Structural and optical properties of CdS/Cu(In,Ga)Se-2 heterostructures irradiated by high energy electrons

A. V. Karotki, A.V. Mudryi, Michael V Yakushev, Franziska Luckert, Robert Martin

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Thin films of Cu(In, Ga)Se-2 (CIGS) with a Ga/(Ga + In) ratio of similar to 0.27 corresponding to the standard elemental composition for solar-energy transducers were grown on Mo-coated glass substrates by the Cu, In, Ga, and Se co-evaporation technique from different sources. Transmission (T), photoluminescence (PL), and photoluminescence excitation (PLE) spectra at 4.2 K were used to analyze electronic properties in the asgrown and electron-irradiated CIGS films. The band-gap energy (E-g) of the CIGS films measured using both transmission and PLE methods was found to be about 1.28 eV at 4.2 K. Two deep bands in the PL spectra of the irradiated CIGS films, P-1 at similar to 0.91 eV and P-2 at similar to 0.77 eV, have been detected. These bands are tentatively associated with copper atoms substituting indium (Cu-In) and indium vacancies V-In, respectively, as the simplest radiation-induced defects.

Original languageEnglish
Pages (from-to)668-674
Number of pages7
JournalJournal of Applied Spectroscopy
Volume77
Issue number5
DOIs
Publication statusPublished - Nov 2010

Keywords

  • Cu(In,Ga)Se2
  • photoluminescence
  • electron irradiation
  • defects

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