The dependence of the optical energies on InGaN composition

Research output: Contribution to journalArticle

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Abstract

A wide-ranging experimental approach reveals a linear relationship between photoluminescence band peak energy and measured indium fraction for In[x]Ga[1] N epilayers with 0 < x < 0.40. We examine the dependence of the emission spectrum on composition using local measurements of the average indium content by Rutherford backscattering spectrometry, energy dispersive X-ray analysis, extended X-ray absorption fine structure and wavelength dispersed electron probe micro-analysis. Corresponding absorption and photoluminescence excitation data reveal the existence of a supplementary linear relationship between the optical bandgap and the indium fraction. Our observations provide definitive and conclusive evidence that the optical properties of InGaN do not conform to current theoretical descriptions of alloy band structure.
Original languageEnglish
Pages (from-to)194-196
Number of pages2
JournalMaterials Science and Engineering B
Volume82
Issue number1-3
DOIs
Publication statusPublished - 22 May 2001

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Indium
indium
Photoluminescence
Chemical analysis
photoluminescence
Energy dispersive X ray analysis
Epilayers
Optical band gaps
X ray absorption
Rutherford backscattering spectroscopy
Electron probe microanalysis
electron probes
microanalysis
Band structure
Spectrometry
energy
backscattering
emission spectra
x rays
Optical properties

Keywords

  • Bowing parameter
  • nitride semiconductors
  • pptical properties
  • Stokes' shift
  • nanoscience

Cite this

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title = "The dependence of the optical energies on InGaN composition",
abstract = "A wide-ranging experimental approach reveals a linear relationship between photoluminescence band peak energy and measured indium fraction for In[x]Ga[1] N epilayers with 0 < x < 0.40. We examine the dependence of the emission spectrum on composition using local measurements of the average indium content by Rutherford backscattering spectrometry, energy dispersive X-ray analysis, extended X-ray absorption fine structure and wavelength dispersed electron probe micro-analysis. Corresponding absorption and photoluminescence excitation data reveal the existence of a supplementary linear relationship between the optical bandgap and the indium fraction. Our observations provide definitive and conclusive evidence that the optical properties of InGaN do not conform to current theoretical descriptions of alloy band structure.",
keywords = "Bowing parameter, nitride semiconductors, pptical properties, Stokes' shift, nanoscience",
author = "K.P. O'Donnell and R.W. Martin and C. Trager-Cowan and M.E. White",
year = "2001",
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The dependence of the optical energies on InGaN composition. / O'Donnell, K.P.; Martin, R.W.; Trager-Cowan, C.; White, M.E.

In: Materials Science and Engineering B, Vol. 82, No. 1-3, 22.05.2001, p. 194-196.

Research output: Contribution to journalArticle

TY - JOUR

T1 - The dependence of the optical energies on InGaN composition

AU - O'Donnell, K.P.

AU - Martin, R.W.

AU - Trager-Cowan, C.

AU - White, M.E.

PY - 2001/5/22

Y1 - 2001/5/22

N2 - A wide-ranging experimental approach reveals a linear relationship between photoluminescence band peak energy and measured indium fraction for In[x]Ga[1] N epilayers with 0 < x < 0.40. We examine the dependence of the emission spectrum on composition using local measurements of the average indium content by Rutherford backscattering spectrometry, energy dispersive X-ray analysis, extended X-ray absorption fine structure and wavelength dispersed electron probe micro-analysis. Corresponding absorption and photoluminescence excitation data reveal the existence of a supplementary linear relationship between the optical bandgap and the indium fraction. Our observations provide definitive and conclusive evidence that the optical properties of InGaN do not conform to current theoretical descriptions of alloy band structure.

AB - A wide-ranging experimental approach reveals a linear relationship between photoluminescence band peak energy and measured indium fraction for In[x]Ga[1] N epilayers with 0 < x < 0.40. We examine the dependence of the emission spectrum on composition using local measurements of the average indium content by Rutherford backscattering spectrometry, energy dispersive X-ray analysis, extended X-ray absorption fine structure and wavelength dispersed electron probe micro-analysis. Corresponding absorption and photoluminescence excitation data reveal the existence of a supplementary linear relationship between the optical bandgap and the indium fraction. Our observations provide definitive and conclusive evidence that the optical properties of InGaN do not conform to current theoretical descriptions of alloy band structure.

KW - Bowing parameter

KW - nitride semiconductors

KW - pptical properties

KW - Stokes' shift

KW - nanoscience

UR - http://dx.doi.org/10.1016/S0921-5107(00)00706-6

U2 - 10.1016/S0921-5107(00)00706-6

DO - 10.1016/S0921-5107(00)00706-6

M3 - Article

VL - 82

SP - 194

EP - 196

JO - Materials Science and Engineering B

JF - Materials Science and Engineering B

SN - 0921-5107

IS - 1-3

ER -