Temperature dependence of semiconductor band gaps

Research output: Contribution to journalArticle

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Abstract

The application of a simple three-parameter fit to the temperature dependence of semiconductor band gaps is justified on both practical and theoretical grounds. In all trials the fit is numerically better than that obtained using the widely quoted Varshni equation. The formula is shown to be compatible with reasonable assumptions about the influence of phonons on the band-gap energy. Approximate analytical expressions are derived for the entropy and enthalpy of formation of electron-hole pairs in semiconductors.

LanguageEnglish
Pages2924-2926
Number of pages3
JournalApplied Physics Letters
Volume58
Issue number25
DOIs
Publication statusPublished - 24 Jun 1991

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temperature dependence
phonons
enthalpy
entropy

Keywords

  • semiconductor band gaps
  • band-gap energy
  • Varshni equation

Cite this

O'Donnell, K. P. ; Chen, X. / Temperature dependence of semiconductor band gaps. In: Applied Physics Letters. 1991 ; Vol. 58, No. 25. pp. 2924-2926.
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Temperature dependence of semiconductor band gaps. / O'Donnell, K. P.; Chen, X.

In: Applied Physics Letters, Vol. 58, No. 25, 24.06.1991, p. 2924-2926.

Research output: Contribution to journalArticle

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