Structure and electrical activity of rare-earth dopants in selected III-Vs

J.-S. Filhol, S. Petit, R. Jones, B. Hourahine, Th. Frauenheim, H. Overhof, J. Coutinho, M. J. Shaw, P. R. Briddon, S. Öberg

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Density functional theory is used to investigate Eu, Er and Tm rare earth (RE) impurities in GaAs, GaN and AlN. The most stable site is when the RE is located at a group III substitutional site but in GaN and GaAs these defects do not then possess any gap levels, unlike AlN. RE-VN defects in GaN are shown to possess levels which could act as traps for excitons. The interaction of oxygen with substitutional REs is also considered.
Original languageEnglish
Article numberY5.3
JournalMRS Online Proceedings Library
Volume798
DOIs
Publication statusPublished - 31 Jan 2003

Keywords

  • structure
  • electrical activity
  • rare-earth dopants
  • defects
  • oxygen

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