Abstract
| Language | English |
|---|---|
| Pages | 137-140 |
| Number of pages | 3 |
| Journal | Physica Status Solidi B |
| Volume | 228 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - Nov 2001 |
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Keywords
- quantum well structures
- nitride semiconductors
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Temperature dependent optical properties of InGaN/GaN quantum well structures. / Hurst, P.; Dawson, P.; Levetas, S.A.; Godfrey, M.J.; Watson, I.M.; Duggan, G.
In: Physica Status Solidi B, Vol. 228, No. 1, 11.2001, p. 137-140.Research output: Contribution to journal › Article
TY - JOUR
T1 - Temperature dependent optical properties of InGaN/GaN quantum well structures
AU - Hurst, P.
AU - Dawson, P.
AU - Levetas, S.A.
AU - Godfrey, M.J.
AU - Watson, I.M.
AU - Duggan, G.
PY - 2001/11
Y1 - 2001/11
N2 - We have investigated the variation of the photoluminescence intensity and decay time as a function of temperature of a series of InGaN/GaN quantum well structures in which the number of quantum wells was varied. All the samples exhibited a decrease in photoluminescence intensity and decay time with increasing temperature with the rate of decrease being reduced as the number of quantum wells was increased. We have compared these results with a theoretical model which describes the effects of thermally excited carrier escape and recapture. We find reasonable agreement with the results of the model and the experiments for the samples incorporating only a few quantum wells supporting the idea that thermally excited carrier loss is the main non-radiative recombination path.
AB - We have investigated the variation of the photoluminescence intensity and decay time as a function of temperature of a series of InGaN/GaN quantum well structures in which the number of quantum wells was varied. All the samples exhibited a decrease in photoluminescence intensity and decay time with increasing temperature with the rate of decrease being reduced as the number of quantum wells was increased. We have compared these results with a theoretical model which describes the effects of thermally excited carrier escape and recapture. We find reasonable agreement with the results of the model and the experiments for the samples incorporating only a few quantum wells supporting the idea that thermally excited carrier loss is the main non-radiative recombination path.
KW - quantum well structures
KW - nitride semiconductors
UR - http://www3.interscience.wiley.com/cgi-bin/fulltext/88010535/PDFSTART
UR - http://dx.doi.org/10.1002/1521-3951(200111)228:1<137::AID-PSSB137>3.0.CO;2-R
U2 - 10.1002/1521-3951(200111)228:1<137::AID-PSSB137>3.0.CO;2-R
DO - 10.1002/1521-3951(200111)228:1<137::AID-PSSB137>3.0.CO;2-R
M3 - Article
VL - 228
SP - 137
EP - 140
JO - Physica Status Solidi B
T2 - Physica Status Solidi B
JF - Physica Status Solidi B
SN - 0370-1972
IS - 1
ER -