Temperature-dependent efficiency droop of blue InGaN micro-light emitting diodes

Pengfei Tian; Jonathan J. D. McKendry; Johannes Herrnsdorf; Scott Watson; Ricardo Ferreira; Ian M. Watson; Erdan Gu; Anthony E. Kelly; Martin D. Dawson

doi:10.1063/1.4900865

Temperature-dependent efficiency droop of blue InGaN micro-light emitting diodes

Pengfei Tian, Jonathan J. D. McKendry, Johannes Herrnsdorf, Scott Watson, Ricardo Ferreira, Ian M. Watson, Erdan Gu, Anthony E. Kelly, Martin D. Dawson

Research output: Contribution to journal › Article › peer-review

32 Citations (Scopus)

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Abstract

Temperature-dependent trends in radiative and Auger recombination coefficients have been determined at different injection carrier concentrations using InGaN micro-light emitting diodes 40 μm in diameter. The differential lifetime was obtained first from the measured modulation bandwidth and was then employed to calculate the carrier concentration in the quantum well active region. When the temperature increases, the carrier concentration increases, but both the radiative and Auger recombination coefficients decrease. In addition, the temperature dependence of radiative and Auger recombination coefficients is weaker at a higher injection carrier concentration, which is strongly related to phase space filling.

Original language	English
Article number	171107
Number of pages	5
Journal	Applied Physics Letters
Volume	105
Issue number	17
DOIs	https://doi.org/10.1063/1.4900865
Publication status	Published - 27 Oct 2014

Keywords

InGaN micro-light emitting diodes
LEDs
Auger coefficient
micro-LEDs
temperature-dependent modulation bandwidth
visible light communications

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10.1063/1.4900865

Tian-etal-APL2014-temperature-dependent-efficiency-droop-of-blue-InGaN-micro-light-emitting-diodesFinal published version, 1.01 MB

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title = "Temperature-dependent efficiency droop of blue InGaN micro-light emitting diodes",

abstract = "Temperature-dependent trends in radiative and Auger recombination coefficients have been determined at different injection carrier concentrations using InGaN micro-light emitting diodes 40 μm in diameter. The differential lifetime was obtained first from the measured modulation bandwidth and was then employed to calculate the carrier concentration in the quantum well active region. When the temperature increases, the carrier concentration increases, but both the radiative and Auger recombination coefficients decrease. In addition, the temperature dependence of radiative and Auger recombination coefficients is weaker at a higher injection carrier concentration, which is strongly related to phase space filling.",

keywords = "InGaN micro-light emitting diodes, LEDs, Auger coefficient, micro-LEDs, temperature-dependent modulation bandwidth, visible light communications",

author = "Pengfei Tian and McKendry, {Jonathan J. D.} and Johannes Herrnsdorf and Scott Watson and Ricardo Ferreira and Watson, {Ian M.} and Erdan Gu and Kelly, {Anthony E.} and Dawson, {Martin D.}",

note = "The following article appeared as {"}Temperature-dependent efficiency droop of blue InGaN micro-light emitting diodes{"}, Tian, Pengfei and McKendry, Jonathan J. D. and Herrnsdorf, Johannes and Watson, Scott and Ferreira, Ricardo and Watson, Ian M. and Gu, Erdan and Kelly, Anthony E. and Dawson, Martin D., Applied Physics Letters, 105, 171107 (2014) and may be found at http://dx.doi.org/10.1063/1.4900865. Copyright (2014) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.",

year = "2014",

month = oct,

day = "27",

doi = "10.1063/1.4900865",

language = "English",

volume = "105",

journal = "Applied Physics Letters",

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Temperature-dependent efficiency droop of blue InGaN micro-light emitting diodes. / Tian, Pengfei; McKendry, Jonathan J. D.; Herrnsdorf, Johannes; Watson, Scott; Ferreira, Ricardo; Watson, Ian M.; Gu, Erdan; Kelly, Anthony E.; Dawson, Martin D.

In: Applied Physics Letters, Vol. 105, No. 17, 171107, 27.10.2014.

Research output: Contribution to journal › Article › peer-review

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T1 - Temperature-dependent efficiency droop of blue InGaN micro-light emitting diodes

AU - Tian, Pengfei

AU - McKendry, Jonathan J. D.

AU - Herrnsdorf, Johannes

AU - Watson, Scott

AU - Ferreira, Ricardo

AU - Watson, Ian M.

AU - Gu, Erdan

AU - Kelly, Anthony E.

AU - Dawson, Martin D.

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PY - 2014/10/27

Y1 - 2014/10/27

N2 - Temperature-dependent trends in radiative and Auger recombination coefficients have been determined at different injection carrier concentrations using InGaN micro-light emitting diodes 40 μm in diameter. The differential lifetime was obtained first from the measured modulation bandwidth and was then employed to calculate the carrier concentration in the quantum well active region. When the temperature increases, the carrier concentration increases, but both the radiative and Auger recombination coefficients decrease. In addition, the temperature dependence of radiative and Auger recombination coefficients is weaker at a higher injection carrier concentration, which is strongly related to phase space filling.

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KW - InGaN micro-light emitting diodes

KW - LEDs

KW - Auger coefficient

KW - micro-LEDs

KW - temperature-dependent modulation bandwidth

KW - visible light communications

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Temperature-dependent efficiency droop of blue InGaN micro-light emitting diodes

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Ian Watson

Ultra-Parallel Visible Light Communications (UP-VLC)

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Temperature-dependent efficiency droop of blue InGaN micro-light emitting diodes

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