Abstract
Creation of a high-quality dielectric layer during the formation of the MIS struc-
tures on a-Si:H poses some problems. The thermic oxide, usually used in the MOSFET technology on c-Si, is inconvenient for a-Si:H because of
degradation of the a-Si:tt films owing to effusion of hydrogen deal with some successful employment of the anodic oxidation for the preparation of MIS position-sensitive detectors and for the passivation of large-area solar cells. The present paper describes the influence of the thickness of dielectric layer
prepared by the anodic oxidation on t h e I - V characteristics and optical prope r t i e s of MIS structures, of Au-SiO~-a-Si:H type .
tures on a-Si:H poses some problems. The thermic oxide, usually used in the MOSFET technology on c-Si, is inconvenient for a-Si:H because of
degradation of the a-Si:tt films owing to effusion of hydrogen deal with some successful employment of the anodic oxidation for the preparation of MIS position-sensitive detectors and for the passivation of large-area solar cells. The present paper describes the influence of the thickness of dielectric layer
prepared by the anodic oxidation on t h e I - V characteristics and optical prope r t i e s of MIS structures, of Au-SiO~-a-Si:H type .
| Original language | English |
|---|---|
| Pages (from-to) | 331-338 |
| Number of pages | 8 |
| Journal | Czechoslovak Journal of Physics |
| Volume | 42 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 1992 |
Keywords
- anodic oxide layers
- solar cells
- anodic oxidation