Stress distribution of GaN layer grown on micro-pillar patterned GaN templates

S. Nagarajan, O. Svensk, M. Ali, G. Naresh-Kumar, Carol Trager-Cowan, S. Suihkonen, M. Sopanen, H. Lipsanen

Research output: Contribution to journalArticle

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Abstract

High-resolution Raman mapping of the stress distribution in an etched GaN micro-pillar template and a 5 μm thick GaN layer grown on a micro-pillar patterned GaN template is investigated. Raman mapping of the E2 (high) phonon shows differences in stress between the coalescing boundary, the top surface of the pillar region and around the GaN micro-pillar. Increased compressive stress is observed at the coalescing boundary of two adjacent GaN micro-pillars, when compared to the laterally grown GaN regions. The electron channeling contrast image reveals the reduction of threading dislocation density in the GaN layer grown on the micro-pillar patterned GaN template.
LanguageEnglish
Article number012102
Number of pages4
JournalApplied Physics Letters
Volume103
Issue number1
Early online date3 Jul 2013
DOIs
Publication statusPublished - 2013

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stress distribution
templates
coalescing
image contrast
high resolution
electrons

Keywords

  • channelling
  • wide band gap semiconductors
  • stress analysis
  • semiconductor epitaxial layers
  • Raman spectra
  • phonons
  • III-V semiconductors
  • gallium compounds
  • dislocation density
  • compressive strength

Cite this

Nagarajan, S. ; Svensk, O. ; Ali, M. ; Naresh-Kumar, G. ; Trager-Cowan, Carol ; Suihkonen, S. ; Sopanen, M. ; Lipsanen, H. / Stress distribution of GaN layer grown on micro-pillar patterned GaN templates. In: Applied Physics Letters. 2013 ; Vol. 103, No. 1.
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abstract = "High-resolution Raman mapping of the stress distribution in an etched GaN micro-pillar template and a 5 μm thick GaN layer grown on a micro-pillar patterned GaN template is investigated. Raman mapping of the E2 (high) phonon shows differences in stress between the coalescing boundary, the top surface of the pillar region and around the GaN micro-pillar. Increased compressive stress is observed at the coalescing boundary of two adjacent GaN micro-pillars, when compared to the laterally grown GaN regions. The electron channeling contrast image reveals the reduction of threading dislocation density in the GaN layer grown on the micro-pillar patterned GaN template.",
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Stress distribution of GaN layer grown on micro-pillar patterned GaN templates. / Nagarajan, S.; Svensk, O.; Ali, M.; Naresh-Kumar, G.; Trager-Cowan, Carol; Suihkonen, S.; Sopanen, M.; Lipsanen, H.

In: Applied Physics Letters, Vol. 103, No. 1, 012102, 2013.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Stress distribution of GaN layer grown on micro-pillar patterned GaN templates

AU - Nagarajan, S.

AU - Svensk, O.

AU - Ali, M.

AU - Naresh-Kumar, G.

AU - Trager-Cowan, Carol

AU - Suihkonen, S.

AU - Sopanen, M.

AU - Lipsanen, H.

PY - 2013

Y1 - 2013

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AB - High-resolution Raman mapping of the stress distribution in an etched GaN micro-pillar template and a 5 μm thick GaN layer grown on a micro-pillar patterned GaN template is investigated. Raman mapping of the E2 (high) phonon shows differences in stress between the coalescing boundary, the top surface of the pillar region and around the GaN micro-pillar. Increased compressive stress is observed at the coalescing boundary of two adjacent GaN micro-pillars, when compared to the laterally grown GaN regions. The electron channeling contrast image reveals the reduction of threading dislocation density in the GaN layer grown on the micro-pillar patterned GaN template.

KW - channelling

KW - wide band gap semiconductors

KW - stress analysis

KW - semiconductor epitaxial layers

KW - Raman spectra

KW - phonons

KW - III-V semiconductors

KW - gallium compounds

KW - dislocation density

KW - compressive strength

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