Temperature-dependent hysteresis of the emission spectrum of Eu-implanted, Mg-doped HVPE GaN

K. P. O'Donnell; R. W. Martin; P. R. Edwards; K. Lorenz; E. Alves; M. Bockowski

doi:10.1063/1.4848286

Temperature-dependent hysteresis of the emission spectrum of Eu-implanted, Mg-doped HVPE GaN

K. P. O'Donnell, R. W. Martin, P. R. Edwards, K. Lorenz, E. Alves, M. Bockowski

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution book

4 Citations (Scopus)

Abstract

A red emission site (hereafter, Eu0), with its main 5D0 to 7F2 peak at 619 nm, is observed by photoluminescence (PL) spectroscopy of Eu-implanted, Mg-doped GaN, in samples annealed at high temperature and pressure (up to 1400 °C, 1 GPa) in order to remove lattice damage. The PL spectrum is strongly temperature-hysteretic between room temperature and ∼20 K: below 30 K, photochromic switching occurs between Eu0 and the usually dominant Eu1 center; upon warming the sample, the Eu0 signal does not recover until the temperature reaches ∼150 K. Photobleaching of Eu1 takes place at low temperatures after cooling, while photo-enhancement of Eu0 takes place at high temperatures after re-warming. These observations suggest a microscopic model of charge-driven defect interconversion in p-type GaN:Eu, Mg.

Original language	English
Title of host publication	The Physics of Semiconductors
Subtitle of host publication	Proceedings of the 31st International Conference on the Physics of Semiconductors (ICPS) 2012
Editors	Thomas Ihn, Clemens Rössler, Aleksey Kozikov
Volume	1566
DOIs	https://doi.org/10.1063/1.4848286
Publication status	Published - 4 Dec 2013

Keywords

temperature dependent hysteresis
emission spectrum
eu-implanted
mg-doped
hvpe gan

Access to Document

10.1063/1.4848286

Gallium nitride enabled hybrid and flexible photonics
Dawson, M. (Principal Investigator), Calvez, S. (Co-investigator), Gu, E. (Co-investigator), Martin, R. (Co-investigator), Skabara, P. (Co-investigator) & Watson, I. (Co-investigator)
EPSRC (Engineering and Physical Sciences Research Council)
1/04/11 → 31/03/15
Project: Research

Cite this

O'Donnell, K. P., Martin, R. W., Edwards, P. R., Lorenz, K., Alves, E., & Bockowski, M. (2013). Temperature-dependent hysteresis of the emission spectrum of Eu-implanted, Mg-doped HVPE GaN. In T. Ihn, C. Rössler, & A. Kozikov (Eds.), The Physics of Semiconductors: Proceedings of the 31st International Conference on the Physics of Semiconductors (ICPS) 2012 (Vol. 1566) https://doi.org/10.1063/1.4848286

@inproceedings{ffd037afb24d473facb26dfb908e5dc4,

title = "Temperature-dependent hysteresis of the emission spectrum of Eu-implanted, Mg-doped HVPE GaN",

abstract = "A red emission site (hereafter, Eu0), with its main 5D0 to 7F2 peak at 619 nm, is observed by photoluminescence (PL) spectroscopy of Eu-implanted, Mg-doped GaN, in samples annealed at high temperature and pressure (up to 1400 °C, 1 GPa) in order to remove lattice damage. The PL spectrum is strongly temperature-hysteretic between room temperature and ∼20 K: below 30 K, photochromic switching occurs between Eu0 and the usually dominant Eu1 center; upon warming the sample, the Eu0 signal does not recover until the temperature reaches ∼150 K. Photobleaching of Eu1 takes place at low temperatures after cooling, while photo-enhancement of Eu0 takes place at high temperatures after re-warming. These observations suggest a microscopic model of charge-driven defect interconversion in p-type GaN:Eu, Mg.",

keywords = "temperature dependent hysteresis, emission spectrum, eu-implanted, mg-doped, hvpe gan",

author = "O'Donnell, {K. P.} and Martin, {R. W.} and Edwards, {P. R.} and K. Lorenz and E. Alves and M. Bockowski",

year = "2013",

month = dec,

day = "4",

doi = "10.1063/1.4848286",

language = "English",

isbn = "9780735411944",

volume = "1566",

editor = "Ihn, {Thomas } and R{\"o}ssler, {Clemens } and Kozikov, {Aleksey }",

booktitle = "The Physics of Semiconductors",

}

O'Donnell, KP, Martin, RW , Edwards, PR, Lorenz, K, Alves, E & Bockowski, M 2013, Temperature-dependent hysteresis of the emission spectrum of Eu-implanted, Mg-doped HVPE GaN. in T Ihn, C Rössler & A Kozikov (eds), The Physics of Semiconductors: Proceedings of the 31st International Conference on the Physics of Semiconductors (ICPS) 2012. vol. 1566. https://doi.org/10.1063/1.4848286

Temperature-dependent hysteresis of the emission spectrum of Eu-implanted, Mg-doped HVPE GaN. / O'Donnell, K. P.; Martin, R. W.; Edwards, P. R. et al.
The Physics of Semiconductors: Proceedings of the 31st International Conference on the Physics of Semiconductors (ICPS) 2012. ed. / Thomas Ihn; Clemens Rössler; Aleksey Kozikov. Vol. 1566 2013.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution book

TY - GEN

T1 - Temperature-dependent hysteresis of the emission spectrum of Eu-implanted, Mg-doped HVPE GaN

AU - O'Donnell, K. P.

AU - Martin, R. W.

AU - Edwards, P. R.

AU - Lorenz, K.

AU - Alves, E.

AU - Bockowski, M.

PY - 2013/12/4

Y1 - 2013/12/4

N2 - A red emission site (hereafter, Eu0), with its main 5D0 to 7F2 peak at 619 nm, is observed by photoluminescence (PL) spectroscopy of Eu-implanted, Mg-doped GaN, in samples annealed at high temperature and pressure (up to 1400 °C, 1 GPa) in order to remove lattice damage. The PL spectrum is strongly temperature-hysteretic between room temperature and ∼20 K: below 30 K, photochromic switching occurs between Eu0 and the usually dominant Eu1 center; upon warming the sample, the Eu0 signal does not recover until the temperature reaches ∼150 K. Photobleaching of Eu1 takes place at low temperatures after cooling, while photo-enhancement of Eu0 takes place at high temperatures after re-warming. These observations suggest a microscopic model of charge-driven defect interconversion in p-type GaN:Eu, Mg.

AB - A red emission site (hereafter, Eu0), with its main 5D0 to 7F2 peak at 619 nm, is observed by photoluminescence (PL) spectroscopy of Eu-implanted, Mg-doped GaN, in samples annealed at high temperature and pressure (up to 1400 °C, 1 GPa) in order to remove lattice damage. The PL spectrum is strongly temperature-hysteretic between room temperature and ∼20 K: below 30 K, photochromic switching occurs between Eu0 and the usually dominant Eu1 center; upon warming the sample, the Eu0 signal does not recover until the temperature reaches ∼150 K. Photobleaching of Eu1 takes place at low temperatures after cooling, while photo-enhancement of Eu0 takes place at high temperatures after re-warming. These observations suggest a microscopic model of charge-driven defect interconversion in p-type GaN:Eu, Mg.

KW - temperature dependent hysteresis

KW - emission spectrum

KW - eu-implanted

KW - mg-doped

KW - hvpe gan

U2 - 10.1063/1.4848286

DO - 10.1063/1.4848286

M3 - Conference contribution book

SN - 9780735411944

VL - 1566

BT - The Physics of Semiconductors

A2 - Ihn, Thomas

A2 - Rössler, Clemens

A2 - Kozikov, Aleksey

ER -

Temperature-dependent hysteresis of the emission spectrum of Eu-implanted, Mg-doped HVPE GaN

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Keywords

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Gallium nitride enabled hybrid and flexible photonics

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