The Au/SiOx/a-Si:H structures with very thin anodic oxide layers

V. A. Skryshevsky, V. I. Strikha, Helena Gleskova

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Creation of a high-quality dielectric layer during the formation of the MIS struc-
tures on a-Si:H poses some problems. The thermic oxide, usually used in the MOSFET technology on c-Si, is inconvenient for a-Si:H because of
degradation of the a-Si:tt films owing to effusion of hydrogen deal with some successful employment of the anodic oxidation for the preparation of MIS position-sensitive detectors and for the passivation of large-area solar cells. The present paper describes the influence of the thickness of dielectric layer
prepared by the anodic oxidation on t h e I - V characteristics and optical prope r t i e s of MIS structures, of Au-SiO~-a-Si:H type .
LanguageEnglish
Pages331-338
Number of pages8
JournalCzechoslovak Journal of Physics
Volume42
Issue number3
DOIs
Publication statusPublished - 1992

Fingerprint

MIS (semiconductors)
oxides
oxidation
passivity
field effect transistors
solar cells
degradation
preparation
detectors
hydrogen

Keywords

  • anodic oxide layers
  • solar cells
  • anodic oxidation

Cite this

Skryshevsky, V. A. ; Strikha, V. I. ; Gleskova, Helena. / The Au/SiOx/a-Si:H structures with very thin anodic oxide layers. In: Czechoslovak Journal of Physics. 1992 ; Vol. 42, No. 3. pp. 331-338.
@article{d0e6db0b6cab4acca30ef2e7a91ed588,
title = "The Au/SiOx/a-Si:H structures with very thin anodic oxide layers",
abstract = "Creation of a high-quality dielectric layer during the formation of the MIS struc- tures on a-Si:H poses some problems. The thermic oxide, usually used in the MOSFET technology on c-Si, is inconvenient for a-Si:H because of degradation of the a-Si:tt films owing to effusion of hydrogen deal with some successful employment of the anodic oxidation for the preparation of MIS position-sensitive detectors and for the passivation of large-area solar cells. The present paper describes the influence of the thickness of dielectric layer prepared by the anodic oxidation on t h e I - V characteristics and optical prope r t i e s of MIS structures, of Au-SiO~-a-Si:H type .",
keywords = "anodic oxide layers , solar cells, anodic oxidation",
author = "Skryshevsky, {V. A.} and Strikha, {V. I.} and Helena Gleskova",
year = "1992",
doi = "10.1007/BF01598429",
language = "English",
volume = "42",
pages = "331--338",
journal = "Czechoslovak Journal of Physics",
issn = "0011-4626",
number = "3",

}

The Au/SiOx/a-Si:H structures with very thin anodic oxide layers. / Skryshevsky, V. A.; Strikha, V. I.; Gleskova, Helena.

In: Czechoslovak Journal of Physics, Vol. 42, No. 3, 1992, p. 331-338.

Research output: Contribution to journalArticle

TY - JOUR

T1 - The Au/SiOx/a-Si:H structures with very thin anodic oxide layers

AU - Skryshevsky, V. A.

AU - Strikha, V. I.

AU - Gleskova, Helena

PY - 1992

Y1 - 1992

N2 - Creation of a high-quality dielectric layer during the formation of the MIS struc- tures on a-Si:H poses some problems. The thermic oxide, usually used in the MOSFET technology on c-Si, is inconvenient for a-Si:H because of degradation of the a-Si:tt films owing to effusion of hydrogen deal with some successful employment of the anodic oxidation for the preparation of MIS position-sensitive detectors and for the passivation of large-area solar cells. The present paper describes the influence of the thickness of dielectric layer prepared by the anodic oxidation on t h e I - V characteristics and optical prope r t i e s of MIS structures, of Au-SiO~-a-Si:H type .

AB - Creation of a high-quality dielectric layer during the formation of the MIS struc- tures on a-Si:H poses some problems. The thermic oxide, usually used in the MOSFET technology on c-Si, is inconvenient for a-Si:H because of degradation of the a-Si:tt films owing to effusion of hydrogen deal with some successful employment of the anodic oxidation for the preparation of MIS position-sensitive detectors and for the passivation of large-area solar cells. The present paper describes the influence of the thickness of dielectric layer prepared by the anodic oxidation on t h e I - V characteristics and optical prope r t i e s of MIS structures, of Au-SiO~-a-Si:H type .

KW - anodic oxide layers

KW - solar cells

KW - anodic oxidation

U2 - 10.1007/BF01598429

DO - 10.1007/BF01598429

M3 - Article

VL - 42

SP - 331

EP - 338

JO - Czechoslovak Journal of Physics

T2 - Czechoslovak Journal of Physics

JF - Czechoslovak Journal of Physics

SN - 0011-4626

IS - 3

ER -