In this report, we describe the surface properties of a controlled thickness GaN microcavity which incorporates Zr2O3/SiO2 DBR stacks for both the bottom and the top mirrors. The GaN microcavities were fabricated using laser lift-off and inductively coupled plasma etching. We also compared etch rates, surface composition, and surface roughness between grown GaN and GaN fabricated by laser lift-off and ICP etching.
- laser lift-off
- ICP etching
Kim, H-S., Dawson, M. D., & Yeom, G-Y. (2002). Surface properties of GaN fabricated by laser lift-off and ICP etching. New Physics: Korean Physical Society, 40(4), 567-571. https://doi.org/10.3938/jkps.40.567