Projects per year
The scanning electron microscopy techniques of electron backscatter diffraction (EBSD), electron channelling contrast imaging (ECCI) and cathodoluminescence (CL) hyperspectral imaging provide complementary information on the structural and luminescence properties of materials rapidly and non-destructively, with a spatial resolution of tens of nanometres. EBSD provides crystal orientation, crystal phase and strain analysis, whilst ECCI is used to determine the planar distribution of extended defects over a large area of a given sample. CL reveals the influence of crystal structure, composition and strain on intrinsic luminescence and/or reveals defect-related luminescence. Dark features are also observed in CL images where carrier recombination at defects is non-radiative. The combination of these techniques is a powerful approach to clarifying the role of crystallography and extended defects on a material's light emission properties. Here we describe the EBSD, ECCI and CL techniques and illustrate their use for investigating the structural and light emitting properties of UV-emitting nitride semiconductor structures. We discuss our investigations of the type, density and distribution of defects in GaN, AlN and AlGaN thin films and also discuss the determination of the polarity of GaN nanowires.
- scanning electron microscopy
FingerprintDive into the research topics of 'Structural and luminescence imaging and characterisation of semiconductors in the scanning electron microscope'. Together they form a unique fingerprint.
- 6 Finished
1/10/17 → 1/10/21
Project: Research Studentship - Internally Allocated
1/06/17 → 30/11/21
8/11/15 → 7/11/19
Data for: “Scanning electron microscopy as a flexible technique for investigating the properties of UV-emitting nitride semiconductor thin films”
Trager-Cowan, C. (Creator), Alasmari, A. M. A. (Creator), Avis, W. (Contributor), Bruckbauer, J. (Creator), Edwards, P. (Contributor), Hourahine, B. (Contributor), Kraeusel, S. (Contributor), Kusch, G. (Creator), Johnston, R. (Contributor), Gunasekar, N. (Creator), Martin, R. (Contributor), Mohammad S, A. (Creator), Pascal, E. (Contributor), Spasevski, L. (Creator), Thomson, D. (Contributor), Vespucci, S. (Contributor), Parbrook, P. (Contributor), Smith, M. (Contributor), Enslin, J. (Contributor), Mehnke, F. (Contributor), Kneissl, M. (Contributor), Kuhn, C. (Contributor), Wernicke, T. (Contributor), Hagedorn, S. (Contributor), Knauer, A. (Contributor), Kueller, V. (Contributor), Walde, S. (Contributor), Weyers, M. (Contributor), Coulon, P. (Creator), Shields, P. (Contributor), Zhang, Y. (Contributor), Jiu, L. (Contributor), Gong, Y. (Contributor), Smith, R. M. (Contributor), Wang, T. (Contributor) & Winkelmann, A. (Creator), University of Strathclyde, 28 Oct 2019
Data for: "Determining GaN nanowire polarity and its influence on light emission in the scanning electron microscope"
Gunasekar, N. (Creator), Bruckbauer, J. (Creator), Winkelmann, A. (Contributor), Edwards, P. (Contributor), Hourahine, B. (Contributor), Trager-Cowan, C. (Contributor), Martin, R. (Supervisor) & Wang, T. (Creator), University of Strathclyde, 29 Apr 2019