The effect of growth temperature on the luminescence and structural properties of gan : tm films grown by gas-source mbe

I.S. Roqan, E. Nogales, K.P. O'Donnell, C. Trager-Cowan, R.W. Martin, G. Halambalakis, O. Briot

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

During molecular beam epitaxy of GaN:Tm films, substrate temperature strongly influences the rare earth incorporation, surface morphology and luminescence spectrum. The Tm incorporation into films grown between 730 and 830 °C was estimated by wavelength-dispersive X-ray (WDX) spectroscopy. Comparative WDX, atomic force microscopy (AFM) and cathodoluminescence (CL) mappings reveal that at an optimal growth temperature between 775 and 780 °C, a high Tm content (2.2 at%) and a smooth surface morphology can be obtained, leading to an intense sharp Tm3+ emission. For lower substrate temperatures, Ga droplets and large (8-15 μm) circular pits mar the sample surface; for higher temperatures, the sharp CL lines disappear due to low Tm content (0.8 at%).
LanguageEnglish
Pages4069-4072
Number of pages3
JournalJournal of Crystal Growth
Volume310
Issue number18
DOIs
Publication statusPublished - 15 Aug 2008

Fingerprint

Growth temperature
Luminescence
Structural properties
Cathodoluminescence
Gases
luminescence
cathodoluminescence
Surface morphology
gases
Earth surface
Substrates
Molecular beam epitaxy
wavelengths
Temperature
Rare earths
temperature
Atomic force microscopy
x rays
molecular beam epitaxy
rare earth elements

Keywords

  • atomic force microscopy
  • X-ray topography
  • molecular beam epitaxy
  • rare earth compounds
  • semiconducting gallium compounds

Cite this

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title = "The effect of growth temperature on the luminescence and structural properties of gan : tm films grown by gas-source mbe",
abstract = "During molecular beam epitaxy of GaN:Tm films, substrate temperature strongly influences the rare earth incorporation, surface morphology and luminescence spectrum. The Tm incorporation into films grown between 730 and 830 °C was estimated by wavelength-dispersive X-ray (WDX) spectroscopy. Comparative WDX, atomic force microscopy (AFM) and cathodoluminescence (CL) mappings reveal that at an optimal growth temperature between 775 and 780 °C, a high Tm content (2.2 at{\%}) and a smooth surface morphology can be obtained, leading to an intense sharp Tm3+ emission. For lower substrate temperatures, Ga droplets and large (8-15 μm) circular pits mar the sample surface; for higher temperatures, the sharp CL lines disappear due to low Tm content (0.8 at{\%}).",
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author = "I.S. Roqan and E. Nogales and K.P. O'Donnell and C. Trager-Cowan and R.W. Martin and G. Halambalakis and O. Briot",
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The effect of growth temperature on the luminescence and structural properties of gan : tm films grown by gas-source mbe. / Roqan, I.S.; Nogales, E.; O'Donnell, K.P.; Trager-Cowan, C.; Martin, R.W.; Halambalakis, G.; Briot, O.

In: Journal of Crystal Growth, Vol. 310, No. 18, 15.08.2008, p. 4069-4072.

Research output: Contribution to journalArticle

TY - JOUR

T1 - The effect of growth temperature on the luminescence and structural properties of gan : tm films grown by gas-source mbe

AU - Roqan, I.S.

AU - Nogales, E.

AU - O'Donnell, K.P.

AU - Trager-Cowan, C.

AU - Martin, R.W.

AU - Halambalakis, G.

AU - Briot, O.

PY - 2008/8/15

Y1 - 2008/8/15

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AB - During molecular beam epitaxy of GaN:Tm films, substrate temperature strongly influences the rare earth incorporation, surface morphology and luminescence spectrum. The Tm incorporation into films grown between 730 and 830 °C was estimated by wavelength-dispersive X-ray (WDX) spectroscopy. Comparative WDX, atomic force microscopy (AFM) and cathodoluminescence (CL) mappings reveal that at an optimal growth temperature between 775 and 780 °C, a high Tm content (2.2 at%) and a smooth surface morphology can be obtained, leading to an intense sharp Tm3+ emission. For lower substrate temperatures, Ga droplets and large (8-15 μm) circular pits mar the sample surface; for higher temperatures, the sharp CL lines disappear due to low Tm content (0.8 at%).

KW - atomic force microscopy

KW - X-ray topography

KW - molecular beam epitaxy

KW - rare earth compounds

KW - semiconducting gallium compounds

UR - http://dx.doi.org/10.1016/j.jcrysgro.2008.05.037

U2 - 10.1016/j.jcrysgro.2008.05.037

DO - 10.1016/j.jcrysgro.2008.05.037

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EP - 4072

JO - Journal of Crystal Growth

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SN - 0022-0248

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