This paper show that light emission arises from the recombination of excitons strongly localized in deep potential wells associated with indium rich regions of the active region. An investigation of these localized excitons using absorption and luminescence spectroscopies applied to InGaN single quantum wells in commercial light emitting diodes is shown to provide important insights into the mechanics of the light emission.
|Number of pages||1|
|Publication status||Published - 1 Jan 1998|
|Event||Proceedings of the 1998 International Symposium on Information Theory, CLEO/EUROPE'98 - Glasgow, Scotland|
Duration: 14 Sep 1998 → 18 Sep 1998
|Conference||Proceedings of the 1998 International Symposium on Information Theory, CLEO/EUROPE'98|
|Period||14/09/98 → 18/09/98|