Temperature dependent optical properties of InGaN/GaN quantum well structures

P. Hurst, P. Dawson, S.A. Levetas, M.J. Godfrey, I.M. Watson, G. Duggan

Research output: Contribution to journalArticle

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Abstract

We have investigated the variation of the photoluminescence intensity and decay time as a function of temperature of a series of InGaN/GaN quantum well structures in which the number of quantum wells was varied. All the samples exhibited a decrease in photoluminescence intensity and decay time with increasing temperature with the rate of decrease being reduced as the number of quantum wells was increased. We have compared these results with a theoretical model which describes the effects of thermally excited carrier escape and recapture. We find reasonable agreement with the results of the model and the experiments for the samples incorporating only a few quantum wells supporting the idea that thermally excited carrier loss is the main non-radiative recombination path.
LanguageEnglish
Pages137-140
Number of pages3
JournalPhysica Status Solidi B
Volume228
Issue number1
DOIs
Publication statusPublished - Nov 2001

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Semiconductor quantum wells
Optical properties
quantum wells
optical properties
Photoluminescence
photoluminescence
Temperature
temperature
decay
escape
Experiments

Keywords

  • quantum well structures
  • nitride semiconductors

Cite this

Hurst, P. ; Dawson, P. ; Levetas, S.A. ; Godfrey, M.J. ; Watson, I.M. ; Duggan, G. / Temperature dependent optical properties of InGaN/GaN quantum well structures. In: Physica Status Solidi B. 2001 ; Vol. 228, No. 1. pp. 137-140.
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Temperature dependent optical properties of InGaN/GaN quantum well structures. / Hurst, P.; Dawson, P.; Levetas, S.A.; Godfrey, M.J.; Watson, I.M.; Duggan, G.

In: Physica Status Solidi B, Vol. 228, No. 1, 11.2001, p. 137-140.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Temperature dependent optical properties of InGaN/GaN quantum well structures

AU - Hurst, P.

AU - Dawson, P.

AU - Levetas, S.A.

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AU - Duggan, G.

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N2 - We have investigated the variation of the photoluminescence intensity and decay time as a function of temperature of a series of InGaN/GaN quantum well structures in which the number of quantum wells was varied. All the samples exhibited a decrease in photoluminescence intensity and decay time with increasing temperature with the rate of decrease being reduced as the number of quantum wells was increased. We have compared these results with a theoretical model which describes the effects of thermally excited carrier escape and recapture. We find reasonable agreement with the results of the model and the experiments for the samples incorporating only a few quantum wells supporting the idea that thermally excited carrier loss is the main non-radiative recombination path.

AB - We have investigated the variation of the photoluminescence intensity and decay time as a function of temperature of a series of InGaN/GaN quantum well structures in which the number of quantum wells was varied. All the samples exhibited a decrease in photoluminescence intensity and decay time with increasing temperature with the rate of decrease being reduced as the number of quantum wells was increased. We have compared these results with a theoretical model which describes the effects of thermally excited carrier escape and recapture. We find reasonable agreement with the results of the model and the experiments for the samples incorporating only a few quantum wells supporting the idea that thermally excited carrier loss is the main non-radiative recombination path.

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