Stimulated emission and lasing in Cu(In,Ga)Se2 thin films

I E Svitsiankou, V N Pavlovskii, EV Lutsenko, G P Yablonskii, A V Mudryi, VD Zhivulko, M V Yakushev, R W Martin

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Abstract

Stimulated emission and lasing in Cu(In,Ga)Se 2 thin films have been demonstrated at a temperature of 20 K using excitation by a nanosecond pulsed N 2 laser with power densities in the range from 2 to 100 kW cm − 2 . Sharp narrowing of the photoluminescence band, superlinear dependence of its intensity on excitation laser power, as well as stabilization of the spectral position and of the full-width at half-maximum of the band were observed in the films at increasing excitation intensity. The stimulated emission threshold was determined to be 20 kW cm − 2 . A gain value of 94 cm − 1 has been estimated using the variable stripe length method. Several sharp laser modes near 1.13 eV were observed above the laser threshold of I thr ~ 50 kW cm − 2
Original languageEnglish
Article number095106
Number of pages5
JournalJournal of Physics D: Applied Physics
Volume49
Issue number9
DOIs
Publication statusPublished - 1 Feb 2016

Keywords

  • stimulated emission
  • lasing
  • gain
  • threshold
  • photoluminescence

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    Svitsiankou, I. E., Pavlovskii, V. N., Lutsenko, EV., Yablonskii, G. P., Mudryi, A. V., Zhivulko, VD., Yakushev, M. V., & Martin, R. W. (2016). Stimulated emission and lasing in Cu(In,Ga)Se2 thin films. Journal of Physics D: Applied Physics, 49(9), [095106]. https://doi.org/10.1088/0022-3727/49/9/095106