The efficient deployment of silicon super-junction MOSFETs as synchronous rectifiers

Philip Anthony, Neville McNeill

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

Abstract

Charge-compensated or “Super-junction” MOSFETs exhibit low on-state resistances and low switching losses. However, the reverse recovery behaviour of their intrinsic diodes and their output capacitance characteristics make their deployment as synchronous rectifiers challenging. A simple auxiliary circuit is proposed to address these issues, by reversing the direction of current flow in the MOSFET channel at turn-off, thereby deactivating the intrinsic anti-parallel diode and partially charging the MOSFET output capacitance. The proposed technique is verified on a 400 V, 1 kW buck converter.
Original languageEnglish
Title of host publication7th IET International Conference on Power Electronics, Machines and Drives (PEMD 2014)
Place of PublicationPiscataway, NJ.
PublisherIEEE
ISBN (Print)9781849198141
DOIs
Publication statusPublished - 10 Apr 2014
Externally publishedYes
Event7th IET International Conference on Power Electronics, Machines and Drives, PEMD 2014 - Manchester, United Kingdom
Duration: 8 Apr 201410 Apr 2014

Conference

Conference7th IET International Conference on Power Electronics, Machines and Drives, PEMD 2014
Abbreviated titlePEMD 2014
CountryUnited Kingdom
CityManchester
Period8/04/1410/04/14

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Keywords

  • inverter
  • MOSFET
  • synchronous rectification

Cite this

Anthony, P., & McNeill, N. (2014). The efficient deployment of silicon super-junction MOSFETs as synchronous rectifiers. In 7th IET International Conference on Power Electronics, Machines and Drives (PEMD 2014) Piscataway, NJ.: IEEE. https://doi.org/10.1049/cp.2014.0331