Structural and optical properties of thin films of Cu(In,Ga)Se-2 semiconductor compounds

A. V. Mudryi, V. F. Gremenok, A. V. Karotki, V. B. Zalesski, M. V. Yakushev, F. Luckert, R. Martin

Research output: Contribution to journalArticle

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Abstract

The chemical composition of Cu(In,Ga)Se-2 (CIGS) semiconductor compounds is analyzed by local x-ray spectral microanalysis and scanning Auger electron spectroscopy. X-ray diffraction analysis reveals a difference in the predominant orientation of CIGS films depending on the technological conditions under which they are grown. The chemical composition is found to have a strong effect on the shift in the self-absorption edge of CIGS compounds. It is shown that a change in the relative proportion of Ga and In in CIGS semiconducting compounds leads to a change in the band gap E-g for this material in the 1.05-1.72 eV spectral range at 4.2 K.

LanguageEnglish
Pages371-377
Number of pages7
JournalJournal of Applied Spectroscopy
Volume77
Issue number3
DOIs
Publication statusPublished - Jul 2010

Fingerprint

Structural properties
chemical composition
Optical properties
Semiconductor materials
lead compounds
optical properties
Thin films
self absorption
Microanalysis
Auger electron spectroscopy
thin films
Chemical analysis
microanalysis
X ray diffraction analysis
Auger spectroscopy
electron spectroscopy
proportion
Energy gap
x rays
Scanning

Keywords

  • chalcopyrite semiconductors
  • chemical composition
  • absorption coefficient
  • x-ray diffraction analysis
  • structure
  • CUINSE2 SINGLE-CRYSTALS
  • solar-cells
  • epitaxial layers
  • CUIN1-XGAXSE2
  • quality
  • photoreflectance
  • performance
  • efficiency

Cite this

Mudryi, A. V., Gremenok, V. F., Karotki, A. V., Zalesski, V. B., Yakushev, M. V., Luckert, F., & Martin, R. (2010). Structural and optical properties of thin films of Cu(In,Ga)Se-2 semiconductor compounds. Journal of Applied Spectroscopy, 77(3), 371-377. https://doi.org/10.1007/s10812-010-9341-5
Mudryi, A. V. ; Gremenok, V. F. ; Karotki, A. V. ; Zalesski, V. B. ; Yakushev, M. V. ; Luckert, F. ; Martin, R. / Structural and optical properties of thin films of Cu(In,Ga)Se-2 semiconductor compounds. In: Journal of Applied Spectroscopy. 2010 ; Vol. 77, No. 3. pp. 371-377.
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abstract = "The chemical composition of Cu(In,Ga)Se-2 (CIGS) semiconductor compounds is analyzed by local x-ray spectral microanalysis and scanning Auger electron spectroscopy. X-ray diffraction analysis reveals a difference in the predominant orientation of CIGS films depending on the technological conditions under which they are grown. The chemical composition is found to have a strong effect on the shift in the self-absorption edge of CIGS compounds. It is shown that a change in the relative proportion of Ga and In in CIGS semiconducting compounds leads to a change in the band gap E-g for this material in the 1.05-1.72 eV spectral range at 4.2 K.",
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Mudryi, AV, Gremenok, VF, Karotki, AV, Zalesski, VB, Yakushev, MV, Luckert, F & Martin, R 2010, 'Structural and optical properties of thin films of Cu(In,Ga)Se-2 semiconductor compounds' Journal of Applied Spectroscopy, vol. 77, no. 3, pp. 371-377. https://doi.org/10.1007/s10812-010-9341-5

Structural and optical properties of thin films of Cu(In,Ga)Se-2 semiconductor compounds. / Mudryi, A. V.; Gremenok, V. F.; Karotki, A. V.; Zalesski, V. B.; Yakushev, M. V.; Luckert, F.; Martin, R.

In: Journal of Applied Spectroscopy, Vol. 77, No. 3, 07.2010, p. 371-377.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Structural and optical properties of thin films of Cu(In,Ga)Se-2 semiconductor compounds

AU - Mudryi, A. V.

AU - Gremenok, V. F.

AU - Karotki, A. V.

AU - Zalesski, V. B.

AU - Yakushev, M. V.

AU - Luckert, F.

AU - Martin, R.

PY - 2010/7

Y1 - 2010/7

N2 - The chemical composition of Cu(In,Ga)Se-2 (CIGS) semiconductor compounds is analyzed by local x-ray spectral microanalysis and scanning Auger electron spectroscopy. X-ray diffraction analysis reveals a difference in the predominant orientation of CIGS films depending on the technological conditions under which they are grown. The chemical composition is found to have a strong effect on the shift in the self-absorption edge of CIGS compounds. It is shown that a change in the relative proportion of Ga and In in CIGS semiconducting compounds leads to a change in the band gap E-g for this material in the 1.05-1.72 eV spectral range at 4.2 K.

AB - The chemical composition of Cu(In,Ga)Se-2 (CIGS) semiconductor compounds is analyzed by local x-ray spectral microanalysis and scanning Auger electron spectroscopy. X-ray diffraction analysis reveals a difference in the predominant orientation of CIGS films depending on the technological conditions under which they are grown. The chemical composition is found to have a strong effect on the shift in the self-absorption edge of CIGS compounds. It is shown that a change in the relative proportion of Ga and In in CIGS semiconducting compounds leads to a change in the band gap E-g for this material in the 1.05-1.72 eV spectral range at 4.2 K.

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KW - chemical composition

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KW - x-ray diffraction analysis

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KW - solar-cells

KW - epitaxial layers

KW - CUIN1-XGAXSE2

KW - quality

KW - photoreflectance

KW - performance

KW - efficiency

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Mudryi AV, Gremenok VF, Karotki AV, Zalesski VB, Yakushev MV, Luckert F et al. Structural and optical properties of thin films of Cu(In,Ga)Se-2 semiconductor compounds. Journal of Applied Spectroscopy. 2010 Jul;77(3):371-377. https://doi.org/10.1007/s10812-010-9341-5