Temperature-dependent spectroscopy and microchip laser operation of Nd:KGd(WO4)2

P. Loiko, S.J. Yoon, J.M. Serres, X Mateos, S.J. Beecher, R.B. Birch, V.G. Savitski, A.J. Kemp, K. Yumashev, U. Griebner, V. Petrov, M. Aguiló, F. Diaz, J.I. Mackenzie

Research output: Contribution to journalArticle

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Abstract

High-resolution absorption and stimulated-emission cross-section spectra are presented for monoclinic Nd:KGd(WO4)2 (Nd:KGW) laser crystals in the temperature range 77–450 K. At room-temperature, the maximum stimulated emission cross-section is σSE = 21.4 × 10−20 cm2 at 1067.3 nm, for light polarization E || Nm. The lifetime of the 4F3/2 state of Nd3+ in KGW is practically temperature independent at 115 ± 5 μs. Measurement of the energy transfer upconversion parameter for a 3 at.% Nd:KGW crystal proved that this was significantly smaller than for alternative hosts, ∼2.5 × 10−17 cm3/s. When cut along the Ng optical indicatrix axis, the Nd:KGW crystal was configured as a microchip laser, generating ∼4 W of continuous-wave output at 1067 nm with a slope efficiency of 61% under diode-pumping. Using a highly-doped (10 at.%) Nd:KGW crystal, the slope efficiency reached 71% and 74% when pumped with a laser diode and a Ti:Sapphire laser, respectively. The concept of an ultrathin (250 μm) Nd:KGW microchip laser sandwiched between two synthetic diamond heat-spreaders is demonstrated.
Original languageEnglish
Pages (from-to)365-372
Number of pages8
JournalOptical Materials
Volume58
Early online date11 Jun 2016
DOIs
Publication statusE-pub ahead of print - 11 Jun 2016

Keywords

  • double tungstate
  • neodymium
  • microchip laser
  • diamond
  • luminescence

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