Temperature dependence of semiconductor band gaps

K. P. O'Donnell; X. Chen

doi:10.1063/1.104723

Temperature dependence of semiconductor band gaps

K. P. O'Donnell^*, X. Chen

^*Corresponding author for this work

Physics

Research output: Contribution to journal › Article › peer-review

1028 Citations (Scopus)

Abstract

The application of a simple three-parameter fit to the temperature dependence of semiconductor band gaps is justified on both practical and theoretical grounds. In all trials the fit is numerically better than that obtained using the widely quoted Varshni equation. The formula is shown to be compatible with reasonable assumptions about the influence of phonons on the band-gap energy. Approximate analytical expressions are derived for the entropy and enthalpy of formation of electron-hole pairs in semiconductors.

Original language	English
Pages (from-to)	2924-2926
Number of pages	3
Journal	Applied Physics Letters
Volume	58
Issue number	25
DOIs	https://doi.org/10.1063/1.104723
Publication status	Published - 24 Jun 1991

Keywords

semiconductor band gaps
band-gap energy
Varshni equation

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10.1063/1.104723

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AB - The application of a simple three-parameter fit to the temperature dependence of semiconductor band gaps is justified on both practical and theoretical grounds. In all trials the fit is numerically better than that obtained using the widely quoted Varshni equation. The formula is shown to be compatible with reasonable assumptions about the influence of phonons on the band-gap energy. Approximate analytical expressions are derived for the entropy and enthalpy of formation of electron-hole pairs in semiconductors.

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Temperature dependence of semiconductor band gaps

Abstract

Keywords

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