Suspension and transfer printing of ZnCdMgSe membranes from an InP substrate

Research output: Contribution to journalArticle

Abstract

Wide bandgap II-VI semiconductors, lattice-matched to InP substrates, show promise for use in novel, visible wavelength photonic devices; however, release layers for substrate removal are still under development. An under-etch method is reported which uses an InP substrate as an effective release layer for the epitaxial lift-off of lattice-matched ZnCdMgSe membranes. An array of 100-µm-square membranes is defined on a ZnCdMgSe surface using dry etching and suspended from the InP substrate using a three-step wet etch. The ZnCdMgSe membranes are transfer-printed onto a diamond heatspreader and have an RMS surface roughness < 2 nm over 400 µm2, similar to the epitaxial surface. Membranes on diamond show a photoluminescence peak at ~520 nm and a thermal redshift of 4 nm with ~3.6 MWm-2 continuous optical pumping at 447 nm. Effective strain management during the process is demonstrated by the absence of cracks or visible membrane bowing and the high brightness photoluminescence indicates a minimal non-radiative defect introduction. The methodology presented will enable the heterogeneous integration and miniaturization of II-VI membrane devices.
Original languageEnglish
Pages (from-to)3328-3341
Number of pages14
JournalOptical Materials Express
Volume10
Issue number12
Early online date19 Nov 2020
DOIs
Publication statusE-pub ahead of print - 19 Nov 2020

Keywords

  • II-VI semiconductors
  • InP
  • heterogeneous integration
  • transfer printing
  • epitaxial lift-off

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