Structural and luminescence imaging and characterisation of semiconductors in the scanning electron microscope

Carol Trager-Cowan; Aeshah Alasmari; William Avis; Jochen Bruckbauer; Paul R Edwards; Gergely Ferenczi; Benjamin Hourahine; Almpes Kotzai; Simon Kraeusel; Gunnar Kusch; Robert W Martin; Ryan McDermott; Naresh Gunasekar; M. Nouf-Allehiani; Elena Pascal; David Thomson; Stefano Vespucci; Matthew David Smith; Peter J Parbrook; Johannes Enslin; Frank Mehnke; Christian Kuhn; Tim Wernicke; Michael Kneissl; Sylvia Hagedorn; Arne Knauer; Sebastian Walde; Markus Weyers; Pierre-Marie Coulon; Philip Shields; J. Bai; Y. Gong; Ling Jiu; Y. Zhang; Richard Smith; Tao Wang; Aimo Winkelmann

doi:10.1088/1361-6641/ab75a5

Structural and luminescence imaging and characterisation of semiconductors in the scanning electron microscope

Carol Trager-Cowan, Aeshah Alasmari, William Avis, Jochen Bruckbauer, Paul R Edwards, Gergely Ferenczi, Benjamin Hourahine, Almpes Kotzai, Simon Kraeusel, Gunnar Kusch, Robert W Martin, Ryan McDermott, Naresh Gunasekar, M. Nouf-Allehiani, Elena Pascal, David Thomson, Stefano Vespucci, Matthew David Smith, Peter J Parbrook, Johannes EnslinFrank Mehnke, Christian Kuhn, Tim Wernicke, Michael Kneissl, Sylvia Hagedorn, Arne Knauer, Sebastian Walde, Markus Weyers, Pierre-Marie Coulon, Philip Shields, J. Bai, Y. Gong, Ling Jiu, Y. Zhang, Richard Smith, Tao Wang, Aimo Winkelmann

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Abstract

The scanning electron microscopy techniques of electron backscatter diffraction (EBSD), electron channelling contrast imaging (ECCI) and cathodoluminescence (CL) hyperspectral imaging provide complementary information on the structural and luminescence properties of materials rapidly and non-destructively, with a spatial resolution of tens of nanometres. EBSD provides crystal orientation, crystal phase and strain analysis, whilst ECCI is used to determine the planar distribution of extended defects over a large area of a given sample. CL reveals the influence of crystal structure, composition and strain on intrinsic luminescence and/or reveals defect-related luminescence. Dark features are also observed in CL images where carrier recombination at defects is non-radiative. The combination of these techniques is a powerful approach to clarifying the role of crystallography and extended defects on a material's light emission properties. Here we describe the EBSD, ECCI and CL techniques and illustrate their use for investigating the structural and light emitting properties of UV-emitting nitride semiconductor structures. We discuss our investigations of the type, density and distribution of defects in GaN, AlN and AlGaN thin films and also discuss the determination of the polarity of GaN nanowires.

Original language	English
Article number	054001
Number of pages	15
Journal	Semiconductor Science and Technology
Volume	35
Issue number	5
Early online date	12 Feb 2020
DOIs	https://doi.org/10.1088/1361-6641/ab75a5
Publication status	Published - 25 Mar 2020

Keywords

EBSD
nitride
scanning electron microscopy

Access to Document

10.1088/1361-6641/ab75a5Licence: CC BY 4.0

Trager-Cowan-etal-SST-2020-Structural-and-luminescence-imaging-and-characterisation-of-semiconductorsFinal published version, 1.38 MBLicence: CC BY 4.0

Carol Trager-Cowan
- c.trager-cowanstrath.acuk
- Physics - Reader
- SUPA
Person: Academic

Doctoral Training Partnership (DTP 2016-2017 University of Strathclyde) | McDermott, Ryan
Trager-Cowan, C. (Principal Investigator), Martin, R. (Co-investigator) & McDermott, R. (Research Co-investigator)
EPSRC (Engineering and Physical Sciences Research Council)
1/10/17 → 1/10/21
Project: Research Studentship - Internally Allocated
Quantitative non-destructive nanoscale characterisation of advanced materials
Hourahine, B. (Principal Investigator), Edwards, P. (Co-investigator), Roper, M. (Co-investigator), Trager-Cowan, C. (Co-investigator) & Gunasekar, N. (Research Co-investigator)
EPSRC (Engineering and Physical Sciences Research Council)
1/06/17 → 30/11/21
Project: Research
Nanoanalysis for Advanced Materials and Healthcare - EPSRC strategic equipment
Martin, R. (Principal Investigator), Edwards, P. (Co-investigator), Faulds, K. (Co-investigator), Florence, A. (Co-investigator), Graham, D. (Co-investigator), Sefcik, J. (Co-investigator), Ter Horst, J. (Co-investigator), Trager-Cowan, C. (Co-investigator), Uttamchandani, D. (Co-investigator) & Wark, A. (Co-investigator)
EPSRC (Engineering and Physical Sciences Research Council)
8/11/15 → 7/11/19
Project: Research

Data for: “Scanning electron microscopy as a flexible technique for investigating the properties of UV-emitting nitride semiconductor thin films”
Trager-Cowan, C. (Creator), Alasmari, A. M. A. (Creator), Avis, W. (Contributor), Bruckbauer, J. (Creator), Edwards, P. (Contributor), Hourahine, B. (Contributor), Kraeusel, S. (Contributor), Kusch, G. (Creator), Johnston, R. (Contributor), Gunasekar, N. (Creator), Martin, R. (Contributor), Mohammad S, A. (Creator), Pascal, E. (Contributor), Spasevski, L. (Creator), Thomson, D. (Contributor), Vespucci, S. (Contributor), Parbrook, P. (Contributor), Smith, M. (Contributor), Enslin, J. (Contributor), Mehnke, F. (Contributor), Kneissl, M. (Contributor), Kuhn, C. (Contributor), Wernicke, T. (Contributor), Hagedorn, S. (Contributor), Knauer, A. (Contributor), Kueller, V. (Contributor), Walde, S. (Contributor), Weyers, M. (Contributor), Coulon, P.-M. (Creator), Shields, P. (Contributor), Zhang, Y. (Contributor), Jiu, L. (Contributor), Gong, Y. (Contributor), Smith, R. M. (Contributor), Wang, T. (Contributor) & Winkelmann, A. (Creator), University of Strathclyde, 28 Oct 2019
DOI: 10.15129/b5238863-a088-4f30-8b13-2625260eb73a
Dataset
Data for: "Determining GaN nanowire polarity and its influence on light emission in the scanning electron microscope"
Gunasekar, N. (Creator), Bruckbauer, J. (Creator), Winkelmann, A. (Contributor), Edwards, P. (Contributor), Hourahine, B. (Contributor), Trager-Cowan, C. (Contributor), Martin, R. (Supervisor) & Wang, T. (Creator), University of Strathclyde, 29 Apr 2019
DOI: 10.15129/b152a121-3495-4235-b9cd-985bf1355cd8
Dataset

ESEM Quanta 250
Martin, R.
Physics
Facility/equipment: Equipment
SEM SIRION 200
Martin, R.
Physics
Facility/equipment: Equipment

Cite this

Trager-Cowan, C., Alasmari, A., Avis, W., Bruckbauer, J., Edwards, P. R., Ferenczi, G., Hourahine, B., Kotzai, A., Kraeusel, S., Kusch, G., Martin, R. W., McDermott, R., Gunasekar, N., Nouf-Allehiani, M., Pascal, E., Thomson, D., Vespucci, S., Smith, M. D., Parbrook, P. J., ... Winkelmann, A. (2020). Structural and luminescence imaging and characterisation of semiconductors in the scanning electron microscope. Semiconductor Science and Technology, 35(5), Article 054001. https://doi.org/10.1088/1361-6641/ab75a5

@article{876acc0e3a1048acb16488ad51ed3d56,

title = "Structural and luminescence imaging and characterisation of semiconductors in the scanning electron microscope",

abstract = "The scanning electron microscopy techniques of electron backscatter diffraction (EBSD), electron channelling contrast imaging (ECCI) and cathodoluminescence (CL) hyperspectral imaging provide complementary information on the structural and luminescence properties of materials rapidly and non-destructively, with a spatial resolution of tens of nanometres. EBSD provides crystal orientation, crystal phase and strain analysis, whilst ECCI is used to determine the planar distribution of extended defects over a large area of a given sample. CL reveals the influence of crystal structure, composition and strain on intrinsic luminescence and/or reveals defect-related luminescence. Dark features are also observed in CL images where carrier recombination at defects is non-radiative. The combination of these techniques is a powerful approach to clarifying the role of crystallography and extended defects on a material's light emission properties. Here we describe the EBSD, ECCI and CL techniques and illustrate their use for investigating the structural and light emitting properties of UV-emitting nitride semiconductor structures. We discuss our investigations of the type, density and distribution of defects in GaN, AlN and AlGaN thin films and also discuss the determination of the polarity of GaN nanowires.",

keywords = "EBSD, nitride, scanning electron microscopy",

author = "Carol Trager-Cowan and Aeshah Alasmari and William Avis and Jochen Bruckbauer and Edwards, {Paul R} and Gergely Ferenczi and Benjamin Hourahine and Almpes Kotzai and Simon Kraeusel and Gunnar Kusch and Martin, {Robert W} and Ryan McDermott and Naresh Gunasekar and M. Nouf-Allehiani and Elena Pascal and David Thomson and Stefano Vespucci and Smith, {Matthew David} and Parbrook, {Peter J} and Johannes Enslin and Frank Mehnke and Christian Kuhn and Tim Wernicke and Michael Kneissl and Sylvia Hagedorn and Arne Knauer and Sebastian Walde and Markus Weyers and Pierre-Marie Coulon and Philip Shields and J. Bai and Y. Gong and Ling Jiu and Y. Zhang and Richard Smith and Tao Wang and Aimo Winkelmann",

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month = mar,

day = "25",

doi = "10.1088/1361-6641/ab75a5",

language = "English",

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journal = "Semiconductor Science and Technology",

issn = "0268-1242",

publisher = "IOP Publishing Ltd.",

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Trager-Cowan, C, Alasmari, A, Avis, W, Bruckbauer, J , Edwards, PR, Ferenczi, G, Hourahine, B, Kotzai, A, Kraeusel, S, Kusch, G, Martin, RW , McDermott, R, Gunasekar, N, Nouf-Allehiani, M, Pascal, E, Thomson, D, Vespucci, S, Smith, MD, Parbrook, PJ, Enslin, J, Mehnke, F, Kuhn, C, Wernicke, T, Kneissl, M, Hagedorn, S, Knauer, A, Walde, S, Weyers, M, Coulon, P-M, Shields, P, Bai, J, Gong, Y, Jiu, L, Zhang, Y, Smith, R, Wang, T & Winkelmann, A 2020, 'Structural and luminescence imaging and characterisation of semiconductors in the scanning electron microscope', Semiconductor Science and Technology, vol. 35, no. 5, 054001. https://doi.org/10.1088/1361-6641/ab75a5

TY - JOUR

T1 - Structural and luminescence imaging and characterisation of semiconductors in the scanning electron microscope

AU - Trager-Cowan, Carol

AU - Alasmari, Aeshah

AU - Avis, William

AU - Bruckbauer, Jochen

AU - Edwards, Paul R

AU - Ferenczi, Gergely

AU - Hourahine, Benjamin

AU - Kotzai, Almpes

AU - Kraeusel, Simon

AU - Kusch, Gunnar

AU - Martin, Robert W

AU - McDermott, Ryan

AU - Gunasekar, Naresh

AU - Nouf-Allehiani, M.

AU - Pascal, Elena

AU - Thomson, David

AU - Vespucci, Stefano

AU - Smith, Matthew David

AU - Parbrook, Peter J

AU - Enslin, Johannes

AU - Mehnke, Frank

AU - Kuhn, Christian

AU - Wernicke, Tim

AU - Kneissl, Michael

AU - Hagedorn, Sylvia

AU - Knauer, Arne

AU - Walde, Sebastian

AU - Weyers, Markus

AU - Coulon, Pierre-Marie

AU - Shields, Philip

AU - Bai, J.

AU - Gong, Y.

AU - Jiu, Ling

AU - Zhang, Y.

AU - Smith, Richard

AU - Wang, Tao

AU - Winkelmann, Aimo

PY - 2020/3/25

Y1 - 2020/3/25

N2 - The scanning electron microscopy techniques of electron backscatter diffraction (EBSD), electron channelling contrast imaging (ECCI) and cathodoluminescence (CL) hyperspectral imaging provide complementary information on the structural and luminescence properties of materials rapidly and non-destructively, with a spatial resolution of tens of nanometres. EBSD provides crystal orientation, crystal phase and strain analysis, whilst ECCI is used to determine the planar distribution of extended defects over a large area of a given sample. CL reveals the influence of crystal structure, composition and strain on intrinsic luminescence and/or reveals defect-related luminescence. Dark features are also observed in CL images where carrier recombination at defects is non-radiative. The combination of these techniques is a powerful approach to clarifying the role of crystallography and extended defects on a material's light emission properties. Here we describe the EBSD, ECCI and CL techniques and illustrate their use for investigating the structural and light emitting properties of UV-emitting nitride semiconductor structures. We discuss our investigations of the type, density and distribution of defects in GaN, AlN and AlGaN thin films and also discuss the determination of the polarity of GaN nanowires.

AB - The scanning electron microscopy techniques of electron backscatter diffraction (EBSD), electron channelling contrast imaging (ECCI) and cathodoluminescence (CL) hyperspectral imaging provide complementary information on the structural and luminescence properties of materials rapidly and non-destructively, with a spatial resolution of tens of nanometres. EBSD provides crystal orientation, crystal phase and strain analysis, whilst ECCI is used to determine the planar distribution of extended defects over a large area of a given sample. CL reveals the influence of crystal structure, composition and strain on intrinsic luminescence and/or reveals defect-related luminescence. Dark features are also observed in CL images where carrier recombination at defects is non-radiative. The combination of these techniques is a powerful approach to clarifying the role of crystallography and extended defects on a material's light emission properties. Here we describe the EBSD, ECCI and CL techniques and illustrate their use for investigating the structural and light emitting properties of UV-emitting nitride semiconductor structures. We discuss our investigations of the type, density and distribution of defects in GaN, AlN and AlGaN thin films and also discuss the determination of the polarity of GaN nanowires.

KW - EBSD

KW - nitride

KW - scanning electron microscopy

U2 - 10.1088/1361-6641/ab75a5

DO - 10.1088/1361-6641/ab75a5

M3 - Article

SN - 0268-1242

VL - 35

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 5

M1 - 054001

ER -

Structural and luminescence imaging and characterisation of semiconductors in the scanning electron microscope

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