Temperature dependence of excitonic emission in CuInSe2

M. V. Yakushev, R. W. Martin, A. V. Mudryi, S Sadewasser (Editor), D AbouRas (Editor), B Lake (Editor), HW Schock (Editor)

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Radiative recombination processes in CuInSe2 (CIS) single crystals grown by the, vertical Bridgman technique were studied using photoluminescence (PL) and reflectance (RF) spectroscopies at temperatures from 4.2 to 60 K, and excitation intensity from 0.6 to 30 W/cm(2). Study of the quenching parameters of the A and B freeo and first three bound-excitons (M1, M2 and M3) in high-quality CuInSe2 single crystal leads to estimates for the binding energy of the A (7.7 meV) and B (7.9 meV) free excitons as well as dissociation energies for the M1, M2 and M3 bound-excitons.
LanguageEnglish
Pages1082-1085
Number of pages3
JournalPhysica Status Solidi C
Volume6
Issue number5
DOIs
Publication statusPublished - 2009
Event16th International Conference on Ternary and Multinary Compounds - Berlin, Germany
Duration: 15 Sep 200919 Sep 2009

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excitons
temperature dependence
single crystals
radiative recombination
binding energy
quenching
dissociation
reflectance
photoluminescence
estimates
spectroscopy
excitation
temperature
energy

Keywords

  • single-crystals
  • photoluminescence
  • defect physics
  • optical-properties
  • chalcopyrite semiconductor

Cite this

Yakushev, M. V., Martin, R. W., Mudryi, A. V., Sadewasser, S. (Ed.), AbouRas, D. (Ed.), Lake, B. (Ed.), & Schock, HW. (Ed.) (2009). Temperature dependence of excitonic emission in CuInSe2. Physica Status Solidi C, 6(5), 1082-1085. https://doi.org/10.1002/pssc.200881155
Yakushev, M. V. ; Martin, R. W. ; Mudryi, A. V. ; Sadewasser, S (Editor) ; AbouRas, D (Editor) ; Lake, B (Editor) ; Schock, HW (Editor). / Temperature dependence of excitonic emission in CuInSe2. In: Physica Status Solidi C. 2009 ; Vol. 6, No. 5. pp. 1082-1085.
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abstract = "Radiative recombination processes in CuInSe2 (CIS) single crystals grown by the, vertical Bridgman technique were studied using photoluminescence (PL) and reflectance (RF) spectroscopies at temperatures from 4.2 to 60 K, and excitation intensity from 0.6 to 30 W/cm(2). Study of the quenching parameters of the A and B freeo and first three bound-excitons (M1, M2 and M3) in high-quality CuInSe2 single crystal leads to estimates for the binding energy of the A (7.7 meV) and B (7.9 meV) free excitons as well as dissociation energies for the M1, M2 and M3 bound-excitons.",
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Yakushev, MV, Martin, RW, Mudryi, AV, Sadewasser, S (ed.), AbouRas, D (ed.), Lake, B (ed.) & Schock, HW (ed.) 2009, 'Temperature dependence of excitonic emission in CuInSe2' Physica Status Solidi C, vol. 6, no. 5, pp. 1082-1085. https://doi.org/10.1002/pssc.200881155

Temperature dependence of excitonic emission in CuInSe2. / Yakushev, M. V.; Martin, R. W.; Mudryi, A. V.; Sadewasser, S (Editor); AbouRas, D (Editor); Lake, B (Editor); Schock, HW (Editor).

In: Physica Status Solidi C, Vol. 6, No. 5, 2009, p. 1082-1085.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Temperature dependence of excitonic emission in CuInSe2

AU - Yakushev, M. V.

AU - Martin, R. W.

AU - Mudryi, A. V.

A2 - Sadewasser, S

A2 - AbouRas, D

A2 - Lake, B

A2 - Schock, HW

N1 - Special Issue: 16th International Conference on Ternary and Multinary Compounds (ICTMC16)

PY - 2009

Y1 - 2009

N2 - Radiative recombination processes in CuInSe2 (CIS) single crystals grown by the, vertical Bridgman technique were studied using photoluminescence (PL) and reflectance (RF) spectroscopies at temperatures from 4.2 to 60 K, and excitation intensity from 0.6 to 30 W/cm(2). Study of the quenching parameters of the A and B freeo and first three bound-excitons (M1, M2 and M3) in high-quality CuInSe2 single crystal leads to estimates for the binding energy of the A (7.7 meV) and B (7.9 meV) free excitons as well as dissociation energies for the M1, M2 and M3 bound-excitons.

AB - Radiative recombination processes in CuInSe2 (CIS) single crystals grown by the, vertical Bridgman technique were studied using photoluminescence (PL) and reflectance (RF) spectroscopies at temperatures from 4.2 to 60 K, and excitation intensity from 0.6 to 30 W/cm(2). Study of the quenching parameters of the A and B freeo and first three bound-excitons (M1, M2 and M3) in high-quality CuInSe2 single crystal leads to estimates for the binding energy of the A (7.7 meV) and B (7.9 meV) free excitons as well as dissociation energies for the M1, M2 and M3 bound-excitons.

KW - single-crystals

KW - photoluminescence

KW - defect physics

KW - optical-properties

KW - chalcopyrite semiconductor

U2 - 10.1002/pssc.200881155

DO - 10.1002/pssc.200881155

M3 - Article

VL - 6

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Yakushev MV, Martin RW, Mudryi AV, Sadewasser S, (ed.), AbouRas D, (ed.), Lake B, (ed.) et al. Temperature dependence of excitonic emission in CuInSe2. Physica Status Solidi C. 2009;6(5):1082-1085. https://doi.org/10.1002/pssc.200881155