Structure and electrical activity of rare-earth dopants in selected III-Vs

J.-S. Filhol; S. Petit; R. Jones; B. Hourahine; Th. Frauenheim; H. Overhof; J. Coutinho; M. J. Shaw; P. R. Briddon; S. Öberg

doi:10.1557/PROC-798-Y5.3

Structure and electrical activity of rare-earth dopants in selected III-Vs

J.-S. Filhol, S. Petit, R. Jones, B. Hourahine, Th. Frauenheim, H. Overhof, J. Coutinho, M. J. Shaw, P. R. Briddon, S. Öberg

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Density functional theory is used to investigate Eu, Er and Tm rare earth (RE) impurities in GaAs, GaN and AlN. The most stable site is when the RE is located at a group III substitutional site but in GaN and GaAs these defects do not then possess any gap levels, unlike AlN. RE-VN defects in GaN are shown to possess levels which could act as traps for excitons. The interaction of oxygen with substitutional REs is also considered.

Original language	English
Article number	Y5.3
Journal	MRS Online Proceedings Library
Volume	798
DOIs	https://doi.org/10.1557/PROC-798-Y5.3
Publication status	Published - 31 Jan 2003

Keywords

structure
electrical activity
rare-earth dopants
defects
oxygen

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10.1557/PROC-798-Y5.3

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title = "Structure and electrical activity of rare-earth dopants in selected III-Vs",

abstract = "Density functional theory is used to investigate Eu, Er and Tm rare earth (RE) impurities in GaAs, GaN and AlN. The most stable site is when the RE is located at a group III substitutional site but in GaN and GaAs these defects do not then possess any gap levels, unlike AlN. RE-VN defects in GaN are shown to possess levels which could act as traps for excitons. The interaction of oxygen with substitutional REs is also considered.",

keywords = "structure, electrical activity, rare-earth dopants, defects, oxygen",

author = "J.-S. Filhol and S. Petit and R. Jones and B. Hourahine and Th. Frauenheim and H. Overhof and J. Coutinho and Shaw, {M. J.} and Briddon, {P. R.} and S. {\"O}berg",

year = "2003",

month = jan,

day = "31",

doi = "10.1557/PROC-798-Y5.3",

language = "English",

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journal = "MRS Online Proceedings Library ",

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TY - JOUR

T1 - Structure and electrical activity of rare-earth dopants in selected III-Vs

AU - Filhol, J.-S.

AU - Petit, S.

AU - Jones, R.

AU - Hourahine, B.

AU - Frauenheim, Th.

AU - Overhof, H.

AU - Coutinho, J.

AU - Shaw, M. J.

AU - Briddon, P. R.

AU - Öberg, S.

PY - 2003/1/31

Y1 - 2003/1/31

N2 - Density functional theory is used to investigate Eu, Er and Tm rare earth (RE) impurities in GaAs, GaN and AlN. The most stable site is when the RE is located at a group III substitutional site but in GaN and GaAs these defects do not then possess any gap levels, unlike AlN. RE-VN defects in GaN are shown to possess levels which could act as traps for excitons. The interaction of oxygen with substitutional REs is also considered.

AB - Density functional theory is used to investigate Eu, Er and Tm rare earth (RE) impurities in GaAs, GaN and AlN. The most stable site is when the RE is located at a group III substitutional site but in GaN and GaAs these defects do not then possess any gap levels, unlike AlN. RE-VN defects in GaN are shown to possess levels which could act as traps for excitons. The interaction of oxygen with substitutional REs is also considered.

KW - structure

KW - electrical activity

KW - rare-earth dopants

KW - defects

KW - oxygen

U2 - 10.1557/PROC-798-Y5.3

DO - 10.1557/PROC-798-Y5.3

M3 - Article

SN - 1946-4274

VL - 798

JO - MRS Online Proceedings Library

JF - MRS Online Proceedings Library

M1 - Y5.3

ER -

Structure and electrical activity of rare-earth dopants in selected III-Vs

Abstract

Keywords

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