Structural and optical properties of thin films of Cu(In,Ga)Se-2 semiconductor compounds

A. V. Mudryi, V. F. Gremenok, A. V. Karotki, V. B. Zalesski, M. V. Yakushev, F. Luckert, R. Martin

Research output: Contribution to journalArticlepeer-review

28 Citations (Scopus)


The chemical composition of Cu(In,Ga)Se-2 (CIGS) semiconductor compounds is analyzed by local x-ray spectral microanalysis and scanning Auger electron spectroscopy. X-ray diffraction analysis reveals a difference in the predominant orientation of CIGS films depending on the technological conditions under which they are grown. The chemical composition is found to have a strong effect on the shift in the self-absorption edge of CIGS compounds. It is shown that a change in the relative proportion of Ga and In in CIGS semiconducting compounds leads to a change in the band gap E-g for this material in the 1.05-1.72 eV spectral range at 4.2 K.

Original languageEnglish
Pages (from-to)371-377
Number of pages7
JournalJournal of Applied Spectroscopy
Issue number3
Publication statusPublished - Jul 2010


  • chalcopyrite semiconductors
  • chemical composition
  • absorption coefficient
  • x-ray diffraction analysis
  • structure
  • solar-cells
  • epitaxial layers
  • quality
  • photoreflectance
  • performance
  • efficiency


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