Abstract
Temperature-dependent trends in radiative and Auger recombination coefficients have been determined at different injection carrier concentrations using InGaN micro-light emitting diodes 40 μm in diameter. The differential lifetime was obtained first from the measured modulation bandwidth and was then employed to calculate the carrier concentration in the quantum well active region. When the temperature increases, the carrier concentration increases, but both the radiative and Auger recombination coefficients decrease. In addition, the temperature dependence of radiative and Auger recombination coefficients is weaker at a higher injection carrier concentration, which is strongly related to phase space filling.
| Language | English |
|---|---|
| Article number | 171107 |
| Number of pages | 5 |
| Journal | Applied Physics Letters |
| Volume | 105 |
| Issue number | 17 |
| DOIs | |
| Publication status | Published - 27 Oct 2014 |
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Keywords
- InGaN micro-light emitting diodes
- LEDs
- Auger coefficient
- micro-LEDs
- temperature-dependent modulation bandwidth
- visible light communications
Cite this
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Temperature-dependent efficiency droop of blue InGaN micro-light emitting diodes. / Tian, Pengfei; McKendry, Jonathan J. D.; Herrnsdorf, Johannes; Watson, Scott; Ferreira, Ricardo; Watson, Ian M.; Gu, Erdan; Kelly, Anthony E.; Dawson, Martin D.
In: Applied Physics Letters, Vol. 105, No. 17, 171107, 27.10.2014.Research output: Contribution to journal › Article
TY - JOUR
T1 - Temperature-dependent efficiency droop of blue InGaN micro-light emitting diodes
AU - Tian, Pengfei
AU - McKendry, Jonathan J. D.
AU - Herrnsdorf, Johannes
AU - Watson, Scott
AU - Ferreira, Ricardo
AU - Watson, Ian M.
AU - Gu, Erdan
AU - Kelly, Anthony E.
AU - Dawson, Martin D.
N1 - The following article appeared as "Temperature-dependent efficiency droop of blue InGaN micro-light emitting diodes", Tian, Pengfei and McKendry, Jonathan J. D. and Herrnsdorf, Johannes and Watson, Scott and Ferreira, Ricardo and Watson, Ian M. and Gu, Erdan and Kelly, Anthony E. and Dawson, Martin D., Applied Physics Letters, 105, 171107 (2014) and may be found at http://dx.doi.org/10.1063/1.4900865. Copyright (2014) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
PY - 2014/10/27
Y1 - 2014/10/27
N2 - Temperature-dependent trends in radiative and Auger recombination coefficients have been determined at different injection carrier concentrations using InGaN micro-light emitting diodes 40 μm in diameter. The differential lifetime was obtained first from the measured modulation bandwidth and was then employed to calculate the carrier concentration in the quantum well active region. When the temperature increases, the carrier concentration increases, but both the radiative and Auger recombination coefficients decrease. In addition, the temperature dependence of radiative and Auger recombination coefficients is weaker at a higher injection carrier concentration, which is strongly related to phase space filling.
AB - Temperature-dependent trends in radiative and Auger recombination coefficients have been determined at different injection carrier concentrations using InGaN micro-light emitting diodes 40 μm in diameter. The differential lifetime was obtained first from the measured modulation bandwidth and was then employed to calculate the carrier concentration in the quantum well active region. When the temperature increases, the carrier concentration increases, but both the radiative and Auger recombination coefficients decrease. In addition, the temperature dependence of radiative and Auger recombination coefficients is weaker at a higher injection carrier concentration, which is strongly related to phase space filling.
KW - InGaN micro-light emitting diodes
KW - LEDs
KW - Auger coefficient
KW - micro-LEDs
KW - temperature-dependent modulation bandwidth
KW - visible light communications
UR - http://www.scopus.com/inward/record.url?scp=84908395688&partnerID=8YFLogxK
UR - http://scitation.aip.org/content/aip/journal/apl
U2 - 10.1063/1.4900865
DO - 10.1063/1.4900865
M3 - Article
VL - 105
JO - Applied Physics Letters
T2 - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 17
M1 - 171107
ER -