Surface second harmonic generation in the characterization of anodic sulphide and oxide films on Hg1-xCdxTe (MCT)

L.E.A. Berlouis, A.W. Wark, F.R. Cruickshank, David Pugh, Pierre-Francois Brevet

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Rotation anisotropy by second harmonic generation (SHG) is carried out on epitaxial Hg1−xCdxTe (MCT) and oxide- and sulphide-covered MCT surfaces and shows the fourfold symmetry pattern expected from the {100} surface (C4v symmetry). The uneven nature of the four peaks confirm the vicinal surface obtained from the growth of the MCT on GaAs {100} substrate orientated 4° toward the 〈110〉 direction. The increase in the SH intensity observed for the oxide-covered MCT surface is associated with charge accumulation at the MCT/oxide interface since the oxide is centrosymmetric and cannot generate SH. The CdS layer on the other hand is strongly nonlinear active and generation here comes from a composite of one noncentrosymmetric layer on top of another. This leads to interactions in the observed SH arising from the coupling depths (∼40 nm) at the two interfaces and from the coherence length (∼1200 nm) in the CdS layer. The in-situ SHG measurements during the growth of the anodic oxide and sulphide layers would suggest that a species, most likely HgTe is embedded in the anodic layer during the initial stages and absorbs the SH radiation at 532 nm. The rotational anisotropy of the sulphide-covered MCT surface confirms that the CdS layer formed maintains the cubic closed pack symmetry of the underlying MCT.
LanguageEnglish
Pages830-837
Number of pages8
JournalJournal of Electronic Materials
Volume28
Issue number6
DOIs
Publication statusPublished - 1999

Fingerprint

Sulfides
Harmonic generation
Oxides
Oxide films
oxide films
sulfides
harmonic generations
oxides
Anisotropy
symmetry
Growth
anisotropy
Radiation
Composite materials
Substrates
composite materials
radiation
interactions

Keywords

  • surface second harmonic generation
  • characterization
  • oxide films
  • Hg1−xCdxTe (MCT)
  • anodic sulphide

Cite this

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title = "Surface second harmonic generation in the characterization of anodic sulphide and oxide films on Hg1-xCdxTe (MCT)",
abstract = "Rotation anisotropy by second harmonic generation (SHG) is carried out on epitaxial Hg1−xCdxTe (MCT) and oxide- and sulphide-covered MCT surfaces and shows the fourfold symmetry pattern expected from the {100} surface (C4v symmetry). The uneven nature of the four peaks confirm the vicinal surface obtained from the growth of the MCT on GaAs {100} substrate orientated 4° toward the 〈110〉 direction. The increase in the SH intensity observed for the oxide-covered MCT surface is associated with charge accumulation at the MCT/oxide interface since the oxide is centrosymmetric and cannot generate SH. The CdS layer on the other hand is strongly nonlinear active and generation here comes from a composite of one noncentrosymmetric layer on top of another. This leads to interactions in the observed SH arising from the coupling depths (∼40 nm) at the two interfaces and from the coherence length (∼1200 nm) in the CdS layer. The in-situ SHG measurements during the growth of the anodic oxide and sulphide layers would suggest that a species, most likely HgTe is embedded in the anodic layer during the initial stages and absorbs the SH radiation at 532 nm. The rotational anisotropy of the sulphide-covered MCT surface confirms that the CdS layer formed maintains the cubic closed pack symmetry of the underlying MCT.",
keywords = "surface second harmonic generation, characterization, oxide films, Hg1−xCdxTe (MCT), anodic sulphide",
author = "L.E.A. Berlouis and A.W. Wark and F.R. Cruickshank and David Pugh and Pierre-Francois Brevet",
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Surface second harmonic generation in the characterization of anodic sulphide and oxide films on Hg1-xCdxTe (MCT). / Berlouis, L.E.A.; Wark, A.W.; Cruickshank, F.R.; Pugh, David; Brevet, Pierre-Francois.

In: Journal of Electronic Materials , Vol. 28, No. 6, 1999, p. 830-837.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Surface second harmonic generation in the characterization of anodic sulphide and oxide films on Hg1-xCdxTe (MCT)

AU - Berlouis, L.E.A.

AU - Wark, A.W.

AU - Cruickshank, F.R.

AU - Pugh, David

AU - Brevet, Pierre-Francois

PY - 1999

Y1 - 1999

N2 - Rotation anisotropy by second harmonic generation (SHG) is carried out on epitaxial Hg1−xCdxTe (MCT) and oxide- and sulphide-covered MCT surfaces and shows the fourfold symmetry pattern expected from the {100} surface (C4v symmetry). The uneven nature of the four peaks confirm the vicinal surface obtained from the growth of the MCT on GaAs {100} substrate orientated 4° toward the 〈110〉 direction. The increase in the SH intensity observed for the oxide-covered MCT surface is associated with charge accumulation at the MCT/oxide interface since the oxide is centrosymmetric and cannot generate SH. The CdS layer on the other hand is strongly nonlinear active and generation here comes from a composite of one noncentrosymmetric layer on top of another. This leads to interactions in the observed SH arising from the coupling depths (∼40 nm) at the two interfaces and from the coherence length (∼1200 nm) in the CdS layer. The in-situ SHG measurements during the growth of the anodic oxide and sulphide layers would suggest that a species, most likely HgTe is embedded in the anodic layer during the initial stages and absorbs the SH radiation at 532 nm. The rotational anisotropy of the sulphide-covered MCT surface confirms that the CdS layer formed maintains the cubic closed pack symmetry of the underlying MCT.

AB - Rotation anisotropy by second harmonic generation (SHG) is carried out on epitaxial Hg1−xCdxTe (MCT) and oxide- and sulphide-covered MCT surfaces and shows the fourfold symmetry pattern expected from the {100} surface (C4v symmetry). The uneven nature of the four peaks confirm the vicinal surface obtained from the growth of the MCT on GaAs {100} substrate orientated 4° toward the 〈110〉 direction. The increase in the SH intensity observed for the oxide-covered MCT surface is associated with charge accumulation at the MCT/oxide interface since the oxide is centrosymmetric and cannot generate SH. The CdS layer on the other hand is strongly nonlinear active and generation here comes from a composite of one noncentrosymmetric layer on top of another. This leads to interactions in the observed SH arising from the coupling depths (∼40 nm) at the two interfaces and from the coherence length (∼1200 nm) in the CdS layer. The in-situ SHG measurements during the growth of the anodic oxide and sulphide layers would suggest that a species, most likely HgTe is embedded in the anodic layer during the initial stages and absorbs the SH radiation at 532 nm. The rotational anisotropy of the sulphide-covered MCT surface confirms that the CdS layer formed maintains the cubic closed pack symmetry of the underlying MCT.

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KW - characterization

KW - oxide films

KW - Hg1−xCdxTe (MCT)

KW - anodic sulphide

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DO - 10.1007/s11664-999-0079-x

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