Structural and optical properties of MOCVD InAlN epilayers

S. Hernandez, K. Wang, D. Amabile, E. Nogales, D. Pastor, R. Cusco, L. Artus, R. W. Martin, K. P. O'Donnell, I. M. Watson, RENiBE1 Network, M Kuball (Editor), TH Myers (Editor), JM Redwing (Editor), T Mukai (Editor)

Research output: Contribution to conferencePaper

4 Citations (Scopus)

Abstract

We have studied the structural and optical properties of InxAl1-xN alloys with compositions nearly lattice-matched to GaN. Scanning electron microscopy measurements reveals a good overall surface quality, with some defect structures distributed across the surface whose density increases with the InN concentration. On the other hand, Raman scattering experiments show three peaks in the frequency range between 500 and 900 cm which have been assigned to InN-like and AIN-like E-2 modes and A(1)(LO) mode of the InxAl1-xN. These results agree with theoretical calculations previously reported where two-mode and one-mode behavior was predicted for the E-2 and A(1)(LO) modes, respectively. Photoluminescence and photoluminescence excitation allowed us to determine the emission and absorption energies of the InxAl1-xN epilayers. Both energies display a redshift as the InN fraction increases. We find a roughly linear increase of the Stokes shift with InN fraction, with Stokes shift values of approximate to 0.5 eV in the composition range close to the lattice-matched condition.
LanguageEnglish
Pages557-562
Number of pages6
Publication statusPublished - 2006
EventSymposium on GaN, AIN, InN Related Materials - Boston, MA, United States
Duration: 28 Nov 20052 Dec 2005

Other

OtherSymposium on GaN, AIN, InN Related Materials
CountryUnited States
CityBoston, MA
Period28/11/052/12/05

Fingerprint

metalorganic chemical vapor deposition
optical properties
photoluminescence
shift
energy absorption
frequency ranges
Raman spectra
scanning electron microscopy
defects
excitation
energy

Keywords

  • MOCVD InAlN epilayers
  • InxAl1-xN alloys
  • GaN
  • raman scattering

Cite this

Hernandez, S., Wang, K., Amabile, D., Nogales, E., Pastor, D., Cusco, R., ... Mukai, T. (Ed.) (2006). Structural and optical properties of MOCVD InAlN epilayers. 557-562. Paper presented at Symposium on GaN, AIN, InN Related Materials, Boston, MA, United States.
Hernandez, S. ; Wang, K. ; Amabile, D. ; Nogales, E. ; Pastor, D. ; Cusco, R. ; Artus, L. ; Martin, R. W. ; O'Donnell, K. P. ; Watson, I. M. ; Network, RENiBE1 ; Kuball, M (Editor) ; Myers, TH (Editor) ; Redwing, JM (Editor) ; Mukai, T (Editor). / Structural and optical properties of MOCVD InAlN epilayers. Paper presented at Symposium on GaN, AIN, InN Related Materials, Boston, MA, United States.6 p.
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title = "Structural and optical properties of MOCVD InAlN epilayers",
abstract = "We have studied the structural and optical properties of InxAl1-xN alloys with compositions nearly lattice-matched to GaN. Scanning electron microscopy measurements reveals a good overall surface quality, with some defect structures distributed across the surface whose density increases with the InN concentration. On the other hand, Raman scattering experiments show three peaks in the frequency range between 500 and 900 cm which have been assigned to InN-like and AIN-like E-2 modes and A(1)(LO) mode of the InxAl1-xN. These results agree with theoretical calculations previously reported where two-mode and one-mode behavior was predicted for the E-2 and A(1)(LO) modes, respectively. Photoluminescence and photoluminescence excitation allowed us to determine the emission and absorption energies of the InxAl1-xN epilayers. Both energies display a redshift as the InN fraction increases. We find a roughly linear increase of the Stokes shift with InN fraction, with Stokes shift values of approximate to 0.5 eV in the composition range close to the lattice-matched condition.",
keywords = "MOCVD InAlN epilayers, InxAl1-xN alloys , GaN, raman scattering",
author = "S. Hernandez and K. Wang and D. Amabile and E. Nogales and D. Pastor and R. Cusco and L. Artus and Martin, {R. W.} and O'Donnell, {K. P.} and Watson, {I. M.} and RENiBE1 Network and M Kuball and TH Myers and JM Redwing and T Mukai",
note = "Symposium on GaN, AIN, InN Related Materials held at the 2005 MRS Fall Meeting, Boston, MA, NOV 28-DEC 02, 2005; Symposium on GaN, AIN, InN Related Materials ; Conference date: 28-11-2005 Through 02-12-2005",
year = "2006",
language = "English",
pages = "557--562",

}

Hernandez, S, Wang, K, Amabile, D, Nogales, E, Pastor, D, Cusco, R, Artus, L, Martin, RW, O'Donnell, KP, Watson, IM, Network, RENE, Kuball, M (ed.), Myers, TH (ed.), Redwing, JM (ed.) & Mukai, T (ed.) 2006, 'Structural and optical properties of MOCVD InAlN epilayers' Paper presented at Symposium on GaN, AIN, InN Related Materials, Boston, MA, United States, 28/11/05 - 2/12/05, pp. 557-562.

Structural and optical properties of MOCVD InAlN epilayers. / Hernandez, S.; Wang, K.; Amabile, D.; Nogales, E.; Pastor, D.; Cusco, R.; Artus, L.; Martin, R. W.; O'Donnell, K. P.; Watson, I. M.; Network, RENiBE1; Kuball, M (Editor); Myers, TH (Editor); Redwing, JM (Editor); Mukai, T (Editor).

2006. 557-562 Paper presented at Symposium on GaN, AIN, InN Related Materials, Boston, MA, United States.

Research output: Contribution to conferencePaper

TY - CONF

T1 - Structural and optical properties of MOCVD InAlN epilayers

AU - Hernandez, S.

AU - Wang, K.

AU - Amabile, D.

AU - Nogales, E.

AU - Pastor, D.

AU - Cusco, R.

AU - Artus, L.

AU - Martin, R. W.

AU - O'Donnell, K. P.

AU - Watson, I. M.

AU - Network, RENiBE1

A2 - Kuball, M

A2 - Myers, TH

A2 - Redwing, JM

A2 - Mukai, T

N1 - Symposium on GaN, AIN, InN Related Materials held at the 2005 MRS Fall Meeting, Boston, MA, NOV 28-DEC 02, 2005

PY - 2006

Y1 - 2006

N2 - We have studied the structural and optical properties of InxAl1-xN alloys with compositions nearly lattice-matched to GaN. Scanning electron microscopy measurements reveals a good overall surface quality, with some defect structures distributed across the surface whose density increases with the InN concentration. On the other hand, Raman scattering experiments show three peaks in the frequency range between 500 and 900 cm which have been assigned to InN-like and AIN-like E-2 modes and A(1)(LO) mode of the InxAl1-xN. These results agree with theoretical calculations previously reported where two-mode and one-mode behavior was predicted for the E-2 and A(1)(LO) modes, respectively. Photoluminescence and photoluminescence excitation allowed us to determine the emission and absorption energies of the InxAl1-xN epilayers. Both energies display a redshift as the InN fraction increases. We find a roughly linear increase of the Stokes shift with InN fraction, with Stokes shift values of approximate to 0.5 eV in the composition range close to the lattice-matched condition.

AB - We have studied the structural and optical properties of InxAl1-xN alloys with compositions nearly lattice-matched to GaN. Scanning electron microscopy measurements reveals a good overall surface quality, with some defect structures distributed across the surface whose density increases with the InN concentration. On the other hand, Raman scattering experiments show three peaks in the frequency range between 500 and 900 cm which have been assigned to InN-like and AIN-like E-2 modes and A(1)(LO) mode of the InxAl1-xN. These results agree with theoretical calculations previously reported where two-mode and one-mode behavior was predicted for the E-2 and A(1)(LO) modes, respectively. Photoluminescence and photoluminescence excitation allowed us to determine the emission and absorption energies of the InxAl1-xN epilayers. Both energies display a redshift as the InN fraction increases. We find a roughly linear increase of the Stokes shift with InN fraction, with Stokes shift values of approximate to 0.5 eV in the composition range close to the lattice-matched condition.

KW - MOCVD InAlN epilayers

KW - InxAl1-xN alloys

KW - GaN

KW - raman scattering

UR - http://direct.bl.uk/bld/PlaceOrder.do?UIN=196793598&ETOC=RN&from=searchengine

M3 - Paper

SP - 557

EP - 562

ER -

Hernandez S, Wang K, Amabile D, Nogales E, Pastor D, Cusco R et al. Structural and optical properties of MOCVD InAlN epilayers. 2006. Paper presented at Symposium on GaN, AIN, InN Related Materials, Boston, MA, United States.