The dependence of the optical energies on InGaN composition

K.P. O'Donnell; R.W. Martin; C. Trager-Cowan; M.E. White

doi:10.1016/S0921-5107(00)00706-6

The dependence of the optical energies on InGaN composition

K.P. O'Donnell, R.W. Martin, C. Trager-Cowan, M.E. White

Physics

Research output: Contribution to journal › Article › peer-review

36 Citations (Scopus)

Abstract

A wide-ranging experimental approach reveals a linear relationship between photoluminescence band peak energy and measured indium fraction for In[x]Ga[1] N epilayers with 0 < x < 0.40. We examine the dependence of the emission spectrum on composition using local measurements of the average indium content by Rutherford backscattering spectrometry, energy dispersive X-ray analysis, extended X-ray absorption fine structure and wavelength dispersed electron probe micro-analysis. Corresponding absorption and photoluminescence excitation data reveal the existence of a supplementary linear relationship between the optical bandgap and the indium fraction. Our observations provide definitive and conclusive evidence that the optical properties of InGaN do not conform to current theoretical descriptions of alloy band structure.

Original language	English
Pages (from-to)	194-196
Number of pages	2
Journal	Materials Science and Engineering B
Volume	82
Issue number	1-3
DOIs	https://doi.org/10.1016/S0921-5107(00)00706-6
Publication status	Published - 22 May 2001

Keywords

Bowing parameter
nitride semiconductors
pptical properties
Stokes' shift
nanoscience

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10.1016/S0921-5107(00)00706-6

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title = "The dependence of the optical energies on InGaN composition",

abstract = "A wide-ranging experimental approach reveals a linear relationship between photoluminescence band peak energy and measured indium fraction for In[x]Ga[1] N epilayers with 0 < x < 0.40. We examine the dependence of the emission spectrum on composition using local measurements of the average indium content by Rutherford backscattering spectrometry, energy dispersive X-ray analysis, extended X-ray absorption fine structure and wavelength dispersed electron probe micro-analysis. Corresponding absorption and photoluminescence excitation data reveal the existence of a supplementary linear relationship between the optical bandgap and the indium fraction. Our observations provide definitive and conclusive evidence that the optical properties of InGaN do not conform to current theoretical descriptions of alloy band structure.",

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T1 - The dependence of the optical energies on InGaN composition

AU - O'Donnell, K.P.

AU - Martin, R.W.

AU - Trager-Cowan, C.

AU - White, M.E.

PY - 2001/5/22

Y1 - 2001/5/22

N2 - A wide-ranging experimental approach reveals a linear relationship between photoluminescence band peak energy and measured indium fraction for In[x]Ga[1] N epilayers with 0 < x < 0.40. We examine the dependence of the emission spectrum on composition using local measurements of the average indium content by Rutherford backscattering spectrometry, energy dispersive X-ray analysis, extended X-ray absorption fine structure and wavelength dispersed electron probe micro-analysis. Corresponding absorption and photoluminescence excitation data reveal the existence of a supplementary linear relationship between the optical bandgap and the indium fraction. Our observations provide definitive and conclusive evidence that the optical properties of InGaN do not conform to current theoretical descriptions of alloy band structure.

AB - A wide-ranging experimental approach reveals a linear relationship between photoluminescence band peak energy and measured indium fraction for In[x]Ga[1] N epilayers with 0 < x < 0.40. We examine the dependence of the emission spectrum on composition using local measurements of the average indium content by Rutherford backscattering spectrometry, energy dispersive X-ray analysis, extended X-ray absorption fine structure and wavelength dispersed electron probe micro-analysis. Corresponding absorption and photoluminescence excitation data reveal the existence of a supplementary linear relationship between the optical bandgap and the indium fraction. Our observations provide definitive and conclusive evidence that the optical properties of InGaN do not conform to current theoretical descriptions of alloy band structure.

KW - Bowing parameter

KW - nitride semiconductors

KW - pptical properties

KW - Stokes' shift

KW - nanoscience

UR - http://dx.doi.org/10.1016/S0921-5107(00)00706-6

U2 - 10.1016/S0921-5107(00)00706-6

DO - 10.1016/S0921-5107(00)00706-6

M3 - Article

SN - 0921-5107

VL - 82

SP - 194

EP - 196

JO - Materials Science and Engineering B

JF - Materials Science and Engineering B

IS - 1-3

ER -

The dependence of the optical energies on InGaN composition

Abstract

Keywords

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