Spectroscopy of localised and delocalised excitons in InGaN light emitting diodes

Research output: Contribution to conferencePaper

Abstract

This paper show that light emission arises from the recombination of excitons strongly localized in deep potential wells associated with indium rich regions of the active region. An investigation of these localized excitons using absorption and luminescence spectroscopies applied to InGaN single quantum wells in commercial light emitting diodes is shown to provide important insights into the mechanics of the light emission.

Conference

ConferenceProceedings of the 1998 International Symposium on Information Theory, CLEO/EUROPE'98
CityGlasgow, Scotland
Period14/09/9818/09/98

Fingerprint

Light emission
Excitons
Light emitting diodes
Spectroscopy
Indium
Semiconductor quantum wells
Luminescence
Mechanics

Cite this

Martin, R. W., & O'Donnell, K. P. (1998). Spectroscopy of localised and delocalised excitons in InGaN light emitting diodes. Paper presented at Proceedings of the 1998 International Symposium on Information Theory, CLEO/EUROPE'98, Glasgow, Scotland, .
Martin, R. W. ; O'Donnell, K. P. / Spectroscopy of localised and delocalised excitons in InGaN light emitting diodes. Paper presented at Proceedings of the 1998 International Symposium on Information Theory, CLEO/EUROPE'98, Glasgow, Scotland, .1 p.
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title = "Spectroscopy of localised and delocalised excitons in InGaN light emitting diodes",
abstract = "This paper show that light emission arises from the recombination of excitons strongly localized in deep potential wells associated with indium rich regions of the active region. An investigation of these localized excitons using absorption and luminescence spectroscopies applied to InGaN single quantum wells in commercial light emitting diodes is shown to provide important insights into the mechanics of the light emission.",
author = "Martin, {R. W.} and O'Donnell, {K. P.}",
year = "1998",
month = "1",
day = "1",
language = "English",
note = "Proceedings of the 1998 International Symposium on Information Theory, CLEO/EUROPE'98 ; Conference date: 14-09-1998 Through 18-09-1998",

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Martin, RW & O'Donnell, KP 1998, 'Spectroscopy of localised and delocalised excitons in InGaN light emitting diodes' Paper presented at Proceedings of the 1998 International Symposium on Information Theory, CLEO/EUROPE'98, Glasgow, Scotland, 14/09/98 - 18/09/98, .

Spectroscopy of localised and delocalised excitons in InGaN light emitting diodes. / Martin, R. W.; O'Donnell, K. P.

1998. Paper presented at Proceedings of the 1998 International Symposium on Information Theory, CLEO/EUROPE'98, Glasgow, Scotland, .

Research output: Contribution to conferencePaper

TY - CONF

T1 - Spectroscopy of localised and delocalised excitons in InGaN light emitting diodes

AU - Martin, R. W.

AU - O'Donnell, K. P.

PY - 1998/1/1

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N2 - This paper show that light emission arises from the recombination of excitons strongly localized in deep potential wells associated with indium rich regions of the active region. An investigation of these localized excitons using absorption and luminescence spectroscopies applied to InGaN single quantum wells in commercial light emitting diodes is shown to provide important insights into the mechanics of the light emission.

AB - This paper show that light emission arises from the recombination of excitons strongly localized in deep potential wells associated with indium rich regions of the active region. An investigation of these localized excitons using absorption and luminescence spectroscopies applied to InGaN single quantum wells in commercial light emitting diodes is shown to provide important insights into the mechanics of the light emission.

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M3 - Paper

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Martin RW, O'Donnell KP. Spectroscopy of localised and delocalised excitons in InGaN light emitting diodes. 1998. Paper presented at Proceedings of the 1998 International Symposium on Information Theory, CLEO/EUROPE'98, Glasgow, Scotland, .