Temperature dependence of excitonic emission in CuInSe2

M. V. Yakushev; R. W. Martin; A. V. Mudryi; S Sadewasser; D AbouRas; B Lake; HW Schock

doi:10.1002/pssc.200881155

Temperature dependence of excitonic emission in CuInSe2

M. V. Yakushev, R. W. Martin, A. V. Mudryi, S Sadewasser (Editor), D AbouRas (Editor), B Lake (Editor), HW Schock (Editor)

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

Radiative recombination processes in CuInSe2 (CIS) single crystals grown by the, vertical Bridgman technique were studied using photoluminescence (PL) and reflectance (RF) spectroscopies at temperatures from 4.2 to 60 K, and excitation intensity from 0.6 to 30 W/cm(2). Study of the quenching parameters of the A and B freeo and first three bound-excitons (M1, M2 and M3) in high-quality CuInSe2 single crystal leads to estimates for the binding energy of the A (7.7 meV) and B (7.9 meV) free excitons as well as dissociation energies for the M1, M2 and M3 bound-excitons.

Original language	English
Pages (from-to)	1082-1085
Number of pages	3
Journal	Physica Status Solidi C
Volume	6
Issue number	5
DOIs	https://doi.org/10.1002/pssc.200881155
Publication status	Published - 2009
Event	16th International Conference on Ternary and Multinary Compounds - Berlin, Germany Duration: 15 Sept 2009 → 19 Sept 2009

Keywords

single-crystals
photoluminescence
defect physics
optical-properties
chalcopyrite semiconductor

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10.1002/pssc.200881155

Magnetic Field - and Pressure - Optical Effects In CULNSE2 And CULNS2
Martin, R. (Principal Investigator) & Yakushev, M. V. (Co-investigator)
EPSRC (Engineering and Physical Sciences Research Council)
23/09/07 → 22/01/11
Project: Research

Cite this

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title = "Temperature dependence of excitonic emission in CuInSe2",

abstract = "Radiative recombination processes in CuInSe2 (CIS) single crystals grown by the, vertical Bridgman technique were studied using photoluminescence (PL) and reflectance (RF) spectroscopies at temperatures from 4.2 to 60 K, and excitation intensity from 0.6 to 30 W/cm(2). Study of the quenching parameters of the A and B freeo and first three bound-excitons (M1, M2 and M3) in high-quality CuInSe2 single crystal leads to estimates for the binding energy of the A (7.7 meV) and B (7.9 meV) free excitons as well as dissociation energies for the M1, M2 and M3 bound-excitons.",

keywords = "single-crystals, photoluminescence , defect physics, optical-properties , chalcopyrite semiconductor",

author = "Yakushev, {M. V.} and Martin, {R. W.} and Mudryi, {A. V.} and S Sadewasser and D AbouRas and B Lake and HW Schock",

note = "Special Issue: 16th International Conference on Ternary and Multinary Compounds (ICTMC16); 16th International Conference on Ternary and Multinary Compounds ; Conference date: 15-09-2009 Through 19-09-2009",

year = "2009",

doi = "10.1002/pssc.200881155",

language = "English",

volume = "6",

pages = "1082--1085",

journal = "Physica Status Solidi C",

issn = "1862-6351",

number = "5",

}

TY - JOUR

T1 - Temperature dependence of excitonic emission in CuInSe2

AU - Yakushev, M. V.

AU - Martin, R. W.

AU - Mudryi, A. V.

A2 - Sadewasser, S

A2 - AbouRas, D

A2 - Lake, B

A2 - Schock, HW

N1 - Special Issue: 16th International Conference on Ternary and Multinary Compounds (ICTMC16)

PY - 2009

Y1 - 2009

N2 - Radiative recombination processes in CuInSe2 (CIS) single crystals grown by the, vertical Bridgman technique were studied using photoluminescence (PL) and reflectance (RF) spectroscopies at temperatures from 4.2 to 60 K, and excitation intensity from 0.6 to 30 W/cm(2). Study of the quenching parameters of the A and B freeo and first three bound-excitons (M1, M2 and M3) in high-quality CuInSe2 single crystal leads to estimates for the binding energy of the A (7.7 meV) and B (7.9 meV) free excitons as well as dissociation energies for the M1, M2 and M3 bound-excitons.

AB - Radiative recombination processes in CuInSe2 (CIS) single crystals grown by the, vertical Bridgman technique were studied using photoluminescence (PL) and reflectance (RF) spectroscopies at temperatures from 4.2 to 60 K, and excitation intensity from 0.6 to 30 W/cm(2). Study of the quenching parameters of the A and B freeo and first three bound-excitons (M1, M2 and M3) in high-quality CuInSe2 single crystal leads to estimates for the binding energy of the A (7.7 meV) and B (7.9 meV) free excitons as well as dissociation energies for the M1, M2 and M3 bound-excitons.

KW - single-crystals

KW - photoluminescence

KW - defect physics

KW - optical-properties

KW - chalcopyrite semiconductor

U2 - 10.1002/pssc.200881155

DO - 10.1002/pssc.200881155

M3 - Article

SN - 1862-6351

VL - 6

SP - 1082

EP - 1085

JO - Physica Status Solidi C

JF - Physica Status Solidi C

IS - 5

T2 - 16th International Conference on Ternary and Multinary Compounds

Y2 - 15 September 2009 through 19 September 2009

ER -

Temperature dependence of excitonic emission in CuInSe2

Abstract

Keywords

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Projects

Magnetic Field - and Pressure - Optical Effects In CULNSE2 And CULNS2

Cite this