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Abstract
Previously, we reported that a thin GaN interlayer approach has been developed for growth of 340 nm ultraviolet light emitting diodes (UV-LEDs) with significantly improved performance. In this paper, more recent results on the further development of UV-LEDs with shorter wavelengths are reported, and the limitation of the wavelength of the UV-LEDs that can be pushed to, while retaining high device performance using the approach has been investigated.
Transmission electron microscopy and device-performance data, including electrical and optical characteristics, indicated that the thin GaN interlayer approach can be effectively employed for growth of UV-LEDs to an emission wavelength approaching at least 300 nm. The approach should be taken into account in growth of UV-LEDs on sapphire substrates, as it provides a simple but effective growth method to achieve UV-LEDs with high performance. This paper also reports that a micro-LED array using the UV-LED wafer has been successfully fabricated, offering versatile micro-structured UV light sources for a wide range of applications.
Original language | English |
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Pages (from-to) | 094003 |
Number of pages | 5 |
Journal | Journal of Physics D: Applied Physics |
Volume | 41 |
Issue number | 9 |
DOIs | |
Publication status | Published - 4 Apr 2008 |
Keywords
- ultraviolet light
- LEDs
- thin GaN interlayer
- high temperature AlN buffer
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Dive into the research topics of 'The 310-340nm ultraviolet light emitting diodes grown using a thin GaN interlayer on a high temperature AlN buffer'. Together they form a unique fingerprint.Projects
- 1 Finished
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Semiconductor-Based Hybrid Structures for Ultraviolet Micro-Devices
Dawson, M., Calvez, S., Martin, R. & Watson, I.
EPSRC (Engineering and Physical Sciences Research Council)
1/01/07 → 31/12/10
Project: Research