Abstract
Amorphous-silicon (a-Si) thin-film transistors (TFTs) were fabricated on a free-standing new clear plastic substrate with high glass transition temperature (Tg) of >315° C and low coefficient of thermal expansion of <10 ppm/ ° C. Maximum process temperatures on the substrates were 250°C and 280°C, close to the temperatures used in industrial a-Si TFT production on glass substrates. The first TFTs made at 280°C have dc characteristics comparable to TFTs made on glass. The stability of the 250°C TFTs on clear plastic is approaching that of TFTs made on glass at 300°C-350°C. TFT characteristics and stability depend only on process temperature and not on substrate type.
Original language | English |
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Pages (from-to) | 111-113 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 27 |
Issue number | 2 |
DOIs | |
Publication status | Published - Feb 2006 |
Keywords
- buffer layer
- optical buffering
- thin film transistors
- optical device fabrication
- amorphous-silicon