State selection of a bistable SOA ring laser for bit level optical memory applications

Bing C. Wang; Lei Xu; Varghese Baby; Ivan Glesk

doi:10.1109/LPT.2002.1012408

State selection of a bistable SOA ring laser for bit level optical memory applications

Bing C. Wang, Lei Xu, Varghese Baby, Ivan Glesk

Electronic And Electrical Engineering

Research output: Contribution to journal › Article

10 Citations (Scopus)

Abstract

In this letter, we demonstrate the selection between two bistable states of a semiconductor fiber ring laser, using bits from a timeslot channel switched out using a terahertz optical asymmetric demultiplexer. By changing the selected timeslot channel, we were able to change the semiconductor fiber ring laser from a state with a two-peak output at 1570.6 and 1579 nm to a state with one-peak output at 1570.6 nm. This structure has potential application to optical memories.

Original language	English
Pages (from-to)	989-991
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	14
Issue number	7
DOIs	https://doi.org/10.1109/LPT.2002.1012408
Publication status	Published - 1 Jul 2002

Keywords

fibre lasers
optical bistability
optical storage
optical switches
ring lasers
semiconductor optical amplifiers

Access to Document

10.1109/LPT.2002.1012408

Link to publication in Scopus

Fingerprint Dive into the research topics of 'State selection of a bistable SOA ring laser for bit level optical memory applications'. Together they form a unique fingerprint.

Cite this

@article{af68a50fe17945018c0627677a1db4e2,

title = "State selection of a bistable SOA ring laser for bit level optical memory applications",

abstract = "In this letter, we demonstrate the selection between two bistable states of a semiconductor fiber ring laser, using bits from a timeslot channel switched out using a terahertz optical asymmetric demultiplexer. By changing the selected timeslot channel, we were able to change the semiconductor fiber ring laser from a state with a two-peak output at 1570.6 and 1579 nm to a state with one-peak output at 1570.6 nm. This structure has potential application to optical memories.",

keywords = "fibre lasers , optical bistability, optical storage, optical switches, ring lasers , semiconductor optical amplifiers",

author = "Wang, {Bing C.} and Lei Xu and Varghese Baby and Ivan Glesk",

year = "2002",

month = jul,

day = "1",

doi = "10.1109/LPT.2002.1012408",

language = "English",

volume = "14",

pages = "989--991",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

number = "7",

}

TY - JOUR

T1 - State selection of a bistable SOA ring laser for bit level optical memory applications

AU - Wang, Bing C.

AU - Xu, Lei

AU - Baby, Varghese

AU - Glesk, Ivan

PY - 2002/7/1

Y1 - 2002/7/1

N2 - In this letter, we demonstrate the selection between two bistable states of a semiconductor fiber ring laser, using bits from a timeslot channel switched out using a terahertz optical asymmetric demultiplexer. By changing the selected timeslot channel, we were able to change the semiconductor fiber ring laser from a state with a two-peak output at 1570.6 and 1579 nm to a state with one-peak output at 1570.6 nm. This structure has potential application to optical memories.

AB - In this letter, we demonstrate the selection between two bistable states of a semiconductor fiber ring laser, using bits from a timeslot channel switched out using a terahertz optical asymmetric demultiplexer. By changing the selected timeslot channel, we were able to change the semiconductor fiber ring laser from a state with a two-peak output at 1570.6 and 1579 nm to a state with one-peak output at 1570.6 nm. This structure has potential application to optical memories.

KW - fibre lasers

KW - optical bistability

KW - optical storage

KW - optical switches

KW - ring lasers

KW - semiconductor optical amplifiers

UR - http://www.scopus.com/inward/record.url?scp=0036648994&partnerID=8YFLogxK

U2 - 10.1109/LPT.2002.1012408

DO - 10.1109/LPT.2002.1012408

M3 - Article

VL - 14

SP - 989

EP - 991

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

SN - 1041-1135

IS - 7

ER -