The 310-340nm ultraviolet light emitting diodes grown using a thin GaN interlayer on a high temperature AlN buffer

T. Wang, K.B. Lee, J. Bai, P.J. Parbrook, G. Ranalli, Q. Wang, R. Airey, A.G. Cullis, H.X. Zhang, D. Massoubre, Z. Gong, I.M. Watson, E. Gu, M.D. Dawson

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Previously, we reported that a thin GaN interlayer approach has been developed for growth of 340 nm ultraviolet light emitting diodes (UV-LEDs) with significantly improved performance. In this paper, more recent results on the further development of UV-LEDs with shorter wavelengths are reported, and the limitation of the wavelength of the UV-LEDs that can be pushed to, while retaining high device performance using the approach has been investigated. Transmission electron microscopy and device-performance data, including electrical and optical characteristics, indicated that the thin GaN interlayer approach can be effectively employed for growth of UV-LEDs to an emission wavelength approaching at least 300 nm. The approach should be taken into account in growth of UV-LEDs on sapphire substrates, as it provides a simple but effective growth method to achieve UV-LEDs with high performance. This paper also reports that a micro-LED array using the UV-LED wafer has been successfully fabricated, offering versatile micro-structured UV light sources for a wide range of applications.
LanguageEnglish
Pages094003
Number of pages5
JournalJournal of Physics D: Applied Physics
Volume41
Issue number9
DOIs
Publication statusPublished - 4 Apr 2008

Fingerprint

ultraviolet radiation
Light emitting diodes
interlayers
Buffers
light emitting diodes
buffers
Temperature
Wavelength
wavelengths
Electron devices
Ultraviolet Rays
Aluminum Oxide
retaining
Sapphire
Ultraviolet radiation
light sources
sapphire
wafers
Transmission electron microscopy
transmission electron microscopy

Keywords

  • ultraviolet light
  • LEDs
  • thin GaN interlayer
  • high temperature AlN buffer

Cite this

Wang, T. ; Lee, K.B. ; Bai, J. ; Parbrook, P.J. ; Ranalli, G. ; Wang, Q. ; Airey, R. ; Cullis, A.G. ; Zhang, H.X. ; Massoubre, D. ; Gong, Z. ; Watson, I.M. ; Gu, E. ; Dawson, M.D. / The 310-340nm ultraviolet light emitting diodes grown using a thin GaN interlayer on a high temperature AlN buffer. In: Journal of Physics D: Applied Physics. 2008 ; Vol. 41, No. 9. pp. 094003.
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abstract = "Previously, we reported that a thin GaN interlayer approach has been developed for growth of 340 nm ultraviolet light emitting diodes (UV-LEDs) with significantly improved performance. In this paper, more recent results on the further development of UV-LEDs with shorter wavelengths are reported, and the limitation of the wavelength of the UV-LEDs that can be pushed to, while retaining high device performance using the approach has been investigated. Transmission electron microscopy and device-performance data, including electrical and optical characteristics, indicated that the thin GaN interlayer approach can be effectively employed for growth of UV-LEDs to an emission wavelength approaching at least 300 nm. The approach should be taken into account in growth of UV-LEDs on sapphire substrates, as it provides a simple but effective growth method to achieve UV-LEDs with high performance. This paper also reports that a micro-LED array using the UV-LED wafer has been successfully fabricated, offering versatile micro-structured UV light sources for a wide range of applications.",
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author = "T. Wang and K.B. Lee and J. Bai and P.J. Parbrook and G. Ranalli and Q. Wang and R. Airey and A.G. Cullis and H.X. Zhang and D. Massoubre and Z. Gong and I.M. Watson and E. Gu and M.D. Dawson",
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Wang, T, Lee, KB, Bai, J, Parbrook, PJ, Ranalli, G, Wang, Q, Airey, R, Cullis, AG, Zhang, HX, Massoubre, D, Gong, Z, Watson, IM, Gu, E & Dawson, MD 2008, 'The 310-340nm ultraviolet light emitting diodes grown using a thin GaN interlayer on a high temperature AlN buffer' Journal of Physics D: Applied Physics, vol. 41, no. 9, pp. 094003. https://doi.org/10.1088/0022-3727/41/9/094003

The 310-340nm ultraviolet light emitting diodes grown using a thin GaN interlayer on a high temperature AlN buffer. / Wang, T.; Lee, K.B.; Bai, J.; Parbrook, P.J.; Ranalli, G.; Wang, Q.; Airey, R.; Cullis, A.G.; Zhang, H.X.; Massoubre, D.; Gong, Z.; Watson, I.M.; Gu, E.; Dawson, M.D.

In: Journal of Physics D: Applied Physics, Vol. 41, No. 9, 04.04.2008, p. 094003.

Research output: Contribution to journalArticle

TY - JOUR

T1 - The 310-340nm ultraviolet light emitting diodes grown using a thin GaN interlayer on a high temperature AlN buffer

AU - Wang, T.

AU - Lee, K.B.

AU - Bai, J.

AU - Parbrook, P.J.

AU - Ranalli, G.

AU - Wang, Q.

AU - Airey, R.

AU - Cullis, A.G.

AU - Zhang, H.X.

AU - Massoubre, D.

AU - Gong, Z.

AU - Watson, I.M.

AU - Gu, E.

AU - Dawson, M.D.

N1 - no electronic version uploaded

PY - 2008/4/4

Y1 - 2008/4/4

N2 - Previously, we reported that a thin GaN interlayer approach has been developed for growth of 340 nm ultraviolet light emitting diodes (UV-LEDs) with significantly improved performance. In this paper, more recent results on the further development of UV-LEDs with shorter wavelengths are reported, and the limitation of the wavelength of the UV-LEDs that can be pushed to, while retaining high device performance using the approach has been investigated. Transmission electron microscopy and device-performance data, including electrical and optical characteristics, indicated that the thin GaN interlayer approach can be effectively employed for growth of UV-LEDs to an emission wavelength approaching at least 300 nm. The approach should be taken into account in growth of UV-LEDs on sapphire substrates, as it provides a simple but effective growth method to achieve UV-LEDs with high performance. This paper also reports that a micro-LED array using the UV-LED wafer has been successfully fabricated, offering versatile micro-structured UV light sources for a wide range of applications.

AB - Previously, we reported that a thin GaN interlayer approach has been developed for growth of 340 nm ultraviolet light emitting diodes (UV-LEDs) with significantly improved performance. In this paper, more recent results on the further development of UV-LEDs with shorter wavelengths are reported, and the limitation of the wavelength of the UV-LEDs that can be pushed to, while retaining high device performance using the approach has been investigated. Transmission electron microscopy and device-performance data, including electrical and optical characteristics, indicated that the thin GaN interlayer approach can be effectively employed for growth of UV-LEDs to an emission wavelength approaching at least 300 nm. The approach should be taken into account in growth of UV-LEDs on sapphire substrates, as it provides a simple but effective growth method to achieve UV-LEDs with high performance. This paper also reports that a micro-LED array using the UV-LED wafer has been successfully fabricated, offering versatile micro-structured UV light sources for a wide range of applications.

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SN - 0022-3727

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