In this report, we describe the surface properties of a controlled thickness GaN microcavity which incorporates Zr2O3/SiO2 DBR stacks for both the bottom and the top mirrors. The GaN microcavities were fabricated using laser lift-off and inductively coupled plasma etching. We also compared etch rates, surface composition, and surface roughness between grown GaN and GaN fabricated by laser lift-off and ICP etching.
|Number of pages||4|
|Journal||New Physics: Korean Physical Society|
|Publication status||Published - Apr 2002|
- laser lift-off
- ICP etching