Structural and optical emission uniformity of m-plane InGaN single quantum wells in core-shell nanorods

E mmanuel D. Le Boulbar, Paul R. Edwards, Shahrzad Hosseini Vajargah, Ian Griffiths, Ionut Gîrgel, Pierre - Marie Coulon, David Cherns, Robert W. Martin, C. J. Humphreys, Chris R. Bowen, D. W. E. Allsopp, P. A. Shields

Research output: Contribution to journalArticle

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Abstract

Controlling the long-range homogeneity of core-shell InGaN/GaN layers is essential for their use in light-emitting devices. This paper demonstrates variations in optical emission energy as low as ~7 meV.µm-1 along the m-plane facets from core-shell InGaN/GaN single quantum wells as measured through high-resolution cathodoluminescence hyperspectral imaging. The layers were grown by metal organic vapor phase epitaxy on etched GaN nanorod arrays with a pitch of 2 µm. High-resolution transmission electron microscopy and spatially-resolved energy-dispersive X-ray spectroscopy measurements demonstrate a long-range InN-content and thickness homogeneity along the entire 1.2 μm length of the m-plane. Such homogeneous emission was found on the m-plane despite the observation of short range compositional fluctuations in the InGaN single quantum well. The ability to achieve this uniform optical emission from InGaN/GaN core-shell layers is critical to enable them to compete with and replace conventional planar light-emitting devices.
Original languageEnglish
Pages (from-to)1907–1916
Number of pages10
JournalCrystal Growth and Design
Volume16
Issue number4
Early online date7 Mar 2016
DOIs
Publication statusPublished - 6 Apr 2016

Fingerprint

Nanorods
Semiconductor quantum wells
nanorods
light emission
quantum wells
Vapor phase epitaxy
homogeneity
Cathodoluminescence
High resolution transmission electron microscopy
Metals
high resolution
cathodoluminescence
vapor phase epitaxy
flat surfaces
transmission electron microscopy
energy
metals
spectroscopy
x rays
X-Ray Emission Spectrometry

Keywords

  • gallium nitride
  • GaN
  • nanostructured materials
  • LED
  • cathodoluminescence
  • CL
  • SEM
  • TEM
  • EDX
  • MOVPE

Cite this

Le Boulbar, E. M. D., Edwards, P. R., Vajargah, S. H., Griffiths, I., Gîrgel, I., Coulon, P. . M., ... Shields, P. A. (2016). Structural and optical emission uniformity of m-plane InGaN single quantum wells in core-shell nanorods. Crystal Growth and Design, 16(4), 1907–1916. https://doi.org/10.1021/acs.cgd.5b01438
Le Boulbar, E mmanuel D. ; Edwards, Paul R. ; Vajargah, Shahrzad Hosseini ; Griffiths, Ian ; Gîrgel, Ionut ; Coulon, Pierre - Marie ; Cherns, David ; Martin, Robert W. ; Humphreys, C. J. ; Bowen, Chris R. ; Allsopp, D. W. E. ; Shields, P. A. / Structural and optical emission uniformity of m-plane InGaN single quantum wells in core-shell nanorods. In: Crystal Growth and Design. 2016 ; Vol. 16, No. 4. pp. 1907–1916.
@article{1ce08d16d95b4e468bf4a3ef4b2a550a,
title = "Structural and optical emission uniformity of m-plane InGaN single quantum wells in core-shell nanorods",
abstract = "Controlling the long-range homogeneity of core-shell InGaN/GaN layers is essential for their use in light-emitting devices. This paper demonstrates variations in optical emission energy as low as ~7 meV.µm-1 along the m-plane facets from core-shell InGaN/GaN single quantum wells as measured through high-resolution cathodoluminescence hyperspectral imaging. The layers were grown by metal organic vapor phase epitaxy on etched GaN nanorod arrays with a pitch of 2 µm. High-resolution transmission electron microscopy and spatially-resolved energy-dispersive X-ray spectroscopy measurements demonstrate a long-range InN-content and thickness homogeneity along the entire 1.2 μm length of the m-plane. Such homogeneous emission was found on the m-plane despite the observation of short range compositional fluctuations in the InGaN single quantum well. The ability to achieve this uniform optical emission from InGaN/GaN core-shell layers is critical to enable them to compete with and replace conventional planar light-emitting devices.",
keywords = "gallium nitride, GaN, nanostructured materials, LED, cathodoluminescence, CL, SEM, TEM, EDX, MOVPE",
author = "{Le Boulbar}, {E mmanuel D.} and Edwards, {Paul R.} and Vajargah, {Shahrzad Hosseini} and Ian Griffiths and Ionut G{\^i}rgel and Coulon, {Pierre - Marie} and David Cherns and Martin, {Robert W.} and Humphreys, {C. J.} and Bowen, {Chris R.} and Allsopp, {D. W. E.} and Shields, {P. A.}",
year = "2016",
month = "4",
day = "6",
doi = "10.1021/acs.cgd.5b01438",
language = "English",
volume = "16",
pages = "1907–1916",
journal = "Crystal Growth and Design",
issn = "1528-7483",
publisher = "American Chemical Society",
number = "4",

}

Le Boulbar, EMD, Edwards, PR, Vajargah, SH, Griffiths, I, Gîrgel, I, Coulon, PM, Cherns, D, Martin, RW, Humphreys, CJ, Bowen, CR, Allsopp, DWE & Shields, PA 2016, 'Structural and optical emission uniformity of m-plane InGaN single quantum wells in core-shell nanorods', Crystal Growth and Design, vol. 16, no. 4, pp. 1907–1916. https://doi.org/10.1021/acs.cgd.5b01438

Structural and optical emission uniformity of m-plane InGaN single quantum wells in core-shell nanorods. / Le Boulbar, E mmanuel D.; Edwards, Paul R.; Vajargah, Shahrzad Hosseini; Griffiths, Ian; Gîrgel, Ionut; Coulon, Pierre - Marie; Cherns, David; Martin, Robert W.; Humphreys, C. J.; Bowen, Chris R.; Allsopp, D. W. E.; Shields, P. A.

In: Crystal Growth and Design, Vol. 16, No. 4, 06.04.2016, p. 1907–1916.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Structural and optical emission uniformity of m-plane InGaN single quantum wells in core-shell nanorods

AU - Le Boulbar, E mmanuel D.

AU - Edwards, Paul R.

AU - Vajargah, Shahrzad Hosseini

AU - Griffiths, Ian

AU - Gîrgel, Ionut

AU - Coulon, Pierre - Marie

AU - Cherns, David

AU - Martin, Robert W.

AU - Humphreys, C. J.

AU - Bowen, Chris R.

AU - Allsopp, D. W. E.

AU - Shields, P. A.

PY - 2016/4/6

Y1 - 2016/4/6

N2 - Controlling the long-range homogeneity of core-shell InGaN/GaN layers is essential for their use in light-emitting devices. This paper demonstrates variations in optical emission energy as low as ~7 meV.µm-1 along the m-plane facets from core-shell InGaN/GaN single quantum wells as measured through high-resolution cathodoluminescence hyperspectral imaging. The layers were grown by metal organic vapor phase epitaxy on etched GaN nanorod arrays with a pitch of 2 µm. High-resolution transmission electron microscopy and spatially-resolved energy-dispersive X-ray spectroscopy measurements demonstrate a long-range InN-content and thickness homogeneity along the entire 1.2 μm length of the m-plane. Such homogeneous emission was found on the m-plane despite the observation of short range compositional fluctuations in the InGaN single quantum well. The ability to achieve this uniform optical emission from InGaN/GaN core-shell layers is critical to enable them to compete with and replace conventional planar light-emitting devices.

AB - Controlling the long-range homogeneity of core-shell InGaN/GaN layers is essential for their use in light-emitting devices. This paper demonstrates variations in optical emission energy as low as ~7 meV.µm-1 along the m-plane facets from core-shell InGaN/GaN single quantum wells as measured through high-resolution cathodoluminescence hyperspectral imaging. The layers were grown by metal organic vapor phase epitaxy on etched GaN nanorod arrays with a pitch of 2 µm. High-resolution transmission electron microscopy and spatially-resolved energy-dispersive X-ray spectroscopy measurements demonstrate a long-range InN-content and thickness homogeneity along the entire 1.2 μm length of the m-plane. Such homogeneous emission was found on the m-plane despite the observation of short range compositional fluctuations in the InGaN single quantum well. The ability to achieve this uniform optical emission from InGaN/GaN core-shell layers is critical to enable them to compete with and replace conventional planar light-emitting devices.

KW - gallium nitride

KW - GaN

KW - nanostructured materials

KW - LED

KW - cathodoluminescence

KW - CL

KW - SEM

KW - TEM

KW - EDX

KW - MOVPE

UR - http://pubs.acs.org/journal/cgdefu

U2 - 10.1021/acs.cgd.5b01438

DO - 10.1021/acs.cgd.5b01438

M3 - Article

VL - 16

SP - 1907

EP - 1916

JO - Crystal Growth and Design

JF - Crystal Growth and Design

SN - 1528-7483

IS - 4

ER -