Surface properties of GaN fabricated by laser lift-off and ICP etching

Hyeon-Soo Kim, M.D. Dawson, Geun-Young Yeom

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In this report, we describe the surface properties of a controlled thickness GaN microcavity which incorporates Zr2O3/SiO2 DBR stacks for both the bottom and the top mirrors. The GaN microcavities were fabricated using laser lift-off and inductively coupled plasma etching. We also compared etch rates, surface composition, and surface roughness between grown GaN and GaN fabricated by laser lift-off and ICP etching.
Original languageEnglish
Pages (from-to)567-571
Number of pages4
JournalNew Physics: Korean Physical Society
Issue number4
Publication statusPublished - Apr 2002


  • GaN
  • laser lift-off
  • ICP etching

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