Stimulated emission and optical properties of solid solutions of Cu(In,Ga)Se2 direct band gap semiconductors

I. E. Svitsiankou, V. N. Pavlovskii, E. V. Lutsenko, G. P. Yablonskii, A. V. Mudryi, O. M. Borodavchenko, V. D. Zhivulko, M. V. Yakushev, R. Martin

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Abstract

Stimulated emission, optical properties, and structural characteristics of non-irradiated and proton-irradiated Cu(In,Ga)Se2 thin films deposited on soda lime glass substrates using co-evaporation of elements in a multistage process were investigated. X-ray diffraction analysis, scanning electron microscopy, X-ray spectral analysis with energy dispersion, low-temperature photoluminescence, optical transmittance and reflectance were used to study the films. Stimulated emission at low temperatures of ~20 K was found in non-irradiated and proton-irradiated Cu(In,Ga)Se2 thin films upon excitation by laser pulses of nanosecond duration with a threshold power density of ~20 kW/cm2. It was shown that the appearance and parameters of the stimulated emission depend strongly on the concentration of ion-induced defects in Cu(In,Ga)Se2 thin films.

Original languageEnglish
Pages (from-to)267-273
Number of pages7
JournalJournal of Applied Spectroscopy
Volume85
Issue number2
Early online date5 May 2018
DOIs
Publication statusPublished - 31 May 2018

Keywords

  • Cu(In,Ga)Se
  • defect
  • proton
  • stimulated emission
  • thin film

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    Svitsiankou, I. E., Pavlovskii, V. N., Lutsenko, E. V., Yablonskii, G. P., Mudryi, A. V., Borodavchenko, O. M., Zhivulko, V. D., Yakushev, M. V., & Martin, R. (2018). Stimulated emission and optical properties of solid solutions of Cu(In,Ga)Se2 direct band gap semiconductors. Journal of Applied Spectroscopy, 85(2), 267-273. https://doi.org/10.1007/s10812-018-0643-3