Spectroscopy of localised and delocalised excitons in InGaN light emitting diodes

Research output: Contribution to conferencePaper

Abstract

This paper show that light emission arises from the recombination of excitons strongly localized in deep potential wells associated with indium rich regions of the active region. An investigation of these localized excitons using absorption and luminescence spectroscopies applied to InGaN single quantum wells in commercial light emitting diodes is shown to provide important insights into the mechanics of the light emission.

Original languageEnglish
Number of pages1
Publication statusPublished - 1 Jan 1998
EventProceedings of the 1998 International Symposium on Information Theory, CLEO/EUROPE'98 - Glasgow, Scotland
Duration: 14 Sep 199818 Sep 1998

Conference

ConferenceProceedings of the 1998 International Symposium on Information Theory, CLEO/EUROPE'98
CityGlasgow, Scotland
Period14/09/9818/09/98

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