Structure and electrical activity of rare-earth dopants in selected III-Vs

J.-S. Filhol, S. Petit, R. Jones, B. Hourahine, Th. Frauenheim, H. Overhof, J. Coutinho, M. J. Shaw, P. R. Briddon, S. Öberg

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Density functional theory is used to investigate Eu, Er and Tm rare earth (RE) impurities in GaAs, GaN and AlN. The most stable site is when the RE is located at a group III substitutional site but in GaN and GaAs these defects do not then possess any gap levels, unlike AlN. RE-VN defects in GaN are shown to possess levels which could act as traps for excitons. The interaction of oxygen with substitutional REs is also considered.
LanguageEnglish
Article numberY5.3
JournalMRS Online Proceedings Library
Volume798
DOIs
Publication statusPublished - 31 Jan 2003

Fingerprint

Rare earths
rare earth elements
Doping (additives)
Defects
defects
Excitons
Density functional theory
excitons
traps
Impurities
Oxygen
density functional theory
impurities
oxygen
interactions
gallium arsenide
LDS 751

Keywords

  • structure
  • electrical activity
  • rare-earth dopants
  • defects
  • oxygen

Cite this

Filhol, J-S., Petit, S., Jones, R., Hourahine, B., Frauenheim, T., Overhof, H., ... Öberg, S. (2003). Structure and electrical activity of rare-earth dopants in selected III-Vs. MRS Online Proceedings Library , 798, [Y5.3]. https://doi.org/10.1557/PROC-798-Y5.3
Filhol, J.-S. ; Petit, S. ; Jones, R. ; Hourahine, B. ; Frauenheim, Th. ; Overhof, H. ; Coutinho, J. ; Shaw, M. J. ; Briddon, P. R. ; Öberg, S. / Structure and electrical activity of rare-earth dopants in selected III-Vs. In: MRS Online Proceedings Library . 2003 ; Vol. 798.
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Filhol, J-S, Petit, S, Jones, R, Hourahine, B, Frauenheim, T, Overhof, H, Coutinho, J, Shaw, MJ, Briddon, PR & Öberg, S 2003, 'Structure and electrical activity of rare-earth dopants in selected III-Vs' MRS Online Proceedings Library , vol. 798, Y5.3. https://doi.org/10.1557/PROC-798-Y5.3

Structure and electrical activity of rare-earth dopants in selected III-Vs. / Filhol, J.-S.; Petit, S.; Jones, R.; Hourahine, B.; Frauenheim, Th.; Overhof, H.; Coutinho, J.; Shaw, M. J.; Briddon, P. R.; Öberg, S.

In: MRS Online Proceedings Library , Vol. 798, Y5.3, 31.01.2003.

Research output: Contribution to journalArticle

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T1 - Structure and electrical activity of rare-earth dopants in selected III-Vs

AU - Filhol, J.-S.

AU - Petit, S.

AU - Jones, R.

AU - Hourahine, B.

AU - Frauenheim, Th.

AU - Overhof, H.

AU - Coutinho, J.

AU - Shaw, M. J.

AU - Briddon, P. R.

AU - Öberg, S.

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AB - Density functional theory is used to investigate Eu, Er and Tm rare earth (RE) impurities in GaAs, GaN and AlN. The most stable site is when the RE is located at a group III substitutional site but in GaN and GaAs these defects do not then possess any gap levels, unlike AlN. RE-VN defects in GaN are shown to possess levels which could act as traps for excitons. The interaction of oxygen with substitutional REs is also considered.

KW - structure

KW - electrical activity

KW - rare-earth dopants

KW - defects

KW - oxygen

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DO - 10.1557/PROC-798-Y5.3

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