Stress-induced formation mechanism of stacking fault tetrahedra in nano-cutting of single crystal copper

Quanlong Wang, Qingshun Bai, Jiaxuan Chen*, Yongbo Guo, Wenkun Xie

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

59 Citations (Scopus)

Abstract

Stacking fault tetrahedra commonly existed in subsurface of deformed face center cubic metals, has great influence on machining precision and surface roughness in nano-cutting. Here we report, a stacking fault tetrahedra is formed in subsurface of workpiece during nano-cutting. The variation of cutting force and subsurface defects distribution are studied by using molecular dynamics simulation. The stress distribution is investigated which is calculated by virial stress and analyzed by static compression. The result shows that the cutting force has a rapidly increase in the initial stage and fluctuates at their equilibrium position at stable cutting stage, which is because of the energy accumulation and release leading to the dislocation emission. A typically stacking fault tetrahedra is nucleated in the subsurface defect layer, which is induced by the complex tension and compression stress. The stress-induced mechanism of stacking fault tetrahedra formation is investigated by atomic scale evolution and local stress distribution.

Original languageEnglish
Pages (from-to)1153-1160
Number of pages8
JournalApplied Surface Science
Volume355
DOIs
Publication statusPublished - 15 Nov 2015

Funding

The authors gratefully acknowledge financial supports of the National Natural Science Foundation of China (grant nos. 51405111 and 51475108 ). The authors would like to thank the valuable inputs from anonymous reviewers for improving the quality of this manuscript.

Keywords

  • dislocation nucleation
  • nolecular dynamics
  • nano-cutting
  • stacking fault tetrahedra
  • crystal cutting
  • dislocations (crystals)
  • stress concentration

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