Abstract
We present a simple and powerful two-photon fluorescence imaging technique for noninvasive spatial evaluation of the gallium nitride (GaN) based structure deep within a micro-
LED array. The GaN based heterostructure was excited via two-photon absorption and the resulting fluorescence was used to generate optical sections and three-dimensional
representations of the active medium within the sample. Furthermore, by supplying current to the sample while imaging, this method was found to permit simple quantitative measurements of the operational and emission characteristics of the device.
Original language | English |
---|---|
Publication status | Unpublished - 16 Apr 2003 |
Event | Focus on Microscopy - Genova, Italy Duration: 13 Apr 2003 → 16 Apr 2003 |
Conference
Conference | Focus on Microscopy |
---|---|
City | Genova, Italy |
Period | 13/04/03 → 16/04/03 |
Keywords
- two-photon excitation
- optical sectioning
- gallium nitride
- microstructure