Structural and optical properties of MOCVD InAlN epilayers

S. Hernandez; K. Wang; D. Amabile; E. Nogales; D. Pastor; R. Cusco; L. Artus; R. W. Martin; K. P. O'Donnell; I. M. Watson; RENiBE1 Network; M Kuball; TH Myers; JM Redwing; T Mukai

Structural and optical properties of MOCVD InAlN epilayers

S. Hernandez, K. Wang, D. Amabile, E. Nogales, D. Pastor, R. Cusco, L. Artus, R. W. Martin, K. P. O'Donnell, I. M. Watson, RENiBE1 Network, M Kuball (Editor), TH Myers (Editor), JM Redwing (Editor), T Mukai (Editor)

Research output: Contribution to conference › Paper

4 Citations (Scopus)

Abstract

We have studied the structural and optical properties of InxAl1-xN alloys with compositions nearly lattice-matched to GaN. Scanning electron microscopy measurements reveals a good overall surface quality, with some defect structures distributed across the surface whose density increases with the InN concentration. On the other hand, Raman scattering experiments show three peaks in the frequency range between 500 and 900 cm which have been assigned to InN-like and AIN-like E-2 modes and A(1)(LO) mode of the InxAl1-xN. These results agree with theoretical calculations previously reported where two-mode and one-mode behavior was predicted for the E-2 and A(1)(LO) modes, respectively. Photoluminescence and photoluminescence excitation allowed us to determine the emission and absorption energies of the InxAl1-xN epilayers. Both energies display a redshift as the InN fraction increases. We find a roughly linear increase of the Stokes shift with InN fraction, with Stokes shift values of approximate to 0.5 eV in the composition range close to the lattice-matched condition.

Original language	English
Pages	557-562
Number of pages	6
Publication status	Published - 2006
Event	Symposium on GaN, AIN, InN Related Materials - Boston, MA, United States Duration: 28 Nov 2005 → 2 Dec 2005

Other

Other	Symposium on GaN, AIN, InN Related Materials
Country/Territory	United States
City	Boston, MA
Period	28/11/05 → 2/12/05

Keywords

MOCVD InAlN epilayers
InxAl1-xN alloys
GaN
raman scattering

Cite this

Hernandez, S., Wang, K., Amabile, D., Nogales, E., Pastor, D., Cusco, R., Artus, L., Martin, R. W., O'Donnell, K. P., Watson, I. M., Network, RENE., Kuball, M. (Ed.), Myers, TH. (Ed.), Redwing, JM. (Ed.), & Mukai, T. (Ed.) (2006). Structural and optical properties of MOCVD InAlN epilayers. 557-562. Paper presented at Symposium on GaN, AIN, InN Related Materials, Boston, MA, United States.

@conference{d61014b599b64c53b5d3c5ec01d457cd,

title = "Structural and optical properties of MOCVD InAlN epilayers",

abstract = "We have studied the structural and optical properties of InxAl1-xN alloys with compositions nearly lattice-matched to GaN. Scanning electron microscopy measurements reveals a good overall surface quality, with some defect structures distributed across the surface whose density increases with the InN concentration. On the other hand, Raman scattering experiments show three peaks in the frequency range between 500 and 900 cm which have been assigned to InN-like and AIN-like E-2 modes and A(1)(LO) mode of the InxAl1-xN. These results agree with theoretical calculations previously reported where two-mode and one-mode behavior was predicted for the E-2 and A(1)(LO) modes, respectively. Photoluminescence and photoluminescence excitation allowed us to determine the emission and absorption energies of the InxAl1-xN epilayers. Both energies display a redshift as the InN fraction increases. We find a roughly linear increase of the Stokes shift with InN fraction, with Stokes shift values of approximate to 0.5 eV in the composition range close to the lattice-matched condition.",

keywords = "MOCVD InAlN epilayers, InxAl1-xN alloys , GaN, raman scattering",

author = "S. Hernandez and K. Wang and D. Amabile and E. Nogales and D. Pastor and R. Cusco and L. Artus and Martin, {R. W.} and O'Donnell, {K. P.} and Watson, {I. M.} and RENiBE1 Network and M Kuball and TH Myers and JM Redwing and T Mukai",

note = "Symposium on GaN, AIN, InN Related Materials held at the 2005 MRS Fall Meeting, Boston, MA, NOV 28-DEC 02, 2005; Symposium on GaN, AIN, InN Related Materials ; Conference date: 28-11-2005 Through 02-12-2005",

year = "2006",

language = "English",

pages = "557--562",

}

Hernandez, S, Wang, K, Amabile, D, Nogales, E, Pastor, D, Cusco, R, Artus, L, Martin, RW, O'Donnell, KP, Watson, IM, Network, RENE, Kuball, M (ed.), Myers, TH (ed.), Redwing, JM (ed.) & Mukai, T (ed.) 2006, 'Structural and optical properties of MOCVD InAlN epilayers', Paper presented at Symposium on GaN, AIN, InN Related Materials, Boston, MA, United States, 28/11/05 - 2/12/05 pp. 557-562.

TY - CONF

T1 - Structural and optical properties of MOCVD InAlN epilayers

AU - Hernandez, S.

AU - Wang, K.

AU - Amabile, D.

AU - Nogales, E.

AU - Pastor, D.

AU - Cusco, R.

AU - Artus, L.

AU - Martin, R. W.

AU - O'Donnell, K. P.

AU - Watson, I. M.

AU - Network, RENiBE1

A2 - Kuball, M

A2 - Myers, TH

A2 - Redwing, JM

A2 - Mukai, T

N1 - Symposium on GaN, AIN, InN Related Materials held at the 2005 MRS Fall Meeting, Boston, MA, NOV 28-DEC 02, 2005

PY - 2006

Y1 - 2006

N2 - We have studied the structural and optical properties of InxAl1-xN alloys with compositions nearly lattice-matched to GaN. Scanning electron microscopy measurements reveals a good overall surface quality, with some defect structures distributed across the surface whose density increases with the InN concentration. On the other hand, Raman scattering experiments show three peaks in the frequency range between 500 and 900 cm which have been assigned to InN-like and AIN-like E-2 modes and A(1)(LO) mode of the InxAl1-xN. These results agree with theoretical calculations previously reported where two-mode and one-mode behavior was predicted for the E-2 and A(1)(LO) modes, respectively. Photoluminescence and photoluminescence excitation allowed us to determine the emission and absorption energies of the InxAl1-xN epilayers. Both energies display a redshift as the InN fraction increases. We find a roughly linear increase of the Stokes shift with InN fraction, with Stokes shift values of approximate to 0.5 eV in the composition range close to the lattice-matched condition.

AB - We have studied the structural and optical properties of InxAl1-xN alloys with compositions nearly lattice-matched to GaN. Scanning electron microscopy measurements reveals a good overall surface quality, with some defect structures distributed across the surface whose density increases with the InN concentration. On the other hand, Raman scattering experiments show three peaks in the frequency range between 500 and 900 cm which have been assigned to InN-like and AIN-like E-2 modes and A(1)(LO) mode of the InxAl1-xN. These results agree with theoretical calculations previously reported where two-mode and one-mode behavior was predicted for the E-2 and A(1)(LO) modes, respectively. Photoluminescence and photoluminescence excitation allowed us to determine the emission and absorption energies of the InxAl1-xN epilayers. Both energies display a redshift as the InN fraction increases. We find a roughly linear increase of the Stokes shift with InN fraction, with Stokes shift values of approximate to 0.5 eV in the composition range close to the lattice-matched condition.

KW - MOCVD InAlN epilayers

KW - InxAl1-xN alloys

KW - GaN

KW - raman scattering

UR - http://direct.bl.uk/bld/PlaceOrder.do?UIN=196793598&ETOC=RN&from=searchengine

M3 - Paper

SP - 557

EP - 562

T2 - Symposium on GaN, AIN, InN Related Materials

Y2 - 28 November 2005 through 2 December 2005

ER -

Structural and optical properties of MOCVD InAlN epilayers

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