
| Journal | International Journal of Nanoscience |
| Volume | 4 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 31 Aug 2005 |
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Keywords
- CMP
- empirical polishing rate
- polysilicon
Cite this
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The evaluation and modeling of the CMP removal rate for polysilicon. / Wang, Sim Kit; Butler, David Lee; Liu, Dong Seng; Chen, Feng.
In: International Journal of Nanoscience, Vol. 4, No. 4, 31.08.2005, p. 753-760.Research output: Contribution to journal › Article
TY - JOUR
T1 - The evaluation and modeling of the CMP removal rate for polysilicon
AU - Wang, Sim Kit
AU - Butler, David Lee
AU - Liu, Dong Seng
AU - Chen, Feng
PY - 2005/8/31
Y1 - 2005/8/31
N2 - Polysilicon chemical mechanical planarization (CMP) is an area of research, which has largely been ignored until recently. With the development of bipolar complementary metal oxide semiconductor (BiCMOS), polysilicon has become of increasing importance as the preferred material for filling of deep trench. In this paper, study of removal rates of Polysilicon CMP will be discussed. Traditional models for predicting the polishing rate are typically based on Preston's equation. Here we present a new empirical polishing rate (EPR) model, which is statistically evaluated by cross-validation method, which assess the predictive ability of the model. The study also reveals inadequacies of Preston's equation in describing the polysilicon removal rate in the CMP process.
AB - Polysilicon chemical mechanical planarization (CMP) is an area of research, which has largely been ignored until recently. With the development of bipolar complementary metal oxide semiconductor (BiCMOS), polysilicon has become of increasing importance as the preferred material for filling of deep trench. In this paper, study of removal rates of Polysilicon CMP will be discussed. Traditional models for predicting the polishing rate are typically based on Preston's equation. Here we present a new empirical polishing rate (EPR) model, which is statistically evaluated by cross-validation method, which assess the predictive ability of the model. The study also reveals inadequacies of Preston's equation in describing the polysilicon removal rate in the CMP process.
KW - CMP
KW - empirical polishing rate
KW - polysilicon
UR - http://www.scopus.com/inward/record.url?scp=28844432103&partnerID=8YFLogxK
UR - http://www.worldscientific.com/worldscinet/ijn
U2 - 10.1142/S0219581X05003498
DO - 10.1142/S0219581X05003498
M3 - Article
VL - 4
SP - 753
EP - 760
JO - International Journal of Nanoscience
T2 - International Journal of Nanoscience
JF - International Journal of Nanoscience
SN - 0219-581X
IS - 4
ER -