The effects of Si-doped prelayers on the optical properties of InGaN/GaN single quantum well structures

M. J. Davies, P. Dawson, F. C.P. Massabuau, R. A. Oliver, M. J. Kappers, C. J. Humphreys

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22 Citations (Scopus)

Abstract

In this paper, we report on the effects of including Si-doped (In)GaN prelayers on the low temperature optical properties of a blue-light emitting InGaN/GaN single quantum well. We observed a large blue shift of the photoluminescence peak emission energy and significant increases in the radiative recombination rate for the quantum well structures that incorporated Si-doped prelayers. Simulations of the variation of the conduction and valence band energies show that a strong modification of the band profile occurs for the quantum wells on Si-doped prelayers due to an increase in strength of the surface polarization field. The enhanced surface polarization field opposes the built-in field across the quantum well and thus reduces this built-in electric field. This reduction of the electric field across the quantum well reduces the Quantum Confined Stark Effect and is responsible for the observed blue shift and the change in the recombination dynamics.

Original languageEnglish
Article number092106
JournalApplied Physics Letters
Volume105
Issue number9
DOIs
Publication statusPublished - 1 Sept 2014

Keywords

  • Si-doped prelayers
  • optical properties
  • quantum well structures
  • photoluminescence spectroscopy
  • emission spectroscopy
  • doping
  • Light emitting diodes
  • mechanical stress
  • Stark effect

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