Tellurium n-type doping of highly mismatched amorphous GaN1-xAsx alloys in plasma-assisted molecular beam epitaxy

S. V. Novikov, M. Ting, K.M. Yu, W.L. Sarney, R.W. Martin, S.P. Svensson, W. Walukiewicz, C.T. Foxon

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

In this paper we report our study on n-type Te doping of amorphous GaNi1-xAsx layers grown by plasma assisted molecular beam epitaxy. We have used a low temperature PbTe source as a source of tellurium. Reproducible and uniform tellurium incorporation in amorphous GaNi1-xAsx layers has been successfully achieved with a maximum Te concentration of 9 x 10(20) cm(-3). Tellurium incorporation resulted in n-doping of GaN1-xAsx layers with Hall carrier concentrations up to 3 x 10(19) cm(-3) and mobilities of similar to 1 cm(2)/V s. The optimal growth temperature window for efficient Te doping of the amorphous GaNi1-xAsx layers has been determined.
LanguageEnglish
Pages9-13
Number of pages5
JournalJournal of Crystal Growth
Volume404
Early online date30 Jun 2014
DOIs
Publication statusPublished - 15 Oct 2014

Fingerprint

Tellurium
tellurium
Molecular beam epitaxy
molecular beam epitaxy
Doping (additives)
Plasmas
Growth temperature
Carrier concentration
Temperature
temperature

Keywords

  • GaNAs
  • GaN
  • tellurium

Cite this

Novikov, S. V. ; Ting, M. ; Yu, K.M. ; Sarney, W.L. ; Martin, R.W. ; Svensson, S.P. ; Walukiewicz, W. ; Foxon, C.T. / Tellurium n-type doping of highly mismatched amorphous GaN1-xAsx alloys in plasma-assisted molecular beam epitaxy. In: Journal of Crystal Growth. 2014 ; Vol. 404. pp. 9-13.
@article{7c62bc55391a4af5a1818f354eaeaf02,
title = "Tellurium n-type doping of highly mismatched amorphous GaN1-xAsx alloys in plasma-assisted molecular beam epitaxy",
abstract = "In this paper we report our study on n-type Te doping of amorphous GaNi1-xAsx layers grown by plasma assisted molecular beam epitaxy. We have used a low temperature PbTe source as a source of tellurium. Reproducible and uniform tellurium incorporation in amorphous GaNi1-xAsx layers has been successfully achieved with a maximum Te concentration of 9 x 10(20) cm(-3). Tellurium incorporation resulted in n-doping of GaN1-xAsx layers with Hall carrier concentrations up to 3 x 10(19) cm(-3) and mobilities of similar to 1 cm(2)/V s. The optimal growth temperature window for efficient Te doping of the amorphous GaNi1-xAsx layers has been determined.",
keywords = "GaNAs, GaN, tellurium",
author = "Novikov, {S. V.} and M. Ting and K.M. Yu and W.L. Sarney and R.W. Martin and S.P. Svensson and W. Walukiewicz and C.T. Foxon",
year = "2014",
month = "10",
day = "15",
doi = "10.1016/j.jcrysgro.2014.06.042",
language = "English",
volume = "404",
pages = "9--13",
journal = "Journal of Crystal Growth",
issn = "0022-0248",

}

Tellurium n-type doping of highly mismatched amorphous GaN1-xAsx alloys in plasma-assisted molecular beam epitaxy. / Novikov, S. V.; Ting, M.; Yu, K.M.; Sarney, W.L.; Martin, R.W.; Svensson, S.P.; Walukiewicz, W.; Foxon, C.T.

In: Journal of Crystal Growth, Vol. 404, 15.10.2014, p. 9-13.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Tellurium n-type doping of highly mismatched amorphous GaN1-xAsx alloys in plasma-assisted molecular beam epitaxy

AU - Novikov, S. V.

AU - Ting, M.

AU - Yu, K.M.

AU - Sarney, W.L.

AU - Martin, R.W.

AU - Svensson, S.P.

AU - Walukiewicz, W.

AU - Foxon, C.T.

PY - 2014/10/15

Y1 - 2014/10/15

N2 - In this paper we report our study on n-type Te doping of amorphous GaNi1-xAsx layers grown by plasma assisted molecular beam epitaxy. We have used a low temperature PbTe source as a source of tellurium. Reproducible and uniform tellurium incorporation in amorphous GaNi1-xAsx layers has been successfully achieved with a maximum Te concentration of 9 x 10(20) cm(-3). Tellurium incorporation resulted in n-doping of GaN1-xAsx layers with Hall carrier concentrations up to 3 x 10(19) cm(-3) and mobilities of similar to 1 cm(2)/V s. The optimal growth temperature window for efficient Te doping of the amorphous GaNi1-xAsx layers has been determined.

AB - In this paper we report our study on n-type Te doping of amorphous GaNi1-xAsx layers grown by plasma assisted molecular beam epitaxy. We have used a low temperature PbTe source as a source of tellurium. Reproducible and uniform tellurium incorporation in amorphous GaNi1-xAsx layers has been successfully achieved with a maximum Te concentration of 9 x 10(20) cm(-3). Tellurium incorporation resulted in n-doping of GaN1-xAsx layers with Hall carrier concentrations up to 3 x 10(19) cm(-3) and mobilities of similar to 1 cm(2)/V s. The optimal growth temperature window for efficient Te doping of the amorphous GaNi1-xAsx layers has been determined.

KW - GaNAs

KW - GaN

KW - tellurium

UR - http://www.sciencedirect.com/science/journal/00220248

U2 - 10.1016/j.jcrysgro.2014.06.042

DO - 10.1016/j.jcrysgro.2014.06.042

M3 - Article

VL - 404

SP - 9

EP - 13

JO - Journal of Crystal Growth

T2 - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

ER -