Structural and optical emission uniformity of m-plane InGaN single quantum wells in core-shell nanorods

E mmanuel D. Le Boulbar, Paul R. Edwards, Shahrzad Hosseini Vajargah, Ian Griffiths, Ionut Gîrgel, Pierre - Marie Coulon, David Cherns, Robert W. Martin, C. J. Humphreys, Chris R. Bowen, D. W. E. Allsopp, P. A. Shields

Research output: Contribution to journalArticlepeer-review

18 Citations (Scopus)
37 Downloads (Pure)


Controlling the long-range homogeneity of core-shell InGaN/GaN layers is essential for their use in light-emitting devices. This paper demonstrates variations in optical emission energy as low as ~7 meV.µm-1 along the m-plane facets from core-shell InGaN/GaN single quantum wells as measured through high-resolution cathodoluminescence hyperspectral imaging. The layers were grown by metal organic vapor phase epitaxy on etched GaN nanorod arrays with a pitch of 2 µm. High-resolution transmission electron microscopy and spatially-resolved energy-dispersive X-ray spectroscopy measurements demonstrate a long-range InN-content and thickness homogeneity along the entire 1.2 μm length of the m-plane. Such homogeneous emission was found on the m-plane despite the observation of short range compositional fluctuations in the InGaN single quantum well. The ability to achieve this uniform optical emission from InGaN/GaN core-shell layers is critical to enable them to compete with and replace conventional planar light-emitting devices.
Original languageEnglish
Pages (from-to)1907–1916
Number of pages10
JournalCrystal Growth and Design
Issue number4
Early online date7 Mar 2016
Publication statusPublished - 6 Apr 2016


  • gallium nitride
  • GaN
  • nanostructured materials
  • LED
  • cathodoluminescence
  • CL
  • SEM
  • TEM
  • EDX


Dive into the research topics of 'Structural and optical emission uniformity of m-plane InGaN single quantum wells in core-shell nanorods'. Together they form a unique fingerprint.

Cite this