Sub-micron inGaN ring structures for high-efficiency LEDs

H.W. Choi; P.R. Edwards; C. Liu; C.W. Jeon; R.W. Martin; I.M. Watson; M.D. Dawson; P. Tripathy; S.J. Chua

doi:10.1002/pssc.200303910

Sub-micron inGaN ring structures for high-efficiency LEDs

H.W. Choi, P.R. Edwards, C. Liu, C.W. Jeon, R.W. Martin, I.M. Watson, M.D. Dawson, P. Tripathy, S.J. Chua

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

A novel technique based on the Fresnel diffraction effect for the fabrication of sub-micron ring structures in InGaN/GaN multi-quantum well structures has been demonstrated. The ring structures have an external diameter of 1.5 m and a wall width of 500 nm. A 1 cm-1 Raman shift has been measured, signifying substantial strain relaxation from the fabricated structure. The 5 nm blue shift observed in the cathodoluminescence spectra can be attributed to band-filling and/or screening of the piezoelectric field. A light emitting diode based on this geometry has been demonstrated.

Original language	English
Pages (from-to)	202-205
Number of pages	3
Journal	Physica Status Solidi C
Volume	1
Issue number	2
DOIs	https://doi.org/10.1002/pssc.200303910
Publication status	Published - 2004

Keywords

light-emitting-diodes
gan
sub-micron ring structures
cathodoluminescence

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10.1002/pssc.200303910

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title = "Sub-micron inGaN ring structures for high-efficiency LEDs",

abstract = "A novel technique based on the Fresnel diffraction effect for the fabrication of sub-micron ring structures in InGaN/GaN multi-quantum well structures has been demonstrated. The ring structures have an external diameter of 1.5 m and a wall width of 500 nm. A 1 cm-1 Raman shift has been measured, signifying substantial strain relaxation from the fabricated structure. The 5 nm blue shift observed in the cathodoluminescence spectra can be attributed to band-filling and/or screening of the piezoelectric field. A light emitting diode based on this geometry has been demonstrated.",

keywords = "light-emitting-diodes, gan, sub-micron ring structures, cathodoluminescence",

author = "H.W. Choi and P.R. Edwards and C. Liu and C.W. Jeon and R.W. Martin and I.M. Watson and M.D. Dawson and P. Tripathy and S.J. Chua",

year = "2004",

doi = "10.1002/pssc.200303910",

language = "English",

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pages = "202--205",

journal = "Physica Status Solidi C",

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TY - JOUR

T1 - Sub-micron inGaN ring structures for high-efficiency LEDs

AU - Choi, H.W.

AU - Edwards, P.R.

AU - Liu, C.

AU - Jeon, C.W.

AU - Martin, R.W.

AU - Watson, I.M.

AU - Dawson, M.D.

AU - Tripathy, P.

AU - Chua, S.J.

PY - 2004

Y1 - 2004

N2 - A novel technique based on the Fresnel diffraction effect for the fabrication of sub-micron ring structures in InGaN/GaN multi-quantum well structures has been demonstrated. The ring structures have an external diameter of 1.5 m and a wall width of 500 nm. A 1 cm-1 Raman shift has been measured, signifying substantial strain relaxation from the fabricated structure. The 5 nm blue shift observed in the cathodoluminescence spectra can be attributed to band-filling and/or screening of the piezoelectric field. A light emitting diode based on this geometry has been demonstrated.

AB - A novel technique based on the Fresnel diffraction effect for the fabrication of sub-micron ring structures in InGaN/GaN multi-quantum well structures has been demonstrated. The ring structures have an external diameter of 1.5 m and a wall width of 500 nm. A 1 cm-1 Raman shift has been measured, signifying substantial strain relaxation from the fabricated structure. The 5 nm blue shift observed in the cathodoluminescence spectra can be attributed to band-filling and/or screening of the piezoelectric field. A light emitting diode based on this geometry has been demonstrated.

KW - light-emitting-diodes

KW - gan

KW - sub-micron ring structures

KW - cathodoluminescence

UR - http://www.science24.com/event/emrs2003fall/journal/?item=1C

UR - http://dx.doi.org/10.1002/pssc.200303910

U2 - 10.1002/pssc.200303910

DO - 10.1002/pssc.200303910

M3 - Article

SN - 1862-6351

VL - 1

SP - 202

EP - 205

JO - Physica Status Solidi C

JF - Physica Status Solidi C

IS - 2

ER -

Sub-micron inGaN ring structures for high-efficiency LEDs

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Keywords

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