The effect of growth temperature on the luminescence and structural properties of gan : tm films grown by gas-source mbe

I.S. Roqan, E. Nogales, K.P. O'Donnell, C. Trager-Cowan, R.W. Martin, G. Halambalakis, O. Briot

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

During molecular beam epitaxy of GaN:Tm films, substrate temperature strongly influences the rare earth incorporation, surface morphology and luminescence spectrum. The Tm incorporation into films grown between 730 and 830 °C was estimated by wavelength-dispersive X-ray (WDX) spectroscopy. Comparative WDX, atomic force microscopy (AFM) and cathodoluminescence (CL) mappings reveal that at an optimal growth temperature between 775 and 780 °C, a high Tm content (2.2 at%) and a smooth surface morphology can be obtained, leading to an intense sharp Tm3+ emission. For lower substrate temperatures, Ga droplets and large (8-15 μm) circular pits mar the sample surface; for higher temperatures, the sharp CL lines disappear due to low Tm content (0.8 at%).
Original languageEnglish
Pages (from-to)4069-4072
Number of pages3
JournalJournal of Crystal Growth
Volume310
Issue number18
DOIs
Publication statusPublished - 15 Aug 2008

Keywords

  • atomic force microscopy
  • X-ray topography
  • molecular beam epitaxy
  • rare earth compounds
  • semiconducting gallium compounds

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