Stability of amorphous-silicon TFTs deposited on clear plastic substrates at 250°C to 280°C

K. Long; A. Z. Kattamis; I. C. Cheng; H. Gleskova; Sigurd  Wagner; J. C. Sturm

doi:10.1109/LED.2005.863147

Stability of amorphous-silicon TFTs deposited on clear plastic substrates at 250°C to 280°C

K. Long^*
, A. Z. Kattamis
, I. C. Cheng
, H. Gleskova
, Sigurd Wagner
, J. C. Sturm

^*Corresponding author for this work

Electronic And Electrical Engineering

Research output: Contribution to journal › Article › peer-review

100 Citations (Scopus)

Abstract

Amorphous-silicon (a-Si) thin-film transistors (TFTs) were fabricated on a free-standing new clear plastic substrate with high glass transition temperature (Tg) of >315° C and low coefficient of thermal expansion of <10 ppm/ ° C. Maximum process temperatures on the substrates were 250°C and 280°C, close to the temperatures used in industrial a-Si TFT production on glass substrates. The first TFTs made at 280°C have dc characteristics comparable to TFTs made on glass. The stability of the 250°C TFTs on clear plastic is approaching that of TFTs made on glass at 300°C-350°C. TFT characteristics and stability depend only on process temperature and not on substrate type.

Original language	English
Pages (from-to)	111-113
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	27
Issue number	2
DOIs	https://doi.org/10.1109/LED.2005.863147
Publication status	Published - Feb 2006

Keywords

buffer layer
optical buffering
thin film transistors
optical device fabrication
amorphous-silicon

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10.1109/LED.2005.863147

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title = "Stability of amorphous-silicon TFTs deposited on clear plastic substrates at 250°C to 280°C",

abstract = "Amorphous-silicon (a-Si) thin-film transistors (TFTs) were fabricated on a free-standing new clear plastic substrate with high glass transition temperature (Tg) of >315° C and low coefficient of thermal expansion of <10 ppm/ ° C. Maximum process temperatures on the substrates were 250°C and 280°C, close to the temperatures used in industrial a-Si TFT production on glass substrates. The first TFTs made at 280°C have dc characteristics comparable to TFTs made on glass. The stability of the 250°C TFTs on clear plastic is approaching that of TFTs made on glass at 300°C-350°C. TFT characteristics and stability depend only on process temperature and not on substrate type.",

keywords = "buffer layer, optical buffering, thin film transistors, optical device fabrication, amorphous-silicon ",

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volume = "27",

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T1 - Stability of amorphous-silicon TFTs deposited on clear plastic substrates at 250°C to 280°C

AU - Long, K.

AU - Kattamis, A. Z.

AU - Cheng, I. C.

AU - Gleskova, H.

AU - Wagner, Sigurd

AU - Sturm, J. C.

PY - 2006/2

Y1 - 2006/2

N2 - Amorphous-silicon (a-Si) thin-film transistors (TFTs) were fabricated on a free-standing new clear plastic substrate with high glass transition temperature (Tg) of >315° C and low coefficient of thermal expansion of <10 ppm/ ° C. Maximum process temperatures on the substrates were 250°C and 280°C, close to the temperatures used in industrial a-Si TFT production on glass substrates. The first TFTs made at 280°C have dc characteristics comparable to TFTs made on glass. The stability of the 250°C TFTs on clear plastic is approaching that of TFTs made on glass at 300°C-350°C. TFT characteristics and stability depend only on process temperature and not on substrate type.

AB - Amorphous-silicon (a-Si) thin-film transistors (TFTs) were fabricated on a free-standing new clear plastic substrate with high glass transition temperature (Tg) of >315° C and low coefficient of thermal expansion of <10 ppm/ ° C. Maximum process temperatures on the substrates were 250°C and 280°C, close to the temperatures used in industrial a-Si TFT production on glass substrates. The first TFTs made at 280°C have dc characteristics comparable to TFTs made on glass. The stability of the 250°C TFTs on clear plastic is approaching that of TFTs made on glass at 300°C-350°C. TFT characteristics and stability depend only on process temperature and not on substrate type.

KW - buffer layer

KW - optical buffering

KW - thin film transistors

KW - optical device fabrication

KW - amorphous-silicon

UR - https://www.scopus.com/pages/publications/31544465946

U2 - 10.1109/LED.2005.863147

DO - 10.1109/LED.2005.863147

M3 - Article

VL - 27

SP - 111

EP - 113

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 2

ER -

Stability of amorphous-silicon TFTs deposited on clear plastic substrates at 250°C to 280°C

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Keywords

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