Abstract
| Language | English |
|---|---|
| Pages | 6977-6991 |
| Number of pages | 14 |
| Journal | Journal of Physics: Condensed Matter |
| Volume | 13 |
| Issue number | 32 |
| DOIs | |
| Publication status | Published - 13 Aug 2001 |
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Keywords
- InGaN
- light-emitting devices
- x-ray diffraction
- nanoscience
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Structural analysis of InGaN epilayers. / O'Donnell, K.P.; Mosselmans, J.F.W.; Martin, R.W.; Pereira, S.; White, M.E.
In: Journal of Physics: Condensed Matter, Vol. 13, No. 32, 13.08.2001, p. 6977-6991.Research output: Contribution to journal › Article
TY - JOUR
T1 - Structural analysis of InGaN epilayers
AU - O'Donnell, K.P.
AU - Mosselmans, J.F.W.
AU - Martin, R.W.
AU - Pereira, S.
AU - White, M.E.
PY - 2001/8/13
Y1 - 2001/8/13
N2 - The structural properties of InGaN have attracted interest on account of the recent widespread use of the material in visible light-emitting devices. A key topic has been the indirect determination of the composition by x-ray diffraction (XRD). We examine critically the several levels of approximation involved in this procedure. It is shown by extended x-ray absorption fine structure (EXAFS) measurements that the local structure of InGaN is independent of the composition, in the range of InN fraction, from about 15 to 40%, that corresponds to blue to infrared light emission from this material. EXAFSdetermined ratios of the numbers of indium and gallium atoms in the first metal co-ordination shell, M1, show very good agreement with the composition measured by established techniques, both structural and chemical, on similar samples. On the other hand, the atomic separations deviate markedly from values calculated using Vegard's law. In particular, the average radial separations, In-N1 = 2.11(2) î.. and In-M1 = 3.28(3) î.., do not vary significantly with In/Ga ratio in the examined composition range. We conclude with some brief comments on the uncertain but challenging topic of InGaN nanostructure.
AB - The structural properties of InGaN have attracted interest on account of the recent widespread use of the material in visible light-emitting devices. A key topic has been the indirect determination of the composition by x-ray diffraction (XRD). We examine critically the several levels of approximation involved in this procedure. It is shown by extended x-ray absorption fine structure (EXAFS) measurements that the local structure of InGaN is independent of the composition, in the range of InN fraction, from about 15 to 40%, that corresponds to blue to infrared light emission from this material. EXAFSdetermined ratios of the numbers of indium and gallium atoms in the first metal co-ordination shell, M1, show very good agreement with the composition measured by established techniques, both structural and chemical, on similar samples. On the other hand, the atomic separations deviate markedly from values calculated using Vegard's law. In particular, the average radial separations, In-N1 = 2.11(2) î.. and In-M1 = 3.28(3) î.., do not vary significantly with In/Ga ratio in the examined composition range. We conclude with some brief comments on the uncertain but challenging topic of InGaN nanostructure.
KW - InGaN
KW - light-emitting devices
KW - x-ray diffraction
KW - nanoscience
UR - http://dx.doi.org/10.1088/0953-8984/13/32/307
U2 - 10.1088/0953-8984/13/32/307
DO - 10.1088/0953-8984/13/32/307
M3 - Article
VL - 13
SP - 6977
EP - 6991
JO - Journal of Physics: Condensed Matter
T2 - Journal of Physics: Condensed Matter
JF - Journal of Physics: Condensed Matter
SN - 0953-8984
IS - 32
ER -