Spectroscopic characterization of 1.3 mu m GalnNAs quantum-well structures grown by metal-organic vapor phase epitaxy

H D Sun, A H Clark, S Calvez, M D Dawson, Y N Qiu, J M Rorison, K S Kim, T Kim, Y J Park

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Abstract

We report optical studies of high-quality 1.3 mu m strain-compensated GaInNAs/GaAs single-quantum-well structures grown by metalorganic vapor phase epitaxy. Photoluminescence excitation (PLE) spectroscopy shows clearly the electronic structure of the two-dimensional quantum well. The transition energies between quantized states of the electrons and holes are in agreement with theoretical calculations based on the band anti-crossing model in which the localized N states interact with the extended states in the conduction band. We also investigated the polarization properties of the luminescence by polarized edge-emission measurements. Luminescence bands with different polarization characters arising from the electron to heavy-hole and light-hole transitions, respectively, have been identified and verify the transition assignment observed in the PLE spectrum. (C) 2005 American Institute of Physics.

Original languageEnglish
Article number092106
Pages (from-to)-
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number9
DOIs
Publication statusPublished - 28 Feb 2005

Keywords

  • GaInNAs devices
  • low nitrogen-content
  • laser-diodes
  • conduction band
  • alloys
  • nonparabolicity

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