The efficient deployment of silicon super-junction MOSFETs as synchronous rectifiers

Philip Anthony; Neville McNeill

doi:10.1049/cp.2014.0331

The efficient deployment of silicon super-junction MOSFETs as synchronous rectifiers

Philip Anthony
, Neville McNeill

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution book

Abstract

Charge-compensated or “Super-junction” MOSFETs exhibit low on-state resistances and low switching losses. However, the reverse recovery behaviour of their intrinsic diodes and their output capacitance characteristics make their deployment as synchronous rectifiers challenging. A simple auxiliary circuit is proposed to address these issues, by reversing the direction of current flow in the MOSFET channel at turn-off, thereby deactivating the intrinsic anti-parallel diode and partially charging the MOSFET output capacitance. The proposed technique is verified on a 400 V, 1 kW buck converter.

Original language	English
Title of host publication	7th IET International Conference on Power Electronics, Machines and Drives (PEMD 2014)
Place of Publication	Piscataway, NJ.
Publisher	IEEE
ISBN (Print)	9781849198141
DOIs	https://doi.org/10.1049/cp.2014.0331
Publication status	Published - 10 Apr 2014
Externally published	Yes
Event	7th IET International Conference on Power Electronics, Machines and Drives, PEMD 2014 - Manchester, United Kingdom Duration: 8 Apr 2014 → 10 Apr 2014

Conference

Conference	7th IET International Conference on Power Electronics, Machines and Drives, PEMD 2014
Abbreviated title	PEMD 2014
Country/Territory	United Kingdom
City	Manchester
Period	8/04/14 → 10/04/14

Keywords

inverter
MOSFET
synchronous rectification

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10.1049/cp.2014.0331

Cite this

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title = "The efficient deployment of silicon super-junction MOSFETs as synchronous rectifiers",

abstract = "Charge-compensated or “Super-junction” MOSFETs exhibit low on-state resistances and low switching losses. However, the reverse recovery behaviour of their intrinsic diodes and their output capacitance characteristics make their deployment as synchronous rectifiers challenging. A simple auxiliary circuit is proposed to address these issues, by reversing the direction of current flow in the MOSFET channel at turn-off, thereby deactivating the intrinsic anti-parallel diode and partially charging the MOSFET output capacitance. The proposed technique is verified on a 400 V, 1 kW buck converter.",

keywords = "inverter, MOSFET, synchronous rectification",

author = "Philip Anthony and Neville McNeill",

year = "2014",

month = apr,

day = "10",

doi = "10.1049/cp.2014.0331",

language = "English",

isbn = "9781849198141",

booktitle = "7th IET International Conference on Power Electronics, Machines and Drives (PEMD 2014)",

publisher = "IEEE",

note = "7th IET International Conference on Power Electronics, Machines and Drives, PEMD 2014, PEMD 2014 ; Conference date: 08-04-2014 Through 10-04-2014",

}

Anthony, P & McNeill, N 2014, The efficient deployment of silicon super-junction MOSFETs as synchronous rectifiers. in 7th IET International Conference on Power Electronics, Machines and Drives (PEMD 2014). IEEE, Piscataway, NJ., 7th IET International Conference on Power Electronics, Machines and Drives, PEMD 2014, Manchester, United Kingdom, 8/04/14. https://doi.org/10.1049/cp.2014.0331

TY - GEN

T1 - The efficient deployment of silicon super-junction MOSFETs as synchronous rectifiers

AU - Anthony, Philip

AU - McNeill, Neville

PY - 2014/4/10

Y1 - 2014/4/10

N2 - Charge-compensated or “Super-junction” MOSFETs exhibit low on-state resistances and low switching losses. However, the reverse recovery behaviour of their intrinsic diodes and their output capacitance characteristics make their deployment as synchronous rectifiers challenging. A simple auxiliary circuit is proposed to address these issues, by reversing the direction of current flow in the MOSFET channel at turn-off, thereby deactivating the intrinsic anti-parallel diode and partially charging the MOSFET output capacitance. The proposed technique is verified on a 400 V, 1 kW buck converter.

AB - Charge-compensated or “Super-junction” MOSFETs exhibit low on-state resistances and low switching losses. However, the reverse recovery behaviour of their intrinsic diodes and their output capacitance characteristics make their deployment as synchronous rectifiers challenging. A simple auxiliary circuit is proposed to address these issues, by reversing the direction of current flow in the MOSFET channel at turn-off, thereby deactivating the intrinsic anti-parallel diode and partially charging the MOSFET output capacitance. The proposed technique is verified on a 400 V, 1 kW buck converter.

KW - inverter

KW - MOSFET

KW - synchronous rectification

UR - http://ieeexplore.ieee.org/document/6836997/

U2 - 10.1049/cp.2014.0331

DO - 10.1049/cp.2014.0331

M3 - Conference contribution book

SN - 9781849198141

BT - 7th IET International Conference on Power Electronics, Machines and Drives (PEMD 2014)

PB - IEEE

CY - Piscataway, NJ.

T2 - 7th IET International Conference on Power Electronics, Machines and Drives, PEMD 2014

Y2 - 8 April 2014 through 10 April 2014

ER -

The efficient deployment of silicon super-junction MOSFETs as synchronous rectifiers

Abstract

Conference

Keywords

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