Strong light-matter coupling in ultrathin double dielectric mirror GaN microcavities

K. Bejtka; F. Reveret; R.W. Martin; Paul Edwards; A. Vasson; J. Leymarie; I.R. Sellers; J.Y. Duboz

doi:10.1063/1.2944263

Strong light-matter coupling in ultrathin double dielectric mirror GaN microcavities

K. Bejtka, F. Reveret, R.W. Martin, Paul Edwards, A. Vasson, J. Leymarie, I.R. Sellers, J.Y. Duboz

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Abstract

Strong light-matter coupling is demonstrated at low temperature in an ultrathin GaN microcavity fabricated using two silica/zirconia Bragg mirrors, in addition to a three-period epitaxial (Al,Ga)N mirror serving as an etch stop and assuring good quality of the overgrown GaN. The λ/2 cavity is grown by molecular beam epitaxy on a Si substrate. Analysis of angle-resolved data reveal key features of the strong coupling regime in both reflectivity and transmission spectra at 5 K: anticrossing with a normal mode splitting of 43±2 meV and 56±2 meV for reflectivity and transmission, respectively, and narrowing of the lower polariton linewidth near resonance.

Original language	English
Article number	241105
Number of pages	3
Journal	Applied Physics Letters
Volume	92
Issue number	24
DOIs	https://doi.org/10.1063/1.2944263
Publication status	Published - 16 Jun 2008

Keywords

semiconductor microcavities
photoluminescence
light-matter coupling
double dielectric mirror
GaN

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Bejtka2008APL92Final published version, 339 KB

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@article{b7e33e354d0c40e1a611e18f9e19a696,

title = "Strong light-matter coupling in ultrathin double dielectric mirror GaN microcavities",

abstract = "Strong light-matter coupling is demonstrated at low temperature in an ultrathin GaN microcavity fabricated using two silica/zirconia Bragg mirrors, in addition to a three-period epitaxial (Al,Ga)N mirror serving as an etch stop and assuring good quality of the overgrown GaN. The λ/2 cavity is grown by molecular beam epitaxy on a Si substrate. Analysis of angle-resolved data reveal key features of the strong coupling regime in both reflectivity and transmission spectra at 5 K: anticrossing with a normal mode splitting of 43±2 meV and 56±2 meV for reflectivity and transmission, respectively, and narrowing of the lower polariton linewidth near resonance.",

keywords = "semiconductor microcavities, photoluminescence, light-matter coupling, double dielectric mirror, GaN",

author = "K. Bejtka and F. Reveret and R.W. Martin and Paul Edwards and A. Vasson and J. Leymarie and I.R. Sellers and J.Y. Duboz",

note = "Strathprints' policy is to record up to 8 authors per publication, plus any additional authors based at the University of Strathclyde. More authors may be listed on the official publication than appear in the Strathprints' record.",

year = "2008",

month = jun,

day = "16",

doi = "10.1063/1.2944263",

language = "English",

volume = "92",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "24",

}

TY - JOUR

T1 - Strong light-matter coupling in ultrathin double dielectric mirror GaN microcavities

AU - Bejtka, K.

AU - Reveret, F.

AU - Martin, R.W.

AU - Edwards, Paul

AU - Vasson, A.

AU - Leymarie, J.

AU - Sellers, I.R.

AU - Duboz, J.Y.

N1 - Strathprints' policy is to record up to 8 authors per publication, plus any additional authors based at the University of Strathclyde. More authors may be listed on the official publication than appear in the Strathprints' record.

PY - 2008/6/16

Y1 - 2008/6/16

N2 - Strong light-matter coupling is demonstrated at low temperature in an ultrathin GaN microcavity fabricated using two silica/zirconia Bragg mirrors, in addition to a three-period epitaxial (Al,Ga)N mirror serving as an etch stop and assuring good quality of the overgrown GaN. The λ/2 cavity is grown by molecular beam epitaxy on a Si substrate. Analysis of angle-resolved data reveal key features of the strong coupling regime in both reflectivity and transmission spectra at 5 K: anticrossing with a normal mode splitting of 43±2 meV and 56±2 meV for reflectivity and transmission, respectively, and narrowing of the lower polariton linewidth near resonance.

AB - Strong light-matter coupling is demonstrated at low temperature in an ultrathin GaN microcavity fabricated using two silica/zirconia Bragg mirrors, in addition to a three-period epitaxial (Al,Ga)N mirror serving as an etch stop and assuring good quality of the overgrown GaN. The λ/2 cavity is grown by molecular beam epitaxy on a Si substrate. Analysis of angle-resolved data reveal key features of the strong coupling regime in both reflectivity and transmission spectra at 5 K: anticrossing with a normal mode splitting of 43±2 meV and 56±2 meV for reflectivity and transmission, respectively, and narrowing of the lower polariton linewidth near resonance.

KW - semiconductor microcavities

KW - photoluminescence

KW - light-matter coupling

KW - double dielectric mirror

KW - GaN

U2 - 10.1063/1.2944263

DO - 10.1063/1.2944263

M3 - Article

SN - 0003-6951

VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

M1 - 241105

ER -

Strong light-matter coupling in ultrathin double dielectric mirror GaN microcavities

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Keywords

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