Strongly cavity-enhanced spontaneous emission from silicon-vacancy centers in diamond

Jingyuan Linda Zhang, Shuo Sun, Michael J. Burek, Constantin Dory, Yan-Kai Tzeng, Kevin A. Fischer, Yousif Kelaita, Konstantinos G. Lagoudakis, Marina Radulaski, Zhi-Xun Shen, Nicholas A. Melosh, Steven Chu, Marko Lončar, Jelena Vučković

Research output: Contribution to journalArticle

29 Citations (Scopus)
7 Downloads (Pure)

Abstract

Quantum emitters are an integral component for a broad range of quantum technologies, including quantum communication, quantum repeaters, and linear optical quantum computation. Solid-state color centers are promising candidates for scalable quantum optics due to their long coherence time and small inhomogeneous broadening. However, once excited, color centers often decay through phonon-assisted processes, limiting the efficiency of single-photon generation and photon-mediated entanglement generation. Herein, we demonstrate strong enhancement of spontaneous emission rate of a single silicon-vacancy center in diamond embedded within a monolithic optical cavity, reaching a regime in which the excited-state lifetime is dominated by spontaneous emission into the cavity mode. We observe 10-fold lifetime reduction and 42-fold enhancement in emission intensity when the cavity is tuned into resonance with the optical transition of a single silicon-vacancy center, corresponding to 90% of the excited-state energy decay occurring through spontaneous emission into the cavity mode. We also demonstrate the largest coupling strength (g/2π = 4.9 ± 0.3 GHz) and cooperativity (C = 1.4) to date for color-center-based cavity quantum electrodynamics systems, bringing the system closer to the strong coupling regime.
Original languageEnglish
Pages (from-to)1360-1365
Number of pages6
JournalNano Letters
Volume18
Issue number2
Early online date29 Jan 2018
DOIs
Publication statusPublished - 1 Feb 2018

Fingerprint

Color centers
Diamond
Spontaneous emission
Silicon
spontaneous emission
Vacancies
Diamonds
diamonds
Excited states
cavities
color centers
silicon
Photons
Quantum optics
Quantum communication
Quantum computers
Optical transitions
Telecommunication repeaters
Electrodynamics
life (durability)

Keywords

  • purcell enhancement
  • single photon generation
  • defect center materials
  • diamond
  • silicon vacancy center
  • nanophotonics

Cite this

Zhang, J. L., Sun, S., Burek, M. J., Dory, C., Tzeng, Y-K., Fischer, K. A., ... Vučković, J. (2018). Strongly cavity-enhanced spontaneous emission from silicon-vacancy centers in diamond. Nano Letters, 18(2), 1360-1365. https://doi.org/10.1021/acs.nanolett.7b05075
Zhang, Jingyuan Linda ; Sun, Shuo ; Burek, Michael J. ; Dory, Constantin ; Tzeng, Yan-Kai ; Fischer, Kevin A. ; Kelaita, Yousif ; Lagoudakis, Konstantinos G. ; Radulaski, Marina ; Shen, Zhi-Xun ; Melosh, Nicholas A. ; Chu, Steven ; Lončar, Marko ; Vučković, Jelena. / Strongly cavity-enhanced spontaneous emission from silicon-vacancy centers in diamond. In: Nano Letters. 2018 ; Vol. 18, No. 2. pp. 1360-1365.
@article{5ed69a58ba5d4c3da9c65c187051d10c,
title = "Strongly cavity-enhanced spontaneous emission from silicon-vacancy centers in diamond",
abstract = "Quantum emitters are an integral component for a broad range of quantum technologies, including quantum communication, quantum repeaters, and linear optical quantum computation. Solid-state color centers are promising candidates for scalable quantum optics due to their long coherence time and small inhomogeneous broadening. However, once excited, color centers often decay through phonon-assisted processes, limiting the efficiency of single-photon generation and photon-mediated entanglement generation. Herein, we demonstrate strong enhancement of spontaneous emission rate of a single silicon-vacancy center in diamond embedded within a monolithic optical cavity, reaching a regime in which the excited-state lifetime is dominated by spontaneous emission into the cavity mode. We observe 10-fold lifetime reduction and 42-fold enhancement in emission intensity when the cavity is tuned into resonance with the optical transition of a single silicon-vacancy center, corresponding to 90{\%} of the excited-state energy decay occurring through spontaneous emission into the cavity mode. We also demonstrate the largest coupling strength (g/2π = 4.9 ± 0.3 GHz) and cooperativity (C = 1.4) to date for color-center-based cavity quantum electrodynamics systems, bringing the system closer to the strong coupling regime.",
keywords = "purcell enhancement, single photon generation, defect center materials, diamond, silicon vacancy center, nanophotonics",
author = "Zhang, {Jingyuan Linda} and Shuo Sun and Burek, {Michael J.} and Constantin Dory and Yan-Kai Tzeng and Fischer, {Kevin A.} and Yousif Kelaita and Lagoudakis, {Konstantinos G.} and Marina Radulaski and Zhi-Xun Shen and Melosh, {Nicholas A.} and Steven Chu and Marko Lončar and Jelena Vučković",
year = "2018",
month = "2",
day = "1",
doi = "10.1021/acs.nanolett.7b05075",
language = "English",
volume = "18",
pages = "1360--1365",
journal = "Nano Letters",
issn = "1530-6984",
number = "2",

}

Zhang, JL, Sun, S, Burek, MJ, Dory, C, Tzeng, Y-K, Fischer, KA, Kelaita, Y, Lagoudakis, KG, Radulaski, M, Shen, Z-X, Melosh, NA, Chu, S, Lončar, M & Vučković, J 2018, 'Strongly cavity-enhanced spontaneous emission from silicon-vacancy centers in diamond', Nano Letters, vol. 18, no. 2, pp. 1360-1365. https://doi.org/10.1021/acs.nanolett.7b05075

Strongly cavity-enhanced spontaneous emission from silicon-vacancy centers in diamond. / Zhang, Jingyuan Linda; Sun, Shuo; Burek, Michael J.; Dory, Constantin; Tzeng, Yan-Kai; Fischer, Kevin A.; Kelaita, Yousif; Lagoudakis, Konstantinos G.; Radulaski, Marina; Shen, Zhi-Xun; Melosh, Nicholas A.; Chu, Steven; Lončar, Marko; Vučković, Jelena.

In: Nano Letters, Vol. 18, No. 2, 01.02.2018, p. 1360-1365.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Strongly cavity-enhanced spontaneous emission from silicon-vacancy centers in diamond

AU - Zhang, Jingyuan Linda

AU - Sun, Shuo

AU - Burek, Michael J.

AU - Dory, Constantin

AU - Tzeng, Yan-Kai

AU - Fischer, Kevin A.

AU - Kelaita, Yousif

AU - Lagoudakis, Konstantinos G.

AU - Radulaski, Marina

AU - Shen, Zhi-Xun

AU - Melosh, Nicholas A.

AU - Chu, Steven

AU - Lončar, Marko

AU - Vučković, Jelena

PY - 2018/2/1

Y1 - 2018/2/1

N2 - Quantum emitters are an integral component for a broad range of quantum technologies, including quantum communication, quantum repeaters, and linear optical quantum computation. Solid-state color centers are promising candidates for scalable quantum optics due to their long coherence time and small inhomogeneous broadening. However, once excited, color centers often decay through phonon-assisted processes, limiting the efficiency of single-photon generation and photon-mediated entanglement generation. Herein, we demonstrate strong enhancement of spontaneous emission rate of a single silicon-vacancy center in diamond embedded within a monolithic optical cavity, reaching a regime in which the excited-state lifetime is dominated by spontaneous emission into the cavity mode. We observe 10-fold lifetime reduction and 42-fold enhancement in emission intensity when the cavity is tuned into resonance with the optical transition of a single silicon-vacancy center, corresponding to 90% of the excited-state energy decay occurring through spontaneous emission into the cavity mode. We also demonstrate the largest coupling strength (g/2π = 4.9 ± 0.3 GHz) and cooperativity (C = 1.4) to date for color-center-based cavity quantum electrodynamics systems, bringing the system closer to the strong coupling regime.

AB - Quantum emitters are an integral component for a broad range of quantum technologies, including quantum communication, quantum repeaters, and linear optical quantum computation. Solid-state color centers are promising candidates for scalable quantum optics due to their long coherence time and small inhomogeneous broadening. However, once excited, color centers often decay through phonon-assisted processes, limiting the efficiency of single-photon generation and photon-mediated entanglement generation. Herein, we demonstrate strong enhancement of spontaneous emission rate of a single silicon-vacancy center in diamond embedded within a monolithic optical cavity, reaching a regime in which the excited-state lifetime is dominated by spontaneous emission into the cavity mode. We observe 10-fold lifetime reduction and 42-fold enhancement in emission intensity when the cavity is tuned into resonance with the optical transition of a single silicon-vacancy center, corresponding to 90% of the excited-state energy decay occurring through spontaneous emission into the cavity mode. We also demonstrate the largest coupling strength (g/2π = 4.9 ± 0.3 GHz) and cooperativity (C = 1.4) to date for color-center-based cavity quantum electrodynamics systems, bringing the system closer to the strong coupling regime.

KW - purcell enhancement

KW - single photon generation

KW - defect center materials

KW - diamond

KW - silicon vacancy center

KW - nanophotonics

U2 - 10.1021/acs.nanolett.7b05075

DO - 10.1021/acs.nanolett.7b05075

M3 - Article

VL - 18

SP - 1360

EP - 1365

JO - Nano Letters

JF - Nano Letters

SN - 1530-6984

IS - 2

ER -

Zhang JL, Sun S, Burek MJ, Dory C, Tzeng Y-K, Fischer KA et al. Strongly cavity-enhanced spontaneous emission from silicon-vacancy centers in diamond. Nano Letters. 2018 Feb 1;18(2):1360-1365. https://doi.org/10.1021/acs.nanolett.7b05075