Strong light-matter coupling in ultrathin double dielectric mirror GaN microcavities

K. Bejtka, F. Reveret, R.W. Martin, Paul Edwards, A. Vasson, J. Leymarie, I.R. Sellers, J.Y. Duboz

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Strong light-matter coupling is demonstrated at low temperature in an ultrathin GaN microcavity fabricated using two silica/zirconia Bragg mirrors, in addition to a three-period epitaxial (Al,Ga)N mirror serving as an etch stop and assuring good quality of the overgrown GaN. The λ/2 cavity is grown by molecular beam epitaxy on a Si substrate. Analysis of angle-resolved data reveal key features of the strong coupling regime in both reflectivity and transmission spectra at 5 K: anticrossing with a normal mode splitting of 43±2 meV and 56±2 meV for reflectivity and transmission, respectively, and narrowing of the lower polariton linewidth near resonance.
Original languageEnglish
Article number241105
Number of pages3
JournalApplied Physics Letters
Issue number24
Publication statusPublished - 16 Jun 2008


  • semiconductor microcavities
  • photoluminescence
  • light-matter coupling
  • double dielectric mirror
  • GaN


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