Surface properties of GaN fabricated by laser lift-off and ICP etching

Hyeon-Soo Kim, M.D. Dawson, Geun-Young Yeom

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

In this report, we describe the surface properties of a controlled thickness GaN microcavity which incorporates Zr2O3/SiO2 DBR stacks for both the bottom and the top mirrors. The GaN microcavities were fabricated using laser lift-off and inductively coupled plasma etching. We also compared etch rates, surface composition, and surface roughness between grown GaN and GaN fabricated by laser lift-off and ICP etching.
LanguageEnglish
Pages567-571
Number of pages4
JournalNew Physics: Korean Physical Society
Volume40
Issue number4
DOIs
Publication statusPublished - Apr 2002

Fingerprint

surface properties
etching
plasma etching
lasers
surface roughness
mirrors

Keywords

  • GaN
  • laser lift-off
  • ICP etching
  • VCSEL

Cite this

@article{993e2e0d8fba47da93974a50c58dda0c,
title = "Surface properties of GaN fabricated by laser lift-off and ICP etching",
abstract = "In this report, we describe the surface properties of a controlled thickness GaN microcavity which incorporates Zr2O3/SiO2 DBR stacks for both the bottom and the top mirrors. The GaN microcavities were fabricated using laser lift-off and inductively coupled plasma etching. We also compared etch rates, surface composition, and surface roughness between grown GaN and GaN fabricated by laser lift-off and ICP etching.",
keywords = "GaN, laser lift-off, ICP etching, VCSEL",
author = "Hyeon-Soo Kim and M.D. Dawson and Geun-Young Yeom",
year = "2002",
month = "4",
doi = "10.3938/jkps.40.567",
language = "English",
volume = "40",
pages = "567--571",
journal = "New Physics: Korean Physical Society",
issn = "0374-4914",
publisher = "Korean Physical Society",
number = "4",

}

Surface properties of GaN fabricated by laser lift-off and ICP etching. / Kim, Hyeon-Soo; Dawson, M.D.; Yeom, Geun-Young.

In: New Physics: Korean Physical Society, Vol. 40, No. 4, 04.2002, p. 567-571.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Surface properties of GaN fabricated by laser lift-off and ICP etching

AU - Kim, Hyeon-Soo

AU - Dawson, M.D.

AU - Yeom, Geun-Young

PY - 2002/4

Y1 - 2002/4

N2 - In this report, we describe the surface properties of a controlled thickness GaN microcavity which incorporates Zr2O3/SiO2 DBR stacks for both the bottom and the top mirrors. The GaN microcavities were fabricated using laser lift-off and inductively coupled plasma etching. We also compared etch rates, surface composition, and surface roughness between grown GaN and GaN fabricated by laser lift-off and ICP etching.

AB - In this report, we describe the surface properties of a controlled thickness GaN microcavity which incorporates Zr2O3/SiO2 DBR stacks for both the bottom and the top mirrors. The GaN microcavities were fabricated using laser lift-off and inductively coupled plasma etching. We also compared etch rates, surface composition, and surface roughness between grown GaN and GaN fabricated by laser lift-off and ICP etching.

KW - GaN

KW - laser lift-off

KW - ICP etching

KW - VCSEL

UR - http://dx.doi.org/10.3938/jkps.40.567

U2 - 10.3938/jkps.40.567

DO - 10.3938/jkps.40.567

M3 - Article

VL - 40

SP - 567

EP - 571

JO - New Physics: Korean Physical Society

T2 - New Physics: Korean Physical Society

JF - New Physics: Korean Physical Society

SN - 0374-4914

IS - 4

ER -