Abstract
Strong light-matter coupling is demonstrated at low temperature in an ultrathin GaN microcavity fabricated using two silica/zirconia Bragg mirrors, in addition to a three-period epitaxial (Al,Ga)N mirror serving as an etch stop and assuring good quality of the overgrown GaN. The λ/2 cavity is grown by molecular beam epitaxy on a Si substrate. Analysis of angle-resolved data reveal key features of the strong coupling regime in both reflectivity and transmission spectra at 5 K: anticrossing with a normal mode splitting of 43±2 meV and 56±2 meV for reflectivity and transmission, respectively, and narrowing of the lower polariton linewidth near resonance.
Original language | English |
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Article number | 241105 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 92 |
Issue number | 24 |
DOIs | |
Publication status | Published - 16 Jun 2008 |
Keywords
- semiconductor microcavities
- photoluminescence
- light-matter coupling
- double dielectric mirror
- GaN