Stability of amorphous-silicon TFTs deposited on clear plastic substrates at 250°C to 280°C

K. Long, A. Z. Kattamis, I. C. Cheng, H. Gleskova, Sigurd Wagner, J. C. Sturm

Research output: Contribution to journalArticle

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Abstract

Amorphous-silicon (a-Si) thin-film transistors (TFTs) were fabricated on a free-standing new clear plastic substrate with high glass transition temperature (Tg) of >315° C and low coefficient of thermal expansion of <10 ppm/ ° C. Maximum process temperatures on the substrates were 250°C and 280°C, close to the temperatures used in industrial a-Si TFT production on glass substrates. The first TFTs made at 280°C have dc characteristics comparable to TFTs made on glass. The stability of the 250°C TFTs on clear plastic is approaching that of TFTs made on glass at 300°C-350°C. TFT characteristics and stability depend only on process temperature and not on substrate type.
LanguageEnglish
Pages111-113
Number of pages3
JournalIEEE Electron Device Letters
Volume27
Issue number2
DOIs
Publication statusPublished - Feb 2006

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Thin film transistors
Amorphous silicon
Plastics
Substrates
Glass
Temperature
Thermal expansion

Keywords

  • buffer layer
  • optical buffering
  • thin film transistors
  • optical device fabrication
  • amorphous-silicon

Cite this

Long, K. ; Kattamis, A. Z. ; Cheng, I. C. ; Gleskova, H. ; Wagner, Sigurd ; Sturm, J. C. / Stability of amorphous-silicon TFTs deposited on clear plastic substrates at 250°C to 280°C. In: IEEE Electron Device Letters. 2006 ; Vol. 27, No. 2. pp. 111-113.
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Stability of amorphous-silicon TFTs deposited on clear plastic substrates at 250°C to 280°C. / Long, K.; Kattamis, A. Z.; Cheng, I. C.; Gleskova, H.; Wagner, Sigurd ; Sturm, J. C.

In: IEEE Electron Device Letters, Vol. 27, No. 2, 02.2006, p. 111-113.

Research output: Contribution to journalArticle

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