Temperature-dependent efficiency droop of blue InGaN micro-light emitting diodes

Pengfei Tian, Jonathan J. D. McKendry, Johannes Herrnsdorf, Scott Watson, Ricardo Ferreira, Ian M. Watson, Erdan Gu, Anthony E. Kelly, Martin D. Dawson

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Abstract

Temperature-dependent trends in radiative and Auger recombination coefficients have been determined at different injection carrier concentrations using InGaN micro-light emitting diodes 40 μm in diameter. The differential lifetime was obtained first from the measured modulation bandwidth and was then employed to calculate the carrier concentration in the quantum well active region. When the temperature increases, the carrier concentration increases, but both the radiative and Auger recombination coefficients decrease. In addition, the temperature dependence of radiative and Auger recombination coefficients is weaker at a higher injection carrier concentration, which is strongly related to phase space filling.

Original languageEnglish
Article number171107
Number of pages5
JournalApplied Physics Letters
Volume105
Issue number17
DOIs
Publication statusPublished - 27 Oct 2014

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Keywords

  • InGaN micro-light emitting diodes
  • LEDs
  • Auger coefficient
  • micro-LEDs
  • temperature-dependent modulation bandwidth
  • visible light communications

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