Sub-micron inGaN ring structures for high-efficiency LEDs

H.W. Choi, P.R. Edwards, C. Liu, C.W. Jeon, R.W. Martin, I.M. Watson, M.D. Dawson, P. Tripathy, S.J. Chua

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


A novel technique based on the Fresnel diffraction effect for the fabrication of sub-micron ring structures in InGaN/GaN multi-quantum well structures has been demonstrated. The ring structures have an external diameter of 1.5 m and a wall width of 500 nm. A 1 cm-1 Raman shift has been measured, signifying substantial strain relaxation from the fabricated structure. The 5 nm blue shift observed in the cathodoluminescence spectra can be attributed to band-filling and/or screening of the piezoelectric field. A light emitting diode based on this geometry has been demonstrated.
Original languageEnglish
Pages (from-to)202-205
Number of pages3
JournalPhysica Status Solidi C
Issue number2
Publication statusPublished - 2004


  • light-emitting-diodes
  • gan
  • sub-micron ring structures
  • cathodoluminescence

Cite this