Strong light-matter coupling in ultrathin double dielectric mirror GaN microcavities

K. Bejtka, F. Reveret, R.W. Martin, Paul Edwards, A. Vasson, J. Leymarie, I.R. Sellers, J.Y. Duboz

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Abstract

Strong light-matter coupling is demonstrated at low temperature in an ultrathin GaN microcavity fabricated using two silica/zirconia Bragg mirrors, in addition to a three-period epitaxial (Al,Ga)N mirror serving as an etch stop and assuring good quality of the overgrown GaN. The λ/2 cavity is grown by molecular beam epitaxy on a Si substrate. Analysis of angle-resolved data reveal key features of the strong coupling regime in both reflectivity and transmission spectra at 5 K: anticrossing with a normal mode splitting of 43±2 meV and 56±2 meV for reflectivity and transmission, respectively, and narrowing of the lower polariton linewidth near resonance.
Original languageEnglish
Article number241105
Number of pages3
JournalApplied Physics Letters
Volume92
Issue number24
DOIs
Publication statusPublished - 16 Jun 2008

Keywords

  • semiconductor microcavities
  • photoluminescence
  • light-matter coupling
  • double dielectric mirror
  • GaN

Cite this

Bejtka, K., Reveret, F., Martin, R. W., Edwards, P., Vasson, A., Leymarie, J., Sellers, I. R., & Duboz, J. Y. (2008). Strong light-matter coupling in ultrathin double dielectric mirror GaN microcavities. Applied Physics Letters, 92(24), [241105]. https://doi.org/10.1063/1.2944263