The effect of intensity of excitation on CdSe/ZnS quantum dots: opportunities in luminescence sensing

We report changes in the photophysical properties of core-shell type CdSe/ZnS quantum dots (QDs) under optical irradiation. QDs either in aqueous solution or immobilized in a silica sol gel matrix have been excited at different wavelengths and fluxes. Illumination of the sample with 140 fs 700 nm Ti:sapphire laser pulses of the peak power of the order of 4 GW/cm(2) caused gradual increase in the luminescence lifetime from an initial value of 3.5 increasing to 4.5 ns and an increase in luminescence intensity by similar to 8%. Using about 16 GW/cm(2) peak power resulted in a shortening of the luminescence lifetime to 3 ns and a decrease in intensity by similar to 75%. Both photobrightening and photodarkening were fully reversible. We discuss the kinetics of photobrightening and photodarkening and investigate the suitability of QDs as luminescence lifetime sensors with tunable parameters.