Temperature dependence of excitonic emission in CuInSe2

M. V. Yakushev, R. W. Martin, A. V. Mudryi, S Sadewasser (Editor), D AbouRas (Editor), B Lake (Editor), HW Schock (Editor)

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Abstract

Radiative recombination processes in CuInSe2 (CIS) single crystals grown by the, vertical Bridgman technique were studied using photoluminescence (PL) and reflectance (RF) spectroscopies at temperatures from 4.2 to 60 K, and excitation intensity from 0.6 to 30 W/cm(2). Study of the quenching parameters of the A and B freeo and first three bound-excitons (M1, M2 and M3) in high-quality CuInSe2 single crystal leads to estimates for the binding energy of the A (7.7 meV) and B (7.9 meV) free excitons as well as dissociation energies for the M1, M2 and M3 bound-excitons.
Original languageEnglish
Pages (from-to)1082-1085
Number of pages3
JournalPhysica Status Solidi C
Volume6
Issue number5
DOIs
Publication statusPublished - 2009
Event16th International Conference on Ternary and Multinary Compounds - Berlin, Germany
Duration: 15 Sep 200919 Sep 2009

Keywords

  • single-crystals
  • photoluminescence
  • defect physics
  • optical-properties
  • chalcopyrite semiconductor

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