Strong light-matter coupling in bulk GaN-microcavities with double dielectric mirrors fabricated by two different methods

F. Reveret, K. Bejtka, P. R. Edwards, S. Chenot, I. R. Sellers, P. Disseix, A. Vasson, J. Leymarie, J. Y. Duboz, M. Leroux, F. Semond, Robert Martin

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Abstract

Two routes for the fabrication of bulk GaN microcavities embedded between two dielectric mirrors are described, and the optical properties of the microcavities thus obtained are compared. In both cases, the GaN active layer is grown by molecular beam epitaxy on (111) Si, allowing use of selective etching to remove the substrate. In the first case, a three period Al0.2Ga0.8N / AlN Bragg mirror followed by a lambda/2 GaN cavity are grown directly on the Si. In the second case, a crack-free 2,mu m thick GaN layer is grown, and progressively thinned to a final thickness of lambda. Both devices work in the strong coupling regime at low temperature, as evidenced by angle-dependent reflectivity or transmission experiments. However, strong light-matter coupling in emission at room temperature is observed only for the second one. This is related to the poor optoelectronic quality of the active layer of the first device, due to its growth only 250 nm above the Si substrate and its related high defect density. The reflectivity spectra of the microcavities are well accounted for by using transfer matrix calculations. (C) 2010 American Institute of Physics. [doi:10.1063/1.3477450]

Original languageEnglish
Article number043524
Number of pages6
JournalJournal of Applied Physics
Volume108
Issue number4
DOIs
Publication statusPublished - 15 Aug 2010

Keywords

  • semiconductor microcavities
  • laser
  • aluminium compounds
  • distributed Bragg reflectors
  • gallium compounds
  • molecular beam epitaxial growth
  • photoluminescence
  • semiconductor growth
  • wide band gap semiconductors

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