Structural and optical properties of thin films of Cu(In,Ga)Se-2 semiconductor compounds

A. V. Mudryi, V. F. Gremenok, A. V. Karotki, V. B. Zalesski, M. V. Yakushev, F. Luckert, R. Martin

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21 Citations (Scopus)

Abstract

The chemical composition of Cu(In,Ga)Se-2 (CIGS) semiconductor compounds is analyzed by local x-ray spectral microanalysis and scanning Auger electron spectroscopy. X-ray diffraction analysis reveals a difference in the predominant orientation of CIGS films depending on the technological conditions under which they are grown. The chemical composition is found to have a strong effect on the shift in the self-absorption edge of CIGS compounds. It is shown that a change in the relative proportion of Ga and In in CIGS semiconducting compounds leads to a change in the band gap E-g for this material in the 1.05-1.72 eV spectral range at 4.2 K.

Original languageEnglish
Pages (from-to)371-377
Number of pages7
JournalJournal of Applied Spectroscopy
Volume77
Issue number3
DOIs
Publication statusPublished - Jul 2010

Keywords

  • chalcopyrite semiconductors
  • chemical composition
  • absorption coefficient
  • x-ray diffraction analysis
  • structure
  • CUINSE2 SINGLE-CRYSTALS
  • solar-cells
  • epitaxial layers
  • CUIN1-XGAXSE2
  • quality
  • photoreflectance
  • performance
  • efficiency

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    Mudryi, A. V., Gremenok, V. F., Karotki, A. V., Zalesski, V. B., Yakushev, M. V., Luckert, F., & Martin, R. (2010). Structural and optical properties of thin films of Cu(In,Ga)Se-2 semiconductor compounds. Journal of Applied Spectroscopy, 77(3), 371-377. https://doi.org/10.1007/s10812-010-9341-5