Spectroscopic characterization of 1.5um GaInN(Sb)As/GaNAs quantum-well structures by molecular-beam epitaxy

H.D. Sun, S. Calvez, M.D. Dawson, J.A. Gupta, G.I. Sproule, X. Wu, Z.R. Wasilewski

Research output: Contribution to conferenceSpeech

Abstract

Oral presentation on spectroscopic characterization of 1.5um GaInN(Sb)As/GaNAs quantum-well structures by molecular-beam epitaxy.
Original languageEnglish
Publication statusPublished - 2006
EventInternational Conference on the Physics of Semiconductor 2006 - Vienna, Austria
Duration: 1 Jul 2006 → …

Conference

ConferenceInternational Conference on the Physics of Semiconductor 2006
CityVienna, Austria
Period1/07/06 → …

Fingerprint

Molecular beam epitaxy
Semiconductor quantum wells

Keywords

  • optoelectronics
  • optical lasers
  • optics
  • photonics

Cite this

Sun, H. D., Calvez, S., Dawson, M. D., Gupta, J. A., Sproule, G. I., Wu, X., & Wasilewski, Z. R. (2006). Spectroscopic characterization of 1.5um GaInN(Sb)As/GaNAs quantum-well structures by molecular-beam epitaxy. International Conference on the Physics of Semiconductor 2006, Vienna, Austria, .
Sun, H.D. ; Calvez, S. ; Dawson, M.D. ; Gupta, J.A. ; Sproule, G.I. ; Wu, X. ; Wasilewski, Z.R. / Spectroscopic characterization of 1.5um GaInN(Sb)As/GaNAs quantum-well structures by molecular-beam epitaxy. International Conference on the Physics of Semiconductor 2006, Vienna, Austria, .
@conference{aefd5dfdd0744293858311db799f9613,
title = "Spectroscopic characterization of 1.5um GaInN(Sb)As/GaNAs quantum-well structures by molecular-beam epitaxy",
abstract = "Oral presentation on spectroscopic characterization of 1.5um GaInN(Sb)As/GaNAs quantum-well structures by molecular-beam epitaxy.",
keywords = "optoelectronics, optical lasers, optics, photonics",
author = "H.D. Sun and S. Calvez and M.D. Dawson and J.A. Gupta and G.I. Sproule and X. Wu and Z.R. Wasilewski",
year = "2006",
language = "English",
note = "International Conference on the Physics of Semiconductor 2006 ; Conference date: 01-07-2006",

}

Sun, HD, Calvez, S, Dawson, MD, Gupta, JA, Sproule, GI, Wu, X & Wasilewski, ZR 2006, 'Spectroscopic characterization of 1.5um GaInN(Sb)As/GaNAs quantum-well structures by molecular-beam epitaxy' International Conference on the Physics of Semiconductor 2006, Vienna, Austria, 1/07/06, .

Spectroscopic characterization of 1.5um GaInN(Sb)As/GaNAs quantum-well structures by molecular-beam epitaxy. / Sun, H.D.; Calvez, S.; Dawson, M.D.; Gupta, J.A.; Sproule, G.I.; Wu, X.; Wasilewski, Z.R.

2006. International Conference on the Physics of Semiconductor 2006, Vienna, Austria, .

Research output: Contribution to conferenceSpeech

TY - CONF

T1 - Spectroscopic characterization of 1.5um GaInN(Sb)As/GaNAs quantum-well structures by molecular-beam epitaxy

AU - Sun, H.D.

AU - Calvez, S.

AU - Dawson, M.D.

AU - Gupta, J.A.

AU - Sproule, G.I.

AU - Wu, X.

AU - Wasilewski, Z.R.

PY - 2006

Y1 - 2006

N2 - Oral presentation on spectroscopic characterization of 1.5um GaInN(Sb)As/GaNAs quantum-well structures by molecular-beam epitaxy.

AB - Oral presentation on spectroscopic characterization of 1.5um GaInN(Sb)As/GaNAs quantum-well structures by molecular-beam epitaxy.

KW - optoelectronics

KW - optical lasers

KW - optics

KW - photonics

UR - http://www.icps2006.at/

M3 - Speech

ER -

Sun HD, Calvez S, Dawson MD, Gupta JA, Sproule GI, Wu X et al. Spectroscopic characterization of 1.5um GaInN(Sb)As/GaNAs quantum-well structures by molecular-beam epitaxy. 2006. International Conference on the Physics of Semiconductor 2006, Vienna, Austria, .