Splitting of X-ray diffraction and photoluminescence peaks in InGaN/GaN layers

S. Pereira, M. R. Correia, E. Pereira, K.P. O'Donnell, R.W. Martin, M.E. White, E. Alves, A.D. Sequeira, N. Franco

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

The observation of multiple, X-ray diffraction (XRD) and photoluminescence (PL) peaks in an InGaN epilayer is sometimes regarded as an indicator of phase segregation. In this report, a detailed characterisation of a InGaN/GaN bilayer by a combination of XRD and Rutherford backscattering spectrometry (RBS) shows that splitting of the XRD peak may occur in the absence of phase decomposition. An XRD reciprocal space map performed on the (105) plane shows that one component of the partially resolved InGaN double peak is almost aligned with that of the GaN buffer, indicating that part of the layer is pseudomorphic to the GaN template. From a consideration of the effect of strain on the c- and a-lattice constants, both the partially relaxed and the pseudomorphic components are shown to have the same indium content. The layer composition deduced from XRD measurements is confirmed by RBS. Depth-resolving RBS/channelling angular scans also shows that the region closer to the GaN/InGaN interface is nearly pseudomorphic to the GaN substrate, whereas the surface region is almost fully relaxed. Furthermore, PL spectroscopy shows a double peak that can be accounted for by regions of the sample under different strains.

Original languageEnglish
Pages (from-to)163-167
Number of pages5
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume93
Issue number1-3
DOIs
Publication statusPublished - 30 May 2002

Keywords

  • composition
  • InGaN
  • photoluminescence
  • Rutherford backscattering
  • strain
  • X-ray diffraction

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