Sub-micron lithography using InGaN micro-LEDs: mask-free fabrication of LED arrays

Benoit Jack Eloi Guilhabert, David Massoubre, Elliot Richardson, Jonathan McKendry, Gareth Valentine, Robert Henderson, Ian Watson, Erdan Gu, Martin Dawson

Research output: Contribution to journalArticlepeer-review

19 Citations (Scopus)


The fabrication of gallium-nitride (GaN)-based light-emitting diode (LED) arrays by a direct writing technique, itself using micron-sized LEDs (micro-LEDs), is reported. CMOSdriven ultraviolet GaN-based micro-LED arrays are used to pattern photoresist layers with feature sizes as small as 500 nm. Checkerboard-type square LED array devices are then fabricated using such photoresist patterns based on either single pixel or multipixel direct writing, and implemented as part of a completely mask-less process flow. These exemplar arrays are composed of either 450-nm-emitting 199 × 199 μm2 pixels on a 200-μm pitch or 520-nm-emitting 21 × 18 μm2 pixels on a 23-μm
pitch. Fill factors of 99% and 71.5% are achieved with optical output power densities per pixel of 5 and 20 W/cm2 at 90- and 6-mA dc-injected currents, respectively.
Original languageEnglish
Pages (from-to)2221-2224
Number of pages4
JournalIEEE Photonics Technology Letters
Issue number24
Early online date18 Oct 2012
Publication statusPublished - 15 Dec 2012


  • Gallium nitride
  • micro LEDs
  • nanolithography
  • semiconductor device manufacture

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