Strong light-matter coupling is demonstrated at low temperature in an ultrathin GaN microcavity fabricated using two silica/zirconia Bragg mirrors, in addition to a three-period epitaxial (Al,Ga)N mirror serving as an etch stop and assuring good quality of the overgrown GaN. The λ/2 cavity is grown by molecular beam epitaxy on a Si substrate. Analysis of angle-resolved data reveal key features of the strong coupling regime in both reflectivity and transmission spectra at 5 K: anticrossing with a normal mode splitting of 43±2 meV and 56±2 meV for reflectivity and transmission, respectively, and narrowing of the lower polariton linewidth near resonance.
- semiconductor microcavities
- light-matter coupling
- double dielectric mirror
Bejtka, K., Reveret, F., Martin, R. W., Edwards, P., Vasson, A., Leymarie, J., Sellers, I. R., & Duboz, J. Y. (2008). Strong light-matter coupling in ultrathin double dielectric mirror GaN microcavities. Applied Physics Letters, 92(24), . https://doi.org/10.1063/1.2944263