Synthesis and characterisation of new diindenothienothiophene (DITT) based materials

I. Afonina, P.J. Skabara, F. Vilela, A.L. Kanibolotsky, J.C. Forgie, Ashu K. Bansal, G. Turnbull, Ifor D. W. Samuel, John G. Labram, T.D. Anthopoulos, Simon J. Coles, M.B. Hursthouse

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Three new diindenothienothiophene (DITT) based materials were synthesised and their electrochemical properties investigated. The HOMO-LUMO gaps were observed to be 3.33, 3.48 and 2.81 eV, respectively. Cyclic voltammetry results indicate increased stability for the alkylated derivatives. The dioxide exhibits strong photoluminescence, giving a photoluminescence quantum yield of 0.72 in solution and 0.14 in the solid state. Hole mobility measurements were carried out on the non-alkylated derivative and the corresponding values were ~10-4 cm2 V-1 s-1.
Original languageEnglish
Pages (from-to)1112-1116
Number of pages5
JournalJournal of Materials Chemistry
Issue number6
Publication statusPublished - 2010


  • diindenothienothiophene
  • electrochemical properties
  • synthesised materials
  • DITT


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