Surface-engineered silicon nanocrystals

Calum McDonald, Tamilselvan Velusamy, Davide Mariotti, Vladimir Svrcek

Research output: Chapter in Book/Report/Conference proceedingChapter

1 Citation (Scopus)

Abstract

This chapter outlines that the SiNC properties are strongly dependent on the surface, and methods to modify surface terminations. It discusses freestanding SiNCs, where "freestanding" refers to unsupported SiNCs which are neither grown within a solid matrix nor on a solid substrate. Freestanding SiNCs refer to Nano crystals which are produced in liquid/gas phases or have been released from solid matrices, and are preferential for studies regarding surface engineering due to the ease of access to their surfaces. The chapter concerns with the surface engineering of SiNCs. It focuses on freestanding Nano crystals and on the surface engineering in ethanol and water. A chemically active surface is required for plasma—liquid surface engineering; for example, Si—H, Si—OH, Si—Cl terminations, and the starting surface termination can determine the type of engineering achieved. The chapter discusses both direct-current (DC) and ultrahigh frequency (UHF) methods of micro plasma-induced surface engineering.
Original languageEnglish
Title of host publicationSilicon Nanomaterials Sourcebook
Subtitle of host publicationLow-Dimensional Structures, Quantum Dots, and Nanowires
EditorsKlaus D. Sattler
Place of PublicationBoca Raton, FL
Chapter14
Pages323-340
Number of pages18
Volume1
ISBN (Electronic)9781315153544
DOIs
Publication statusPublished - 2 Aug 2017

Keywords

  • SiNC
  • silicon nanocrystals
  • surface engineering
  • micro plasma-induced surface engineering
  • silicon nanomaterials

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