Sub-micron lithography using InGaN micro-LEDs: mask-free fabrication of LED arrays

Benoit Jack Eloi Guilhabert, David Massoubre, Elliot Richardson, Jonathan McKendry, Gareth Valentine, Robert Henderson, Ian Watson, Erdan Gu, Martin Dawson

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

The fabrication of gallium-nitride (GaN)-based light-emitting diode (LED) arrays by a direct writing technique, itself using micron-sized LEDs (micro-LEDs), is reported. CMOSdriven ultraviolet GaN-based micro-LED arrays are used to pattern photoresist layers with feature sizes as small as 500 nm. Checkerboard-type square LED array devices are then fabricated using such photoresist patterns based on either single pixel or multipixel direct writing, and implemented as part of a completely mask-less process flow. These exemplar arrays are composed of either 450-nm-emitting 199 × 199 μm2 pixels on a 200-μm pitch or 520-nm-emitting 21 × 18 μm2 pixels on a 23-μm
pitch. Fill factors of 99% and 71.5% are achieved with optical output power densities per pixel of 5 and 20 W/cm2 at 90- and 6-mA dc-injected currents, respectively.
LanguageEnglish
Pages2221-2224
Number of pages4
JournalIEEE Photonics Technology Letters
Volume24
Issue number24
Early online date18 Oct 2012
DOIs
Publication statusPublished - 15 Dec 2012

Fingerprint

Lithography
Light emitting diodes
Masks
light emitting diodes
masks
lithography
Pixels
pixels
Fabrication
Gallium nitride
fabrication
gallium nitrides
Photoresists
photoresists
radiant flux density
output
gallium nitride

Keywords

  • Gallium nitride
  • micro LEDs
  • nanolithography
  • semiconductor device manufacture

Cite this

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abstract = "The fabrication of gallium-nitride (GaN)-based light-emitting diode (LED) arrays by a direct writing technique, itself using micron-sized LEDs (micro-LEDs), is reported. CMOSdriven ultraviolet GaN-based micro-LED arrays are used to pattern photoresist layers with feature sizes as small as 500 nm. Checkerboard-type square LED array devices are then fabricated using such photoresist patterns based on either single pixel or multipixel direct writing, and implemented as part of a completely mask-less process flow. These exemplar arrays are composed of either 450-nm-emitting 199 × 199 μm2 pixels on a 200-μm pitch or 520-nm-emitting 21 × 18 μm2 pixels on a 23-μmpitch. Fill factors of 99{\%} and 71.5{\%} are achieved with optical output power densities per pixel of 5 and 20 W/cm2 at 90- and 6-mA dc-injected currents, respectively.",
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Sub-micron lithography using InGaN micro-LEDs : mask-free fabrication of LED arrays. / Guilhabert, Benoit Jack Eloi; Massoubre, David; Richardson, Elliot; McKendry, Jonathan; Valentine, Gareth; Henderson, Robert; Watson, Ian; Gu, Erdan; Dawson, Martin.

In: IEEE Photonics Technology Letters, Vol. 24, No. 24, 15.12.2012, p. 2221-2224.

Research output: Contribution to journalArticle

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AU - Gu, Erdan

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