The efficient deployment of silicon super-junction MOSFETs as synchronous rectifiers

Philip Anthony, Neville McNeill

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

Abstract

Charge-compensated or “Super-junction” MOSFETs exhibit low on-state resistances and low switching losses. However, the reverse recovery behaviour of their intrinsic diodes and their output capacitance characteristics make their deployment as synchronous rectifiers challenging. A simple auxiliary circuit is proposed to address these issues, by reversing the direction of current flow in the MOSFET channel at turn-off, thereby deactivating the intrinsic anti-parallel diode and partially charging the MOSFET output capacitance. The proposed technique is verified on a 400 V, 1 kW buck converter.
LanguageEnglish
Title of host publication7th IET International Conference on Power Electronics, Machines and Drives (PEMD 2014)
Place of PublicationPiscataway, NJ.
PublisherIEEE
ISBN (Print)9781849198141
DOIs
Publication statusPublished - 10 Apr 2014
Externally publishedYes
Event7th IET International Conference on Power Electronics, Machines and Drives PEMD 2014 - Manchester, United Kingdom
Duration: 8 Apr 201410 Apr 2014

Conference

Conference7th IET International Conference on Power Electronics, Machines and Drives PEMD 2014
Abbreviated titlePEMD 2014
CountryUnited Kingdom
CityManchester
Period8/04/1410/04/14

Fingerprint

Diodes
Capacitance
Silicon
Recovery
Networks (circuits)

Keywords

  • inverter
  • MOSFET
  • synchronous rectification

Cite this

Anthony, P., & McNeill, N. (2014). The efficient deployment of silicon super-junction MOSFETs as synchronous rectifiers. In 7th IET International Conference on Power Electronics, Machines and Drives (PEMD 2014) Piscataway, NJ.: IEEE. https://doi.org/10.1049/cp.2014.0331
Anthony, Philip ; McNeill, Neville. / The efficient deployment of silicon super-junction MOSFETs as synchronous rectifiers. 7th IET International Conference on Power Electronics, Machines and Drives (PEMD 2014). Piscataway, NJ. : IEEE, 2014.
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Anthony, P & McNeill, N 2014, The efficient deployment of silicon super-junction MOSFETs as synchronous rectifiers. in 7th IET International Conference on Power Electronics, Machines and Drives (PEMD 2014). IEEE, Piscataway, NJ., 7th IET International Conference on Power Electronics, Machines and Drives PEMD 2014, Manchester, United Kingdom, 8/04/14. https://doi.org/10.1049/cp.2014.0331

The efficient deployment of silicon super-junction MOSFETs as synchronous rectifiers. / Anthony, Philip; McNeill, Neville.

7th IET International Conference on Power Electronics, Machines and Drives (PEMD 2014). Piscataway, NJ. : IEEE, 2014.

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

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N2 - Charge-compensated or “Super-junction” MOSFETs exhibit low on-state resistances and low switching losses. However, the reverse recovery behaviour of their intrinsic diodes and their output capacitance characteristics make their deployment as synchronous rectifiers challenging. A simple auxiliary circuit is proposed to address these issues, by reversing the direction of current flow in the MOSFET channel at turn-off, thereby deactivating the intrinsic anti-parallel diode and partially charging the MOSFET output capacitance. The proposed technique is verified on a 400 V, 1 kW buck converter.

AB - Charge-compensated or “Super-junction” MOSFETs exhibit low on-state resistances and low switching losses. However, the reverse recovery behaviour of their intrinsic diodes and their output capacitance characteristics make their deployment as synchronous rectifiers challenging. A simple auxiliary circuit is proposed to address these issues, by reversing the direction of current flow in the MOSFET channel at turn-off, thereby deactivating the intrinsic anti-parallel diode and partially charging the MOSFET output capacitance. The proposed technique is verified on a 400 V, 1 kW buck converter.

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Anthony P, McNeill N. The efficient deployment of silicon super-junction MOSFETs as synchronous rectifiers. In 7th IET International Conference on Power Electronics, Machines and Drives (PEMD 2014). Piscataway, NJ.: IEEE. 2014 https://doi.org/10.1049/cp.2014.0331