Stimulated emission and optical properties of solid solutions of Cu(In,Ga)Se2 direct band gap semiconductors

I. E. Svitsiankou, V. N. Pavlovskii, E. V. Lutsenko, G. P. Yablonskii, A. V. Mudryi, O. M. Borodavchenko, V. D. Zhivulko, M. V. Yakushev, R. Martin

Research output: Contribution to journalArticle

Abstract

Stimulated emission, optical properties, and structural characteristics of non-irradiated and proton-irradiated Cu(In,Ga)Se2 thin films deposited on soda lime glass substrates using co-evaporation of elements in a multistage process were investigated. X-ray diffraction analysis, scanning electron microscopy, X-ray spectral analysis with energy dispersion, low-temperature photoluminescence, optical transmittance and reflectance were used to study the films. Stimulated emission at low temperatures of ~20 K was found in non-irradiated and proton-irradiated Cu(In,Ga)Se2 thin films upon excitation by laser pulses of nanosecond duration with a threshold power density of ~20 kW/cm2. It was shown that the appearance and parameters of the stimulated emission depend strongly on the concentration of ion-induced defects in Cu(In,Ga)Se2 thin films.

LanguageEnglish
Pages267-273
Number of pages7
JournalJournal of Applied Spectroscopy
Volume85
Issue number2
Early online date5 May 2018
DOIs
Publication statusPublished - 31 May 2018

Fingerprint

Stimulated emission
stimulated emission
Solid solutions
Energy gap
solid solutions
Optical properties
Semiconductor materials
optical properties
Thin films
Protons
thin films
protons
Opacity
calcium oxides
Spectrum analysis
X ray diffraction analysis
spectrum analysis
radiant flux density
Laser pulses
transmittance

Keywords

  • Cu(In,Ga)Se
  • defect
  • proton
  • stimulated emission
  • thin film

Cite this

Svitsiankou, I. E., Pavlovskii, V. N., Lutsenko, E. V., Yablonskii, G. P., Mudryi, A. V., Borodavchenko, O. M., ... Martin, R. (2018). Stimulated emission and optical properties of solid solutions of Cu(In,Ga)Se2 direct band gap semiconductors. Journal of Applied Spectroscopy, 85(2), 267-273. https://doi.org/10.1007/s10812-018-0643-3
Svitsiankou, I. E. ; Pavlovskii, V. N. ; Lutsenko, E. V. ; Yablonskii, G. P. ; Mudryi, A. V. ; Borodavchenko, O. M. ; Zhivulko, V. D. ; Yakushev, M. V. ; Martin, R. / Stimulated emission and optical properties of solid solutions of Cu(In,Ga)Se2 direct band gap semiconductors. In: Journal of Applied Spectroscopy. 2018 ; Vol. 85, No. 2. pp. 267-273.
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title = "Stimulated emission and optical properties of solid solutions of Cu(In,Ga)Se2 direct band gap semiconductors",
abstract = "Stimulated emission, optical properties, and structural characteristics of non-irradiated and proton-irradiated Cu(In,Ga)Se2 thin films deposited on soda lime glass substrates using co-evaporation of elements in a multistage process were investigated. X-ray diffraction analysis, scanning electron microscopy, X-ray spectral analysis with energy dispersion, low-temperature photoluminescence, optical transmittance and reflectance were used to study the films. Stimulated emission at low temperatures of ~20 K was found in non-irradiated and proton-irradiated Cu(In,Ga)Se2 thin films upon excitation by laser pulses of nanosecond duration with a threshold power density of ~20 kW/cm2. It was shown that the appearance and parameters of the stimulated emission depend strongly on the concentration of ion-induced defects in Cu(In,Ga)Se2 thin films.",
keywords = "Cu(In,Ga)Se, defect, proton, stimulated emission, thin film",
author = "Svitsiankou, {I. E.} and Pavlovskii, {V. N.} and Lutsenko, {E. V.} and Yablonskii, {G. P.} and Mudryi, {A. V.} and Borodavchenko, {O. M.} and Zhivulko, {V. D.} and Yakushev, {M. V.} and R. Martin",
note = "This output was reproduced in the Russian language in Svitsiankou, I. E., Pavlovskii, V. N., Lutsenko, E. V., Yablonskii, G. P., Mudryi, A. V., Borodavchenko, O. M., ... Martin, R. (2018). СТИМУЛИРОВАННОЕ ИЗЛУЧЕНИЕ И ОПТИЧЕСКИЕ СВОЙСТВА ТВЕРДЫХ РАСТВОРОВ ПРЯМОЗОННЫХ ПОЛУПРОВОДНИКОВ Cu(In,Ga)Se2. Zhurnal Prikladnoi Spektroskopii, 85(2), 248–255.",
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Svitsiankou, IE, Pavlovskii, VN, Lutsenko, EV, Yablonskii, GP, Mudryi, AV, Borodavchenko, OM, Zhivulko, VD, Yakushev, MV & Martin, R 2018, 'Stimulated emission and optical properties of solid solutions of Cu(In,Ga)Se2 direct band gap semiconductors' Journal of Applied Spectroscopy, vol. 85, no. 2, pp. 267-273. https://doi.org/10.1007/s10812-018-0643-3

Stimulated emission and optical properties of solid solutions of Cu(In,Ga)Se2 direct band gap semiconductors. / Svitsiankou, I. E.; Pavlovskii, V. N.; Lutsenko, E. V.; Yablonskii, G. P.; Mudryi, A. V.; Borodavchenko, O. M.; Zhivulko, V. D.; Yakushev, M. V.; Martin, R.

In: Journal of Applied Spectroscopy, Vol. 85, No. 2, 31.05.2018, p. 267-273.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Stimulated emission and optical properties of solid solutions of Cu(In,Ga)Se2 direct band gap semiconductors

AU - Svitsiankou, I. E.

AU - Pavlovskii, V. N.

AU - Lutsenko, E. V.

AU - Yablonskii, G. P.

AU - Mudryi, A. V.

AU - Borodavchenko, O. M.

AU - Zhivulko, V. D.

AU - Yakushev, M. V.

AU - Martin, R.

N1 - This output was reproduced in the Russian language in Svitsiankou, I. E., Pavlovskii, V. N., Lutsenko, E. V., Yablonskii, G. P., Mudryi, A. V., Borodavchenko, O. M., ... Martin, R. (2018). СТИМУЛИРОВАННОЕ ИЗЛУЧЕНИЕ И ОПТИЧЕСКИЕ СВОЙСТВА ТВЕРДЫХ РАСТВОРОВ ПРЯМОЗОННЫХ ПОЛУПРОВОДНИКОВ Cu(In,Ga)Se2. Zhurnal Prikladnoi Spektroskopii, 85(2), 248–255.

PY - 2018/5/31

Y1 - 2018/5/31

N2 - Stimulated emission, optical properties, and structural characteristics of non-irradiated and proton-irradiated Cu(In,Ga)Se2 thin films deposited on soda lime glass substrates using co-evaporation of elements in a multistage process were investigated. X-ray diffraction analysis, scanning electron microscopy, X-ray spectral analysis with energy dispersion, low-temperature photoluminescence, optical transmittance and reflectance were used to study the films. Stimulated emission at low temperatures of ~20 K was found in non-irradiated and proton-irradiated Cu(In,Ga)Se2 thin films upon excitation by laser pulses of nanosecond duration with a threshold power density of ~20 kW/cm2. It was shown that the appearance and parameters of the stimulated emission depend strongly on the concentration of ion-induced defects in Cu(In,Ga)Se2 thin films.

AB - Stimulated emission, optical properties, and structural characteristics of non-irradiated and proton-irradiated Cu(In,Ga)Se2 thin films deposited on soda lime glass substrates using co-evaporation of elements in a multistage process were investigated. X-ray diffraction analysis, scanning electron microscopy, X-ray spectral analysis with energy dispersion, low-temperature photoluminescence, optical transmittance and reflectance were used to study the films. Stimulated emission at low temperatures of ~20 K was found in non-irradiated and proton-irradiated Cu(In,Ga)Se2 thin films upon excitation by laser pulses of nanosecond duration with a threshold power density of ~20 kW/cm2. It was shown that the appearance and parameters of the stimulated emission depend strongly on the concentration of ion-induced defects in Cu(In,Ga)Se2 thin films.

KW - Cu(In,Ga)Se

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KW - proton

KW - stimulated emission

KW - thin film

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UR - https://link.springer.com/journal/10812

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VL - 85

SP - 267

EP - 273

JO - Journal of Applied Spectroscopy

T2 - Journal of Applied Spectroscopy

JF - Journal of Applied Spectroscopy

SN - 0021-9037

IS - 2

ER -

Svitsiankou IE, Pavlovskii VN, Lutsenko EV, Yablonskii GP, Mudryi AV, Borodavchenko OM et al. Stimulated emission and optical properties of solid solutions of Cu(In,Ga)Se2 direct band gap semiconductors. Journal of Applied Spectroscopy. 2018 May 31;85(2):267-273. https://doi.org/10.1007/s10812-018-0643-3