Spectroscopic characterization of 1.5um GaInN(Sb)As/GaNAs quantum-well structures by molecular-beam epitaxy

H.D. Sun; S. Calvez; M.D. Dawson; J.A. Gupta; G.I. Sproule; X. Wu; Z.R. Wasilewski

Spectroscopic characterization of 1.5um GaInN(Sb)As/GaNAs quantum-well structures by molecular-beam epitaxy

H.D. Sun, S. Calvez, M.D. Dawson, J.A. Gupta, G.I. Sproule, X. Wu, Z.R. Wasilewski

Research output: Contribution to conference › Presentation/Speech › peer-review

Abstract

Oral presentation on spectroscopic characterization of 1.5um GaInN(Sb)As/GaNAs quantum-well structures by molecular-beam epitaxy.

Original language	English
Publication status	Published - 2006
Event	International Conference on the Physics of Semiconductor 2006 - Vienna, Austria Duration: 1 Jul 2006 → …

Conference

Conference	International Conference on the Physics of Semiconductor 2006
City	Vienna, Austria
Period	1/07/06 → …

Keywords

optoelectronics
optical lasers
optics
photonics

Cite this

@conference{aefd5dfdd0744293858311db799f9613,

title = "Spectroscopic characterization of 1.5um GaInN(Sb)As/GaNAs quantum-well structures by molecular-beam epitaxy",

abstract = "Oral presentation on spectroscopic characterization of 1.5um GaInN(Sb)As/GaNAs quantum-well structures by molecular-beam epitaxy.",

keywords = "optoelectronics, optical lasers, optics, photonics",

author = "H.D. Sun and S. Calvez and M.D. Dawson and J.A. Gupta and G.I. Sproule and X. Wu and Z.R. Wasilewski",

year = "2006",

language = "English",

note = "International Conference on the Physics of Semiconductor 2006 ; Conference date: 01-07-2006",

}

TY - CONF

T1 - Spectroscopic characterization of 1.5um GaInN(Sb)As/GaNAs quantum-well structures by molecular-beam epitaxy

AU - Sun, H.D.

AU - Calvez, S.

AU - Dawson, M.D.

AU - Gupta, J.A.

AU - Sproule, G.I.

AU - Wu, X.

AU - Wasilewski, Z.R.

PY - 2006

Y1 - 2006

N2 - Oral presentation on spectroscopic characterization of 1.5um GaInN(Sb)As/GaNAs quantum-well structures by molecular-beam epitaxy.

AB - Oral presentation on spectroscopic characterization of 1.5um GaInN(Sb)As/GaNAs quantum-well structures by molecular-beam epitaxy.

KW - optoelectronics

KW - optical lasers

KW - optics

KW - photonics

UR - http://www.icps2006.at/

M3 - Presentation/Speech

T2 - International Conference on the Physics of Semiconductor 2006

Y2 - 1 July 2006

ER -

Spectroscopic characterization of 1.5um GaInN(Sb)As/GaNAs quantum-well structures by molecular-beam epitaxy

Abstract

Conference

Keywords

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