Spectroscopic characterization of 1.3µm GaInNAs quantum-well structures grown by metal-organic vapor phase epitaxy

H.D. Sun, A.H. Clark, S. Calvez, M.D. Dawson, Y.N. Qiu, J.M. Rorison, K.S. Kim, T. Kim, Y.J. Park

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Abstract

We report optical studies of high-quality 1.3 μm strain-compensated GaInNAs/GaAs single-quantum-well structures grown by metalorganic vapor phase epitaxy. Photoluminescence excitation (PLE) spectroscopy shows clearly the electronic structure of the two-dimensional quantum well. The transition energies between quantized states of the electrons and holes are in agreement with theoretical calculations based on the band anti-crossing model in which the localized N states interact with the extended states in the conduction band. We also investigated the polarization properties of the luminescence by polarized edge-emission measurements. Luminescence bands with different polarization characters arising from the electron to heavy-hole and light-hole transitions, respectively, have been identified and verify the transition assignment observed in the PLE spectrum.
Original languageEnglish
Article number092106
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Early online date23 Feb 2005
DOIs
Publication statusPublished - 2005

Keywords

  • spectroscopy
  • gaInNAs

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