Structural and optical properties of thin films of Cu(In,Ga)Se-2 semiconductor compounds

A. V. Mudryi; V. F. Gremenok; A. V. Karotki; V. B. Zalesski; M. V. Yakushev; F. Luckert; R. Martin

doi:10.1007/s10812-010-9341-5

Structural and optical properties of thin films of Cu(In,Ga)Se-2 semiconductor compounds

A. V. Mudryi, V. F. Gremenok, A. V. Karotki, V. B. Zalesski, M. V. Yakushev, F. Luckert, R. Martin

Research output: Contribution to journal › Article › peer-review

31 Citations (Scopus)

Abstract

The chemical composition of Cu(In,Ga)Se-2 (CIGS) semiconductor compounds is analyzed by local x-ray spectral microanalysis and scanning Auger electron spectroscopy. X-ray diffraction analysis reveals a difference in the predominant orientation of CIGS films depending on the technological conditions under which they are grown. The chemical composition is found to have a strong effect on the shift in the self-absorption edge of CIGS compounds. It is shown that a change in the relative proportion of Ga and In in CIGS semiconducting compounds leads to a change in the band gap E-g for this material in the 1.05-1.72 eV spectral range at 4.2 K.

Original language	English
Pages (from-to)	371-377
Number of pages	7
Journal	Journal of Applied Spectroscopy
Volume	77
Issue number	3
DOIs	https://doi.org/10.1007/s10812-010-9341-5
Publication status	Published - Jul 2010

Keywords

chalcopyrite semiconductors
chemical composition
absorption coefficient
x-ray diffraction analysis
structure
CUINSE2 SINGLE-CRYSTALS
solar-cells
epitaxial layers
CUIN1-XGAXSE2
quality
photoreflectance
performance
efficiency

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10.1007/s10812-010-9341-5

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@article{ff81e3ab59084602a496f826630aac2c,

title = "Structural and optical properties of thin films of Cu(In,Ga)Se-2 semiconductor compounds",

abstract = "The chemical composition of Cu(In,Ga)Se-2 (CIGS) semiconductor compounds is analyzed by local x-ray spectral microanalysis and scanning Auger electron spectroscopy. X-ray diffraction analysis reveals a difference in the predominant orientation of CIGS films depending on the technological conditions under which they are grown. The chemical composition is found to have a strong effect on the shift in the self-absorption edge of CIGS compounds. It is shown that a change in the relative proportion of Ga and In in CIGS semiconducting compounds leads to a change in the band gap E-g for this material in the 1.05-1.72 eV spectral range at 4.2 K.",

keywords = "chalcopyrite semiconductors, chemical composition, absorption coefficient, x-ray diffraction analysis, structure, CUINSE2 SINGLE-CRYSTALS, solar-cells, epitaxial layers, CUIN1-XGAXSE2, quality, photoreflectance, performance, efficiency",

author = "Mudryi, {A. V.} and Gremenok, {V. F.} and Karotki, {A. V.} and Zalesski, {V. B.} and Yakushev, {M. V.} and F. Luckert and R. Martin",

year = "2010",

month = jul,

doi = "10.1007/s10812-010-9341-5",

language = "English",

volume = "77",

pages = "371--377",

journal = "Journal of Applied Spectroscopy",

issn = "0021-9037",

number = "3",

}

TY - JOUR

T1 - Structural and optical properties of thin films of Cu(In,Ga)Se-2 semiconductor compounds

AU - Mudryi, A. V.

AU - Gremenok, V. F.

AU - Karotki, A. V.

AU - Zalesski, V. B.

AU - Yakushev, M. V.

AU - Luckert, F.

AU - Martin, R.

PY - 2010/7

Y1 - 2010/7

N2 - The chemical composition of Cu(In,Ga)Se-2 (CIGS) semiconductor compounds is analyzed by local x-ray spectral microanalysis and scanning Auger electron spectroscopy. X-ray diffraction analysis reveals a difference in the predominant orientation of CIGS films depending on the technological conditions under which they are grown. The chemical composition is found to have a strong effect on the shift in the self-absorption edge of CIGS compounds. It is shown that a change in the relative proportion of Ga and In in CIGS semiconducting compounds leads to a change in the band gap E-g for this material in the 1.05-1.72 eV spectral range at 4.2 K.

AB - The chemical composition of Cu(In,Ga)Se-2 (CIGS) semiconductor compounds is analyzed by local x-ray spectral microanalysis and scanning Auger electron spectroscopy. X-ray diffraction analysis reveals a difference in the predominant orientation of CIGS films depending on the technological conditions under which they are grown. The chemical composition is found to have a strong effect on the shift in the self-absorption edge of CIGS compounds. It is shown that a change in the relative proportion of Ga and In in CIGS semiconducting compounds leads to a change in the band gap E-g for this material in the 1.05-1.72 eV spectral range at 4.2 K.

KW - chalcopyrite semiconductors

KW - chemical composition

KW - absorption coefficient

KW - x-ray diffraction analysis

KW - structure

KW - CUINSE2 SINGLE-CRYSTALS

KW - solar-cells

KW - epitaxial layers

KW - CUIN1-XGAXSE2

KW - quality

KW - photoreflectance

KW - performance

KW - efficiency

UR - http://www.scopus.com/inward/record.url?scp=77955053442&partnerID=8YFLogxK

U2 - 10.1007/s10812-010-9341-5

DO - 10.1007/s10812-010-9341-5

M3 - Article

SN - 0021-9037

VL - 77

SP - 371

EP - 377

JO - Journal of Applied Spectroscopy

JF - Journal of Applied Spectroscopy

IS - 3

ER -

Structural and optical properties of thin films of Cu(In,Ga)Se-2 semiconductor compounds

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Keywords

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Magnetic Field - and Pressure - Optical Effects In CULNSE2 And CULNS2

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Structural and optical properties of thin films of Cu(In,Ga)Se-2 semiconductor compounds

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Magnetic Field - and Pressure - Optical Effects In CULNSE2 And CULNS2

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