Structural analysis of InGaN epilayers

K.P. O'Donnell, J.F.W. Mosselmans, R.W. Martin, S. Pereira, M.E. White

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The structural properties of InGaN have attracted interest on account of the recent widespread use of the material in visible light-emitting devices. A key topic has been the indirect determination of the composition by x-ray diffraction (XRD). We examine critically the several levels of approximation involved in this procedure. It is shown by extended x-ray absorption fine structure (EXAFS) measurements that the local structure of InGaN is independent of the composition, in the range of InN fraction, from about 15 to 40%, that corresponds to blue to infrared light emission from this material. EXAFSdetermined ratios of the numbers of indium and gallium atoms in the first metal co-ordination shell, M1, show very good agreement with the composition measured by established techniques, both structural and chemical, on similar samples. On the other hand, the atomic separations deviate markedly from values calculated using Vegard's law. In particular, the average radial separations, In-N1 = 2.11(2) î.. and In-M1 = 3.28(3) î.., do not vary significantly with In/Ga ratio in the examined composition range. We conclude with some brief comments on the uncertain but challenging topic of InGaN nanostructure.
Original languageEnglish
Pages (from-to)6977-6991
Number of pages14
JournalJournal of Physics: Condensed Matter
Issue number32
Publication statusPublished - 13 Aug 2001


  • InGaN
  • light-emitting devices
  • x-ray diffraction
  • nanoscience


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