Abstract
| Language | English |
|---|---|
| Pages | 094003 |
| Number of pages | 5 |
| Journal | Journal of Physics D: Applied Physics |
| Volume | 41 |
| Issue number | 9 |
| DOIs | |
| Publication status | Published - 4 Apr 2008 |
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Keywords
- ultraviolet light
- LEDs
- thin GaN interlayer
- high temperature AlN buffer
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The 310-340nm ultraviolet light emitting diodes grown using a thin GaN interlayer on a high temperature AlN buffer. / Wang, T.; Lee, K.B.; Bai, J.; Parbrook, P.J.; Ranalli, G.; Wang, Q.; Airey, R.; Cullis, A.G.; Zhang, H.X.; Massoubre, D.; Gong, Z.; Watson, I.M.; Gu, E.; Dawson, M.D.
In: Journal of Physics D: Applied Physics, Vol. 41, No. 9, 04.04.2008, p. 094003.Research output: Contribution to journal › Article
TY - JOUR
T1 - The 310-340nm ultraviolet light emitting diodes grown using a thin GaN interlayer on a high temperature AlN buffer
AU - Wang, T.
AU - Lee, K.B.
AU - Bai, J.
AU - Parbrook, P.J.
AU - Ranalli, G.
AU - Wang, Q.
AU - Airey, R.
AU - Cullis, A.G.
AU - Zhang, H.X.
AU - Massoubre, D.
AU - Gong, Z.
AU - Watson, I.M.
AU - Gu, E.
AU - Dawson, M.D.
N1 - no electronic version uploaded
PY - 2008/4/4
Y1 - 2008/4/4
N2 - Previously, we reported that a thin GaN interlayer approach has been developed for growth of 340 nm ultraviolet light emitting diodes (UV-LEDs) with significantly improved performance. In this paper, more recent results on the further development of UV-LEDs with shorter wavelengths are reported, and the limitation of the wavelength of the UV-LEDs that can be pushed to, while retaining high device performance using the approach has been investigated. Transmission electron microscopy and device-performance data, including electrical and optical characteristics, indicated that the thin GaN interlayer approach can be effectively employed for growth of UV-LEDs to an emission wavelength approaching at least 300 nm. The approach should be taken into account in growth of UV-LEDs on sapphire substrates, as it provides a simple but effective growth method to achieve UV-LEDs with high performance. This paper also reports that a micro-LED array using the UV-LED wafer has been successfully fabricated, offering versatile micro-structured UV light sources for a wide range of applications.
AB - Previously, we reported that a thin GaN interlayer approach has been developed for growth of 340 nm ultraviolet light emitting diodes (UV-LEDs) with significantly improved performance. In this paper, more recent results on the further development of UV-LEDs with shorter wavelengths are reported, and the limitation of the wavelength of the UV-LEDs that can be pushed to, while retaining high device performance using the approach has been investigated. Transmission electron microscopy and device-performance data, including electrical and optical characteristics, indicated that the thin GaN interlayer approach can be effectively employed for growth of UV-LEDs to an emission wavelength approaching at least 300 nm. The approach should be taken into account in growth of UV-LEDs on sapphire substrates, as it provides a simple but effective growth method to achieve UV-LEDs with high performance. This paper also reports that a micro-LED array using the UV-LED wafer has been successfully fabricated, offering versatile micro-structured UV light sources for a wide range of applications.
KW - ultraviolet light
KW - LEDs
KW - thin GaN interlayer
KW - high temperature AlN buffer
UR - http://www.iop.org/EJ/abstract/0022-3727/41/9/094003/
U2 - 10.1088/0022-3727/41/9/094003
DO - 10.1088/0022-3727/41/9/094003
M3 - Article
VL - 41
SP - 094003
JO - Journal of Physics D: Applied Physics
T2 - Journal of Physics D: Applied Physics
JF - Journal of Physics D: Applied Physics
SN - 0022-3727
IS - 9
ER -