Spectroscopic characterization of 1.3µm GaInNAs quantum-well structures grown by metal-organic vapor phase epitaxy

H.D. Sun, A.H. Clark, S. Calvez, M.D. Dawson, Y.N. Qiu, J.M. Rorison, K.S. Kim, T. Kim, Y.J. Park

Research output: Contribution to journalArticle

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Abstract

We report optical studies of high-quality 1.3 μm strain-compensated GaInNAs/GaAs single-quantum-well structures grown by metalorganic vapor phase epitaxy. Photoluminescence excitation (PLE) spectroscopy shows clearly the electronic structure of the two-dimensional quantum well. The transition energies between quantized states of the electrons and holes are in agreement with theoretical calculations based on the band anti-crossing model in which the localized N states interact with the extended states in the conduction band. We also investigated the polarization properties of the luminescence by polarized edge-emission measurements. Luminescence bands with different polarization characters arising from the electron to heavy-hole and light-hole transitions, respectively, have been identified and verify the transition assignment observed in the PLE spectrum.
LanguageEnglish
Article number092106
Pages1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Early online date23 Feb 2005
DOIs
Publication statusPublished - 2005

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vapor phase epitaxy
quantum wells
metals
luminescence
photoluminescence
polarization
excitation
conduction bands
electrons
electronic structure
spectroscopy
energy

Keywords

  • spectroscopy
  • gaInNAs

Cite this

Sun, H.D. ; Clark, A.H. ; Calvez, S. ; Dawson, M.D. ; Qiu, Y.N. ; Rorison, J.M. ; Kim, K.S. ; Kim, T. ; Park, Y.J. / Spectroscopic characterization of 1.3µm GaInNAs quantum-well structures grown by metal-organic vapor phase epitaxy. In: Applied Physics Letters. 2005 ; Vol. 86. pp. 1-3.
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abstract = "We report optical studies of high-quality 1.3 μm strain-compensated GaInNAs/GaAs single-quantum-well structures grown by metalorganic vapor phase epitaxy. Photoluminescence excitation (PLE) spectroscopy shows clearly the electronic structure of the two-dimensional quantum well. The transition energies between quantized states of the electrons and holes are in agreement with theoretical calculations based on the band anti-crossing model in which the localized N states interact with the extended states in the conduction band. We also investigated the polarization properties of the luminescence by polarized edge-emission measurements. Luminescence bands with different polarization characters arising from the electron to heavy-hole and light-hole transitions, respectively, have been identified and verify the transition assignment observed in the PLE spectrum.",
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Spectroscopic characterization of 1.3µm GaInNAs quantum-well structures grown by metal-organic vapor phase epitaxy. / Sun, H.D.; Clark, A.H.; Calvez, S.; Dawson, M.D.; Qiu, Y.N.; Rorison, J.M.; Kim, K.S.; Kim, T.; Park, Y.J.

In: Applied Physics Letters, Vol. 86, 092106, 2005, p. 1-3.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Spectroscopic characterization of 1.3µm GaInNAs quantum-well structures grown by metal-organic vapor phase epitaxy

AU - Sun, H.D.

AU - Clark, A.H.

AU - Calvez, S.

AU - Dawson, M.D.

AU - Qiu, Y.N.

AU - Rorison, J.M.

AU - Kim, K.S.

AU - Kim, T.

AU - Park, Y.J.

PY - 2005

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N2 - We report optical studies of high-quality 1.3 μm strain-compensated GaInNAs/GaAs single-quantum-well structures grown by metalorganic vapor phase epitaxy. Photoluminescence excitation (PLE) spectroscopy shows clearly the electronic structure of the two-dimensional quantum well. The transition energies between quantized states of the electrons and holes are in agreement with theoretical calculations based on the band anti-crossing model in which the localized N states interact with the extended states in the conduction band. We also investigated the polarization properties of the luminescence by polarized edge-emission measurements. Luminescence bands with different polarization characters arising from the electron to heavy-hole and light-hole transitions, respectively, have been identified and verify the transition assignment observed in the PLE spectrum.

AB - We report optical studies of high-quality 1.3 μm strain-compensated GaInNAs/GaAs single-quantum-well structures grown by metalorganic vapor phase epitaxy. Photoluminescence excitation (PLE) spectroscopy shows clearly the electronic structure of the two-dimensional quantum well. The transition energies between quantized states of the electrons and holes are in agreement with theoretical calculations based on the band anti-crossing model in which the localized N states interact with the extended states in the conduction band. We also investigated the polarization properties of the luminescence by polarized edge-emission measurements. Luminescence bands with different polarization characters arising from the electron to heavy-hole and light-hole transitions, respectively, have been identified and verify the transition assignment observed in the PLE spectrum.

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KW - gaInNAs

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JO - Applied Physics Letters

T2 - Applied Physics Letters

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