Tellurium n-type doping of highly mismatched amorphous GaN1-xAsx alloys in plasma-assisted molecular beam epitaxy

S. V. Novikov, M. Ting, K.M. Yu, W.L. Sarney, R.W. Martin, S.P. Svensson, W. Walukiewicz, C.T. Foxon

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Abstract

In this paper we report our study on n-type Te doping of amorphous GaNi1-xAsx layers grown by plasma assisted molecular beam epitaxy. We have used a low temperature PbTe source as a source of tellurium. Reproducible and uniform tellurium incorporation in amorphous GaNi1-xAsx layers has been successfully achieved with a maximum Te concentration of 9 x 10(20) cm(-3). Tellurium incorporation resulted in n-doping of GaN1-xAsx layers with Hall carrier concentrations up to 3 x 10(19) cm(-3) and mobilities of similar to 1 cm(2)/V s. The optimal growth temperature window for efficient Te doping of the amorphous GaNi1-xAsx layers has been determined.
Original languageEnglish
Pages (from-to)9-13
Number of pages5
JournalJournal of Crystal Growth
Volume404
Early online date30 Jun 2014
DOIs
Publication statusPublished - 15 Oct 2014

Keywords

  • GaNAs
  • GaN
  • tellurium

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