Temperature-dependent spectroscopy and microchip laser operation of Nd:KGd(WO4)2

P. Loiko, S.J. Yoon, J.M. Serres, X Mateos, S.J. Beecher, R.B. Birch, V.G. Savitski, A.J. Kemp, K. Yumashev, U. Griebner, V. Petrov, M. Aguiló, F. Diaz, J.I. Mackenzie

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

High-resolution absorption and stimulated-emission cross-section spectra are presented for monoclinic Nd:KGd(WO4)2 (Nd:KGW) laser crystals in the temperature range 77–450 K. At room-temperature, the maximum stimulated emission cross-section is σSE = 21.4 × 10−20 cm2 at 1067.3 nm, for light polarization E || Nm. The lifetime of the 4F3/2 state of Nd3+ in KGW is practically temperature independent at 115 ± 5 μs. Measurement of the energy transfer upconversion parameter for a 3 at.% Nd:KGW crystal proved that this was significantly smaller than for alternative hosts, ∼2.5 × 10−17 cm3/s. When cut along the Ng optical indicatrix axis, the Nd:KGW crystal was configured as a microchip laser, generating ∼4 W of continuous-wave output at 1067 nm with a slope efficiency of 61% under diode-pumping. Using a highly-doped (10 at.%) Nd:KGW crystal, the slope efficiency reached 71% and 74% when pumped with a laser diode and a Ti:Sapphire laser, respectively. The concept of an ultrathin (250 μm) Nd:KGW microchip laser sandwiched between two synthetic diamond heat-spreaders is demonstrated.
LanguageEnglish
Pages365-372
Number of pages8
JournalOptical Materials
Volume58
Early online date11 Jun 2016
DOIs
Publication statusE-pub ahead of print - 11 Jun 2016

Fingerprint

Spectroscopy
Crystals
Stimulated emission
Lasers
stimulated emission
spectroscopy
crystals
lasers
slopes
Synthetic diamonds
Spreaders
Temperature
temperature
cross sections
Light polarization
Sapphire
Energy transfer
Aluminum Oxide
continuous radiation
Semiconductor lasers

Keywords

  • double tungstate
  • neodymium
  • microchip laser
  • diamond
  • luminescence

Cite this

Loiko, P., Yoon, S. J., Serres, J. M., Mateos, X., Beecher, S. J., Birch, R. B., ... Mackenzie, J. I. (2016). Temperature-dependent spectroscopy and microchip laser operation of Nd:KGd(WO4)2. Optical Materials, 58, 365-372. https://doi.org/10.1016/j.optmat.2016.06.005
Loiko, P. ; Yoon, S.J. ; Serres, J.M. ; Mateos, X ; Beecher, S.J. ; Birch, R.B. ; Savitski, V.G. ; Kemp, A.J. ; Yumashev, K. ; Griebner, U. ; Petrov, V. ; Aguiló, M. ; Diaz, F. ; Mackenzie, J.I. / Temperature-dependent spectroscopy and microchip laser operation of Nd:KGd(WO4)2. In: Optical Materials. 2016 ; Vol. 58. pp. 365-372.
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abstract = "High-resolution absorption and stimulated-emission cross-section spectra are presented for monoclinic Nd:KGd(WO4)2 (Nd:KGW) laser crystals in the temperature range 77–450 K. At room-temperature, the maximum stimulated emission cross-section is σSE = 21.4 × 10−20 cm2 at 1067.3 nm, for light polarization E || Nm. The lifetime of the 4F3/2 state of Nd3+ in KGW is practically temperature independent at 115 ± 5 μs. Measurement of the energy transfer upconversion parameter for a 3 at.{\%} Nd:KGW crystal proved that this was significantly smaller than for alternative hosts, ∼2.5 × 10−17 cm3/s. When cut along the Ng optical indicatrix axis, the Nd:KGW crystal was configured as a microchip laser, generating ∼4 W of continuous-wave output at 1067 nm with a slope efficiency of 61{\%} under diode-pumping. Using a highly-doped (10 at.{\%}) Nd:KGW crystal, the slope efficiency reached 71{\%} and 74{\%} when pumped with a laser diode and a Ti:Sapphire laser, respectively. The concept of an ultrathin (250 μm) Nd:KGW microchip laser sandwiched between two synthetic diamond heat-spreaders is demonstrated.",
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author = "P. Loiko and S.J. Yoon and J.M. Serres and X Mateos and S.J. Beecher and R.B. Birch and V.G. Savitski and A.J. Kemp and K. Yumashev and U. Griebner and V. Petrov and M. Aguil{\'o} and F. Diaz and J.I. Mackenzie",
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Loiko, P, Yoon, SJ, Serres, JM, Mateos, X, Beecher, SJ, Birch, RB, Savitski, VG, Kemp, AJ, Yumashev, K, Griebner, U, Petrov, V, Aguiló, M, Diaz, F & Mackenzie, JI 2016, 'Temperature-dependent spectroscopy and microchip laser operation of Nd:KGd(WO4)2' Optical Materials, vol. 58, pp. 365-372. https://doi.org/10.1016/j.optmat.2016.06.005

Temperature-dependent spectroscopy and microchip laser operation of Nd:KGd(WO4)2. / Loiko, P.; Yoon, S.J.; Serres, J.M.; Mateos, X; Beecher, S.J.; Birch, R.B.; Savitski, V.G.; Kemp, A.J.; Yumashev, K.; Griebner, U.; Petrov, V.; Aguiló, M.; Diaz, F.; Mackenzie, J.I.

In: Optical Materials, Vol. 58, 11.06.2016, p. 365-372.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Temperature-dependent spectroscopy and microchip laser operation of Nd:KGd(WO4)2

AU - Loiko, P.

AU - Yoon, S.J.

AU - Serres, J.M.

AU - Mateos, X

AU - Beecher, S.J.

AU - Birch, R.B.

AU - Savitski, V.G.

AU - Kemp, A.J.

AU - Yumashev, K.

AU - Griebner, U.

AU - Petrov, V.

AU - Aguiló, M.

AU - Diaz, F.

AU - Mackenzie, J.I.

PY - 2016/6/11

Y1 - 2016/6/11

N2 - High-resolution absorption and stimulated-emission cross-section spectra are presented for monoclinic Nd:KGd(WO4)2 (Nd:KGW) laser crystals in the temperature range 77–450 K. At room-temperature, the maximum stimulated emission cross-section is σSE = 21.4 × 10−20 cm2 at 1067.3 nm, for light polarization E || Nm. The lifetime of the 4F3/2 state of Nd3+ in KGW is practically temperature independent at 115 ± 5 μs. Measurement of the energy transfer upconversion parameter for a 3 at.% Nd:KGW crystal proved that this was significantly smaller than for alternative hosts, ∼2.5 × 10−17 cm3/s. When cut along the Ng optical indicatrix axis, the Nd:KGW crystal was configured as a microchip laser, generating ∼4 W of continuous-wave output at 1067 nm with a slope efficiency of 61% under diode-pumping. Using a highly-doped (10 at.%) Nd:KGW crystal, the slope efficiency reached 71% and 74% when pumped with a laser diode and a Ti:Sapphire laser, respectively. The concept of an ultrathin (250 μm) Nd:KGW microchip laser sandwiched between two synthetic diamond heat-spreaders is demonstrated.

AB - High-resolution absorption and stimulated-emission cross-section spectra are presented for monoclinic Nd:KGd(WO4)2 (Nd:KGW) laser crystals in the temperature range 77–450 K. At room-temperature, the maximum stimulated emission cross-section is σSE = 21.4 × 10−20 cm2 at 1067.3 nm, for light polarization E || Nm. The lifetime of the 4F3/2 state of Nd3+ in KGW is practically temperature independent at 115 ± 5 μs. Measurement of the energy transfer upconversion parameter for a 3 at.% Nd:KGW crystal proved that this was significantly smaller than for alternative hosts, ∼2.5 × 10−17 cm3/s. When cut along the Ng optical indicatrix axis, the Nd:KGW crystal was configured as a microchip laser, generating ∼4 W of continuous-wave output at 1067 nm with a slope efficiency of 61% under diode-pumping. Using a highly-doped (10 at.%) Nd:KGW crystal, the slope efficiency reached 71% and 74% when pumped with a laser diode and a Ti:Sapphire laser, respectively. The concept of an ultrathin (250 μm) Nd:KGW microchip laser sandwiched between two synthetic diamond heat-spreaders is demonstrated.

KW - double tungstate

KW - neodymium

KW - microchip laser

KW - diamond

KW - luminescence

UR - http://www.sciencedirect.com/science/article/pii/S0925346716302993

U2 - 10.1016/j.optmat.2016.06.005

DO - 10.1016/j.optmat.2016.06.005

M3 - Article

VL - 58

SP - 365

EP - 372

JO - Optical Materials

T2 - Optical Materials

JF - Optical Materials

SN - 0925-3467

ER -

Loiko P, Yoon SJ, Serres JM, Mateos X, Beecher SJ, Birch RB et al. Temperature-dependent spectroscopy and microchip laser operation of Nd:KGd(WO4)2. Optical Materials. 2016 Jun 11;58:365-372. https://doi.org/10.1016/j.optmat.2016.06.005