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Abstract
A red emission site (hereafter, Eu0), with its main 5D0 to 7F2 peak at 619 nm, is observed by photoluminescence (PL) spectroscopy of Eu-implanted, Mg-doped GaN, in samples annealed at high temperature and pressure (up to 1400 °C, 1 GPa) in order to remove lattice damage. The PL spectrum is strongly temperature-hysteretic between room temperature and ∼20 K: below 30 K, photochromic switching occurs between Eu0 and the usually dominant Eu1 center; upon warming the sample, the Eu0 signal does not recover until the temperature reaches ∼150 K. Photobleaching of Eu1 takes place at low temperatures after cooling, while photo-enhancement of Eu0 takes place at high temperatures after re-warming. These observations suggest a microscopic model of charge-driven defect interconversion in p-type GaN:Eu, Mg.
Original language | English |
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Title of host publication | The Physics of Semiconductors |
Subtitle of host publication | Proceedings of the 31st International Conference on the Physics of Semiconductors (ICPS) 2012 |
Editors | Thomas Ihn, Clemens Rössler, Aleksey Kozikov |
Volume | 1566 |
DOIs | |
Publication status | Published - 4 Dec 2013 |
Keywords
- temperature dependent hysteresis
- emission spectrum
- eu-implanted
- mg-doped
- hvpe gan
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Dive into the research topics of 'Temperature-dependent hysteresis of the emission spectrum of Eu-implanted, Mg-doped HVPE GaN'. Together they form a unique fingerprint.Projects
- 1 Finished
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Gallium nitride enabled hybrid and flexible photonics
Dawson, M., Calvez, S., Gu, E., Martin, R., Skabara, P. & Watson, I.
EPSRC (Engineering and Physical Sciences Research Council)
1/04/11 → 31/03/15
Project: Research