Temperature-dependent hysteresis of the emission spectrum of Eu-implanted, Mg-doped HVPE GaN

K. P. O'Donnell, R. W. Martin, P. R. Edwards, K. Lorenz, E. Alves, M. Bockowski

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

1 Citation (Scopus)

Abstract

A red emission site (hereafter, Eu0), with its main 5D0 to 7F2 peak at 619 nm, is observed by photoluminescence (PL) spectroscopy of Eu-implanted, Mg-doped GaN, in samples annealed at high temperature and pressure (up to 1400 °C, 1 GPa) in order to remove lattice damage. The PL spectrum is strongly temperature-hysteretic between room temperature and ∼20 K: below 30 K, photochromic switching occurs between Eu0 and the usually dominant Eu1 center; upon warming the sample, the Eu0 signal does not recover until the temperature reaches ∼150 K. Photobleaching of Eu1 takes place at low temperatures after cooling, while photo-enhancement of Eu0 takes place at high temperatures after re-warming. These observations suggest a microscopic model of charge-driven defect interconversion in p-type GaN:Eu, Mg.
LanguageEnglish
Title of host publicationThe Physics of Semiconductors
Subtitle of host publicationProceedings of the 31st International Conference on the Physics of Semiconductors (ICPS) 2012
EditorsThomas Ihn, Clemens Rössler, Aleksey Kozikov
Volume1566
DOIs
Publication statusPublished - 4 Dec 2013

Fingerprint

emission spectra
hysteresis
photoluminescence
heating
damage
cooling
temperature
augmentation
defects
room temperature
spectroscopy

Keywords

  • temperature dependent hysteresis
  • emission spectrum
  • eu-implanted
  • mg-doped
  • hvpe gan

Cite this

O'Donnell, K. P., Martin, R. W., Edwards, P. R., Lorenz, K., Alves, E., & Bockowski, M. (2013). Temperature-dependent hysteresis of the emission spectrum of Eu-implanted, Mg-doped HVPE GaN. In T. Ihn, C. Rössler, & A. Kozikov (Eds.), The Physics of Semiconductors: Proceedings of the 31st International Conference on the Physics of Semiconductors (ICPS) 2012 (Vol. 1566) https://doi.org/10.1063/1.4848286
O'Donnell, K. P. ; Martin, R. W. ; Edwards, P. R. ; Lorenz, K. ; Alves, E. ; Bockowski, M. / Temperature-dependent hysteresis of the emission spectrum of Eu-implanted, Mg-doped HVPE GaN. The Physics of Semiconductors: Proceedings of the 31st International Conference on the Physics of Semiconductors (ICPS) 2012. editor / Thomas Ihn ; Clemens Rössler ; Aleksey Kozikov. Vol. 1566 2013.
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abstract = "A red emission site (hereafter, Eu0), with its main 5D0 to 7F2 peak at 619 nm, is observed by photoluminescence (PL) spectroscopy of Eu-implanted, Mg-doped GaN, in samples annealed at high temperature and pressure (up to 1400 °C, 1 GPa) in order to remove lattice damage. The PL spectrum is strongly temperature-hysteretic between room temperature and ∼20 K: below 30 K, photochromic switching occurs between Eu0 and the usually dominant Eu1 center; upon warming the sample, the Eu0 signal does not recover until the temperature reaches ∼150 K. Photobleaching of Eu1 takes place at low temperatures after cooling, while photo-enhancement of Eu0 takes place at high temperatures after re-warming. These observations suggest a microscopic model of charge-driven defect interconversion in p-type GaN:Eu, Mg.",
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year = "2013",
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O'Donnell, KP, Martin, RW, Edwards, PR, Lorenz, K, Alves, E & Bockowski, M 2013, Temperature-dependent hysteresis of the emission spectrum of Eu-implanted, Mg-doped HVPE GaN. in T Ihn, C Rössler & A Kozikov (eds), The Physics of Semiconductors: Proceedings of the 31st International Conference on the Physics of Semiconductors (ICPS) 2012. vol. 1566. https://doi.org/10.1063/1.4848286

Temperature-dependent hysteresis of the emission spectrum of Eu-implanted, Mg-doped HVPE GaN. / O'Donnell, K. P.; Martin, R. W.; Edwards, P. R.; Lorenz, K.; Alves, E.; Bockowski, M.

The Physics of Semiconductors: Proceedings of the 31st International Conference on the Physics of Semiconductors (ICPS) 2012. ed. / Thomas Ihn; Clemens Rössler; Aleksey Kozikov. Vol. 1566 2013.

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

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T1 - Temperature-dependent hysteresis of the emission spectrum of Eu-implanted, Mg-doped HVPE GaN

AU - O'Donnell, K. P.

AU - Martin, R. W.

AU - Edwards, P. R.

AU - Lorenz, K.

AU - Alves, E.

AU - Bockowski, M.

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N2 - A red emission site (hereafter, Eu0), with its main 5D0 to 7F2 peak at 619 nm, is observed by photoluminescence (PL) spectroscopy of Eu-implanted, Mg-doped GaN, in samples annealed at high temperature and pressure (up to 1400 °C, 1 GPa) in order to remove lattice damage. The PL spectrum is strongly temperature-hysteretic between room temperature and ∼20 K: below 30 K, photochromic switching occurs between Eu0 and the usually dominant Eu1 center; upon warming the sample, the Eu0 signal does not recover until the temperature reaches ∼150 K. Photobleaching of Eu1 takes place at low temperatures after cooling, while photo-enhancement of Eu0 takes place at high temperatures after re-warming. These observations suggest a microscopic model of charge-driven defect interconversion in p-type GaN:Eu, Mg.

AB - A red emission site (hereafter, Eu0), with its main 5D0 to 7F2 peak at 619 nm, is observed by photoluminescence (PL) spectroscopy of Eu-implanted, Mg-doped GaN, in samples annealed at high temperature and pressure (up to 1400 °C, 1 GPa) in order to remove lattice damage. The PL spectrum is strongly temperature-hysteretic between room temperature and ∼20 K: below 30 K, photochromic switching occurs between Eu0 and the usually dominant Eu1 center; upon warming the sample, the Eu0 signal does not recover until the temperature reaches ∼150 K. Photobleaching of Eu1 takes place at low temperatures after cooling, while photo-enhancement of Eu0 takes place at high temperatures after re-warming. These observations suggest a microscopic model of charge-driven defect interconversion in p-type GaN:Eu, Mg.

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SN - 9780735411944

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O'Donnell KP, Martin RW, Edwards PR, Lorenz K, Alves E, Bockowski M. Temperature-dependent hysteresis of the emission spectrum of Eu-implanted, Mg-doped HVPE GaN. In Ihn T, Rössler C, Kozikov A, editors, The Physics of Semiconductors: Proceedings of the 31st International Conference on the Physics of Semiconductors (ICPS) 2012. Vol. 1566. 2013 https://doi.org/10.1063/1.4848286